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    IGBT with a built-in-diode
    5.
    发明授权
    IGBT with a built-in-diode 有权
    IGBT内置二极管

    公开(公告)号：US09412737B2

    公开(公告)日：2016-08-09

    申请号：US14888291

    申请日：2013-05-23

    申请人： Jun Saito ,  Satoru Machida ,  Yusuke Yamashita

    发明人： Jun Saito ,  Satoru Machida ,  Yusuke Yamashita

    IPC分类号： H01L29/732 ,  H01L27/07 ,  H01L29/739 ,  H01L29/872 ,  H01L29/06 ,  H01L29/36 ,  H01L29/423

    CPC分类号： H01L27/0716 ,  H01L27/0727 ,  H01L27/0766 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/7397 ,  H01L29/872

    摘要： When an IGBT has a barrier layer 10 that separates an upper body region 8a from a lower body region 8b, conductivity modulation is enhanced and on-resistance decreases. When the IGBT also has a Schottky contact region 6 that extends to reach the barrier layer 10, a diode structure can be obtained. In this case, however, a saturation current increases as well as short circuit resistance decreases. The Schottky contact region 6 is separated from the emitter region 4 by the upper body region 8a. By selecting an impurity concentration in the region 8a, an increase in a saturation current can be avoided. Alternatively, a block structure that prevents a depletion layer extending from the region 6 into the region 8a from joining a depletion layer extending from the region 4 into the region 8a may be provided in an area separating the region 6 from the region 4.

    摘要翻译： 当IGBT具有将上部区域8a与下部主体区域8b分隔开的阻挡层10时，电导率调制增强，导通电阻降低。 当IGBT也具有延伸到达阻挡层10的肖特基接触区域6时，可以获得二极管结构。 然而，在这种情况下，饱和电流增加以及短路电阻降低。 肖特基接触区域6通过上体区域8a与发射极区域4分离。 通过选择区域8a中的杂质浓度，可以避免饱和电流的增加。 或者，可以在将区域6与区域4分离的区域中设置防止从区域6延伸到区域8a中的耗尽层与从区域4延伸到区域8a的耗尽层连接的块结构。

    Reverse conducting IGBT
    6.
    发明授权
    Reverse conducting IGBT 有权
    反向导通IGBT

    公开(公告)号：US09099521B2

    公开(公告)日：2015-08-04

    申请号：US14182923

    申请日：2014-02-18

    申请人： Yusuke Yamashita ,  Satoru Machida ,  Jun Saito

    发明人： Yusuke Yamashita ,  Satoru Machida ,  Jun Saito

    IPC分类号： H01L29/739 ,  H01L29/861 ,  H01L29/08 ,  H01L29/10

    CPC分类号： H01L29/7395 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/7397 ,  H01L29/8611

    摘要： A reverse conducting IGBT that includes an insulated gate; a semiconductor layer having a first conductivity type drift region, a second conductivity type body region, a first conductivity type emitter region, and a second conductivity type intermediate region; and an emitter electrode provided on a surface of the semiconductor layer. The first conductivity type drift region of the semiconductor layer contacts the insulated gate. The second conductivity type body region of the semiconductor layer is provided on the drift region and contacts the insulated gate. The first conductivity type emitter region of the semiconductor layer is provided on the body region and contacts the insulated gate. The second conductivity type intermediate region of the semiconductor layer is provided on the emitter region and is interposed between the emitter region and the emitter electrode.

    摘要翻译： 包括绝缘栅极的反向导通IGBT; 具有第一导电类型漂移区域，第二导电类型体区域，第一导电类型发射极区域和第二导电类型中间区域的半导体层; 以及设置在半导体层的表面上的发射电极。 半导体层的第一导电型漂移区域与绝缘栅极接触。 半导体层的第二导电类型体区设置在漂移区上并与绝缘栅接触。 半导体层的第一导电型发射极区域设置在主体区域上并与绝缘栅极接触。 半导体层的第二导电类型中间区域设置在发射极区域上并且插入在发射极区域和发射极电极之间。

    Insulated-gate bipolar transistor
    8.
    发明授权
    Insulated-gate bipolar transistor 有权
    绝缘栅双极晶体管

    公开(公告)号：US09425271B2

    公开(公告)日：2016-08-23

    申请号：US14002752

    申请日：2012-03-07

    申请人： Jun Saito ,  Satoru Machida

    发明人： Jun Saito ,  Satoru Machida

    IPC分类号： H01L29/423 ,  H01L29/739 ,  H01L29/10 ,  H01L29/06 ,  H01L29/08

    CPC分类号： H01L29/423 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/4238 ,  H01L29/7395 ,  H01L29/7397

    摘要： In an IGBT, a trench extending in a bent shape to have a corner is formed in an upper surface of a semiconductor substrate. The inside of the trench is covered with an insulating film. A gate is placed inside the trench. An emitter and a collector are formed on an upper surface and a lower surface of the semiconductor substrate, respectively. An emitter region, a body region, a drift region, and a collector region are formed in the semiconductor substrate. The emitter region is formed of an n-type semiconductor, is in contact with the insulating film, and is in ohmic contact with the emitter electrode. The body region is formed of a p-type semiconductor, is in contact with the insulating film below the emitter region, is in contact with the insulating film of an inner corner portion of the trench, and is in ohmic contact with the emitter electrode.

    摘要翻译： 在IGBT中，在半导体基板的上表面形成有以弯曲形状延伸成具有角部的沟槽。 沟槽的内部覆盖有绝缘膜。 一个门被放置在沟槽内。 分别在半导体衬底的上表面和下表面上形成发射极和集电极。 在半导体衬底中形成发射极区域，体区域，漂移区域和集电极区域。 发射极区由n型半导体形成，与绝缘膜接触，与发射电极欧姆接触。 体区域由p型半导体形成，与发射极区域下方的绝缘膜接触，与沟槽的内角部分的绝缘膜接触，并与发射极电极欧姆接触。

    INSULATED-GATE BIPOLAR TRANSISTOR
    9.
    发明申请
    INSULATED-GATE BIPOLAR TRANSISTOR 有权
    绝缘栅双极晶体管

    公开(公告)号：US20140054645A1

    公开(公告)日：2014-02-27

    申请号：US14002752

    申请日：2012-03-07

    申请人： Jun Saito ,  Satoru Machida

    发明人： Jun Saito ,  Satoru Machida

    IPC分类号： H01L29/423 ,  H01L29/739

    CPC分类号： H01L29/423 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/4238 ,  H01L29/7395 ,  H01L29/7397

    摘要： In an IGBT, a trench extending in a bent shape to have a corner is formed in an upper surface of a semiconductor substrate. The inside of the trench is covered with an insulating film. A gate is placed inside the trench. An emitter and a collector are formed on an upper surface and a lower surface of the semiconductor substrate, respectively. An emitter region, a body region, a drift region, and a collector region are formed in the semiconductor substrate. The emitter region is formed of an n-type semiconductor, is in contact with the insulating film, and is in ohmic contact with the emitter electrode. The body region is formed of a p-type semiconductor, is in contact with the insulating film below the emitter region, is in contact with the insulating film of an inner corner portion of the trench, and is in ohmic contact with the emitter electrode.

    摘要翻译： 在IGBT中，在半导体基板的上表面形成有以弯曲形状延伸成具有角部的沟槽。 沟槽的内部覆盖有绝缘膜。 一个门被放置在沟槽内。 分别在半导体衬底的上表面和下表面上形成发射极和集电极。 在半导体衬底中形成发射极区域，体区域，漂移区域和集电极区域。 发射极区由n型半导体形成，与绝缘膜接触，与发射电极欧姆接触。 体区域由p型半导体形成，与发射极区域下方的绝缘膜接触，与沟槽的内角部分的绝缘膜接触，并与发射极电极欧姆接触。

    IGBT AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    IGBT AND METHOD OF MANUFACTURING THE SAME 有权
    IGBT及其制造方法

    公开(公告)号：US20140231866A1

    公开(公告)日：2014-08-21

    申请号：US14347897

    申请日：2011-09-28

    申请人： Masaru Senoo ,  Kyosuke Miyagi ,  Tsuyoshi Nishiwaki ,  Jun Saito

    发明人： Masaru Senoo ,  Kyosuke Miyagi ,  Tsuyoshi Nishiwaki ,  Jun Saito

    IPC分类号： H01L29/739 ,  H01L29/66

    CPC分类号： H01L29/66348 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/6634 ,  H01L29/7396 ,  H01L29/7397

    摘要： An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region.

    摘要翻译： IGBT具有发射极区域，形成在发射极区域下方的顶部主体区域，形成在顶部主体区域下方的浮动区域，形成在浮动区域下方的底部区域，沟槽，栅极绝缘膜 覆盖沟槽的内表面和布置在沟槽内的栅电极。 当沿着半导体衬底的厚度方向观察位于发射极区域下方的顶体区域和浮动区域中的p型杂质浓度的分布时，p型杂质的浓度随着 向下的距离从位于发射极区域下方的顶部主体区域的上端增加，并且在浮动区域中在预定深度处呈现局部最小值。