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公开(公告)号：US5789762A
公开(公告)日：1998-08-04
申请号：US526935
申请日：1995-09-12
申请人： Jun Koyama , Yasuhiko Takemura , Masahiko Hayakawa , Shunpei Yamazaki , Akiharu Miyanaga , Hisashi Ohtani
发明人： Jun Koyama , Yasuhiko Takemura , Masahiko Hayakawa , Shunpei Yamazaki , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L31/036 , H01L29/04
CPC分类号： H01L27/1214
摘要： It is intended to provide a semiconductor circuit including thin-film transistors (TFTs) having a small leak current and TFTs capable of operating at high speed, and a method for manufacturing such a circuit. A material containing a catalyst element is selectively formed so as to be in close contact with an amorphous silicon film, or a catalyst element is selectively introduced into an amorphous silicon film. The amorphous silicon film thus processed is crystallized by illumination with laser light or strong light equivalent to it. A crystalline silicon area with a small amount of catalyst element is used for TFTs in a pixel circuit and a crystalline silicon area with a large amount of catalyst element is used for TFTs in peripheral circuits of an active matrix circuit.
摘要翻译： 旨在提供一种具有漏电流小的薄膜晶体管（TFT）和能够高速工作的TFT的半导体电路及其制造方法。 选择性地形成含有催化剂元素的材料以与非晶硅膜紧密接触，或者将催化剂元素选择性地引入到非晶硅膜中。 这样处理的非晶硅膜通过照射激光或相当于其的强光而结晶。 具有少量催化剂元素的晶体硅区域用于像素电路中的TFT，并且具有大量催化剂元素的晶体硅区域用于有源矩阵电路的外围电路中的TFT。
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公开(公告)号：US5851862A
公开(公告)日：1998-12-22
申请号：US839940
申请日：1997-04-18
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/324
CPC分类号： H01L21/2026 , H01L27/1214
摘要： A film having a high thermal conductivity material such as aluminum nitride is formed on a substrate, and then a silicon film is formed. When a laser light or an intense light corresponding to the laser light is irradiated to the silicon film, since the aluminum nitride film absorbs heat, a portion of the silicon film near the aluminum nitride film is solidified immediately. However, since a solidifying speed is slow in another portion of the silicon film, crystallization progresses from the portion near the aluminum nitride film. When a substrate temperature is 400.degree. C. or higher at laser irradiation, since a solidifying speed is decreased, a crystallinity of the silicon film is increased. Also, when the substrate is thin, the crystallinity of the silicon film is increased.
摘要翻译： 在基板上形成具有高导热性的材料如氮化铝的膜，然后形成硅膜。 当激光或与激光对应的强光照射到硅膜时，由于氮化铝膜吸收热量，所以在氮化铝膜附近的一部分硅膜立即固化。 然而，由于硅膜的另一部分的固化速度慢，所以结晶从氮化铝膜附近的部分进行。 当激光照射下的基板温度为400℃以上时，由于凝固速度降低，因此硅膜的结晶性提高。 此外，当基板薄时，硅膜的结晶度增加。
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公开(公告)号：US6133583A
公开(公告)日：2000-10-17
申请号：US176898
申请日：1998-10-22
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/324
CPC分类号： H01L21/2026 , H01L27/1214
摘要： A film having a high thermal conductivity material such as aluminum nitride is formed on a substrate, and then a silicon film is formed. When a laser light or an intense light corresponding to the laser light is irradiated to the silicon film, since the aluminum nitride film absorbs heat, a portion of the silicon film near the aluminum nitride film is solidified immediately. However, since a solidifying speed is slow in another portion of the silicon film, crystallization progresses from the portion near the aluminum nitride film. When a substrate temperature is 400.degree. C. or higher at laser irradiation, since a solidifying speed is decreased, a crystallinity of the silicon film is increased. Also, when the substrate is thin, the crystallinity of the silicon film is increased.
摘要翻译： 在基板上形成具有高导热性的材料如氮化铝的膜，然后形成硅膜。 当激光或与激光对应的强光照射到硅膜时，由于氮化铝膜吸收热量，所以在氮化铝膜附近的一部分硅膜立即固化。 然而，由于硅膜的另一部分的固化速度慢，所以结晶从氮化铝膜附近的部分进行。 当激光照射下的基板温度为400℃以上时，由于凝固速度降低，因此硅膜的结晶性提高。 此外，当基板薄时，硅膜的结晶度增加。
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公开(公告)号：US06700133B1
公开(公告)日：2004-03-02
申请号：US09664352
申请日：2000-09-18
IPC分类号： H01L2976
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/1214 , H01L27/1285
摘要： A film having a high thermal conductivity material such as aluminum nitride is formed on a substrate, and then a silicon film is formed. When a laser light or an intense light corresponding to the laser light is irradiated to the silicon film, since the aluminum nitride film absorbs heat, a portion of the silicon film near the aluminum nitride film is solidified immediately. However, since a solidifying speed is slow in another portion of the silicon film, crystallization progresses from the portion near the aluminum nitride film. When a substrate temperature is 400° C. or higher at laser irradiation, since a solidifying speed is decreased, a crystallinity of the silicon film is increased. Also, when the substrate is thin, the crystallinity of the silicon film is increased.
摘要翻译： 在基板上形成具有高导热性的材料如氮化铝的膜，然后形成硅膜。 当激光或与激光对应的强光照射到硅膜时，由于氮化铝膜吸收热量，所以在氮化铝膜附近的一部分硅膜立即固化。 然而，由于硅膜的另一部分的固化速度慢，所以结晶从氮化铝膜附近的部分进行。 当激光照射下的基板温度为400℃以上时，由于凝固速度降低，因此硅膜的结晶性提高。 此外，当基板薄时，硅膜的结晶度增加。
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公开(公告)号：US06452211B1
公开(公告)日：2002-09-17
申请号：US09095027
申请日：1998-06-09
IPC分类号： H01L2904
CPC分类号： H01L29/045 , G02F1/13454 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78675 , H01L29/78678 , Y10S148/122
摘要： A semiconductor thin film having extremely superior crystallinity and a semiconductor device using the semiconductor thin film having high performance are provided. The semiconductor thin film is manufactured in such a manner that after an amorphous semiconductor thin film is crystallized by using a catalytic element, a heat treatment is carried out in an atmosphere containing a halogen element to remove the catalytic element. The thus obtained crystalline semiconductor thin film has substantially {110} orientation. The concentration of C, N, and S remaining in the final semiconductor thin film is less than 5×1018 atoms/cm3, and the concentration of O is less than 1.5×1019 atoms/cm3.
摘要翻译： 提供了具有非常优异的结晶度的半导体薄膜和使用具有高性能的半导体薄膜的半导体器件。 制造半导体薄膜，使得在通过使用催化剂元素使无定形半导体薄膜结晶之后，在含有卤素元素的气氛中进行热处理以除去催化元素。 由此获得的晶体半导体薄膜基本上具有{110}取向。 残留在最终半导体薄膜中的C，N和S的浓度小于5×1018原子/ cm3，O的浓度小于1.5×1019原子/ cm3。
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公开(公告)号：US06693300B2
公开(公告)日：2004-02-17
申请号：US10227407
申请日：2002-08-26
IPC分类号： H01L2976
CPC分类号： H01L29/045 , G02F1/13454 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78675 , H01L29/78678 , Y10S148/122
摘要： A semiconductor thin film having extremely superior crystallinity and a semiconductor device using the semiconductor thin film having high performance are provided. The semiconductor thin film is manufactured in such a manner that after an amorphous semiconductor thin film is crystallized by using a catalytic element, a heat treatment is carried out in an atmosphere containing a halogen element to remove the catalytic element. The thus obtained crystalline semiconductor thin film has substantially {110} orientation. The concentration of C, N, and S remaining in the final semiconductor thin film is less than 5×1018 atoms/cm3, and the concentration of O is less than 1.5×1019 atoms/cm3.
摘要翻译： 提供了具有非常优异的结晶度的半导体薄膜和使用具有高性能的半导体薄膜的半导体器件。 制造半导体薄膜，使得在通过使用催化剂元素使无定形半导体薄膜结晶之后，在含有卤素元素的气氛中进行热处理以除去催化元素。 由此获得的晶体半导体薄膜基本上具有{110}取向。 残留在最终半导体薄膜中的C，N和S的浓度小于5×10 18原子/ cm 3，O的浓度小于1.5×10 19原子/ cm 3。
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公开(公告)号：US06307214B1
公开(公告)日：2001-10-23
申请号：US09084738
申请日：1998-05-27
IPC分类号： H01L2904
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/02672 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78675 , Y10S438/973
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film has features that it exhibits {110} orientation and that almost all crystal lattices have continuity at a crystal boundary. This type of grain boundaries greatly contribute to improving the carrier mobility, and make it possible to realize semiconductor devices having very high performance.
摘要翻译： 在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。 所得到的晶体半导体薄膜具有其显示{110}取向的特征，并且几乎所有晶格在晶体边界处具有连续性。 这种晶界极大地有助于提高载流子迁移率，并且可以实现具有非常高性能的半导体器件。
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公开(公告)号：US06624051B1
公开(公告)日：2003-09-23
申请号：US09645329
申请日：2000-08-25
IPC分类号： H01L2136
CPC分类号： H01L21/02672 , H01L21/02609 , H01L21/02675 , H01L21/2022 , H01L27/1214 , H01L27/1222 , H01L27/1277 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678 , H01L29/78684 , Y10S438/958
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film has features that it exhibits {111} orientation and that almost all crystal lattices have continuity at a crystal boundary. This type of grain boundaries greatly contribute to improving the carrier mobility, and make it possible to realize, semiconductor devices having very high performance.
摘要翻译： 在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。 所得到的晶体半导体薄膜具有其显示{111}取向的特征，并且几乎所有晶格在晶体边界处具有连续性。 这种晶界极大地有助于提高载流子迁移率，并且可以实现具有非常高性能的半导体器件。
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9.发明授权Semiconductor active region of TFTs having radial crystal grains through the whole area of the region 失效通过该区域的整个区域具有径向晶粒的TFT的半导体有源区公开(公告)号：US07679087B2
公开(公告)日：2010-03-16
申请号：US10214691
申请日：2002-08-09
申请人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame , Hisashi Ohtani , Toshiji Hamatani
发明人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame , Hisashi Ohtani , Toshiji Hamatani
IPC分类号： H01L29/04 , H01L31/0392
CPC分类号： H01L21/02672 , H01L21/02686 , H01L21/2022 , H01L21/28158 , H01L21/3221 , H01L21/3226 , H01L27/1203 , H01L27/1229 , H01L27/1277 , H01L27/1296 , H01L29/04 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78675
摘要： There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carried out in an oxidizing ambient containing a halogen element to form a thermal oxide film. At this time, the crystallinity is improved. Also, gettering of the nickel element proceeds. This crystalline silicon film consists of crystals grown radially from a number of points. Consequently, the thin-film transistor having excellent characteristics can be obtained.
摘要翻译： 公开了一种制造具有优异特性的薄膜晶体管的方法。 镍元素与非晶硅膜的选定区域保持接触。 然后，进行热处理以使非晶膜结晶。 随后，在包含卤素元素的氧化环境中进行热处理以形成热氧化膜。 此时，结晶度提高。 此外，镍元素的吸收进行。 该晶体硅膜由从多个点径向生长的晶体组成。 因此，可以获得具有优异特性的薄膜晶体管。
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公开(公告)号：US06528820B1
公开(公告)日：2003-03-04
申请号：US08785486
申请日：1997-01-17
申请人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame , Hisashi Ohtani , Toshiji Hamatani
发明人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame , Hisashi Ohtani , Toshiji Hamatani
IPC分类号： H01L2900
CPC分类号： H01L21/02672 , H01L21/02686 , H01L21/2022 , H01L21/28158 , H01L21/3221 , H01L21/3226 , H01L27/1203 , H01L27/1229 , H01L27/1277 , H01L27/1296 , H01L29/04 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78675
摘要： There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carried out in an oxidizing ambient containing a halogen element to form a thermal oxide film. At this time, the crystallinity is improved. Also, gettering of the nickel element proceeds. This crystalline silicon film consists of crystals grown radially from a number of points. Consequently, the thin-film transistor having excellent characteristics can be obtained.
摘要翻译： 公开了一种制造具有优异特性的薄膜晶体管的方法。 镍元素与非晶硅膜的选定区域保持接触。 然后，进行热处理以使非晶膜结晶。 随后，在包含卤素元素的氧化环境中进行热处理以形成热氧化膜。 此时，结晶度提高。 此外，镍元素的吸收进行。 该晶体硅膜由从多个点径向生长的晶体组成。 因此，可以获得具有优异特性的薄膜晶体管。
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