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    IGBT with a built-in-diode
    5.
    发明授权
    IGBT with a built-in-diode 有权
    IGBT内置二极管

    公开(公告)号：US09412737B2

    公开(公告)日：2016-08-09

    申请号：US14888291

    申请日：2013-05-23

    申请人： Jun Saito ,  Satoru Machida ,  Yusuke Yamashita

    发明人： Jun Saito ,  Satoru Machida ,  Yusuke Yamashita

    IPC分类号： H01L29/732 ,  H01L27/07 ,  H01L29/739 ,  H01L29/872 ,  H01L29/06 ,  H01L29/36 ,  H01L29/423

    CPC分类号： H01L27/0716 ,  H01L27/0727 ,  H01L27/0766 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/7397 ,  H01L29/872

    摘要： When an IGBT has a barrier layer 10 that separates an upper body region 8a from a lower body region 8b, conductivity modulation is enhanced and on-resistance decreases. When the IGBT also has a Schottky contact region 6 that extends to reach the barrier layer 10, a diode structure can be obtained. In this case, however, a saturation current increases as well as short circuit resistance decreases. The Schottky contact region 6 is separated from the emitter region 4 by the upper body region 8a. By selecting an impurity concentration in the region 8a, an increase in a saturation current can be avoided. Alternatively, a block structure that prevents a depletion layer extending from the region 6 into the region 8a from joining a depletion layer extending from the region 4 into the region 8a may be provided in an area separating the region 6 from the region 4.

    摘要翻译： 当IGBT具有将上部区域8a与下部主体区域8b分隔开的阻挡层10时，电导率调制增强，导通电阻降低。 当IGBT也具有延伸到达阻挡层10的肖特基接触区域6时，可以获得二极管结构。 然而，在这种情况下，饱和电流增加以及短路电阻降低。 肖特基接触区域6通过上体区域8a与发射极区域4分离。 通过选择区域8a中的杂质浓度，可以避免饱和电流的增加。 或者，可以在将区域6与区域4分离的区域中设置防止从区域6延伸到区域8a中的耗尽层与从区域4延伸到区域8a的耗尽层连接的块结构。

    Reverse conducting IGBT
    6.
    发明授权
    Reverse conducting IGBT 有权
    反向导通IGBT

    公开(公告)号：US09099521B2

    公开(公告)日：2015-08-04

    申请号：US14182923

    申请日：2014-02-18

    申请人： Yusuke Yamashita ,  Satoru Machida ,  Jun Saito

    发明人： Yusuke Yamashita ,  Satoru Machida ,  Jun Saito

    IPC分类号： H01L29/739 ,  H01L29/861 ,  H01L29/08 ,  H01L29/10

    CPC分类号： H01L29/7395 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/7397 ,  H01L29/8611

    摘要： A reverse conducting IGBT that includes an insulated gate; a semiconductor layer having a first conductivity type drift region, a second conductivity type body region, a first conductivity type emitter region, and a second conductivity type intermediate region; and an emitter electrode provided on a surface of the semiconductor layer. The first conductivity type drift region of the semiconductor layer contacts the insulated gate. The second conductivity type body region of the semiconductor layer is provided on the drift region and contacts the insulated gate. The first conductivity type emitter region of the semiconductor layer is provided on the body region and contacts the insulated gate. The second conductivity type intermediate region of the semiconductor layer is provided on the emitter region and is interposed between the emitter region and the emitter electrode.

    摘要翻译： 包括绝缘栅极的反向导通IGBT; 具有第一导电类型漂移区域，第二导电类型体区域，第一导电类型发射极区域和第二导电类型中间区域的半导体层; 以及设置在半导体层的表面上的发射电极。 半导体层的第一导电型漂移区域与绝缘栅极接触。 半导体层的第二导电类型体区设置在漂移区上并与绝缘栅接触。 半导体层的第一导电型发射极区域设置在主体区域上并与绝缘栅极接触。 半导体层的第二导电类型中间区域设置在发射极区域上并且插入在发射极区域和发射极电极之间。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08716747B2

    公开(公告)日：2014-05-06

    申请号：US13366896

    申请日：2012-02-06

    申请人： Jun Saito ,  Sachiko Aoi ,  Takahide Sugiyama

    发明人： Jun Saito ,  Sachiko Aoi ,  Takahide Sugiyama

    IPC分类号： H01L29/66

    CPC分类号： H01L27/0664 ,  H01L29/0834 ,  H01L29/32 ,  H01L29/7397 ,  H01L29/861

    摘要： A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region. The second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region. In the plan view, a tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region.

    摘要翻译： 二极管区域和IGBT区域形成在半导体器件的半导体层中。 在半导体层中形成寿命受控区域。 在平面图中，寿命受控区域具有位于二极管区域中的第一寿命受控区域和位于IGBT区域的一部分中的第二寿命受控区域。 第二寿命受控区域从二极管区域和IGBT区域的边界向IGBT区域延伸。 在平面图中，第二寿命受控区域的尖端位于IGBT区域的体区的形成区域中。

    Semiconductor devices
    9.
    发明授权
    Semiconductor devices 有权
    半导体器件

    公开(公告)号：US07423316B2

    公开(公告)日：2008-09-09

    申请号：US11596063

    申请日：2005-05-12

    申请人： Sachiko Kawaji ,  Masayasu Ishiko ,  Takahide Sugiyama ,  Masanori Usui ,  Jun Saito ,  Koji Hotta

    发明人： Sachiko Kawaji ,  Masayasu Ishiko ,  Takahide Sugiyama ,  Masanori Usui ,  Jun Saito ,  Koji Hotta

    IPC分类号： H01L29/94

    CPC分类号： H01L29/1095 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397

    摘要： The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n− type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).

    摘要翻译： 可以在形成在IGBT的体区内的浮置状态的半导体区域的宽范围内获得空穴载流子的密集堆积。 在p型体区域（28）内形成有浮置电位的n型半导体区域（52）。 n型半导体区域（52）通过身体区域（28）与n + +型发射极区域（32）和n + SUP类型漂移区域（26）隔离 ）。 此外，形成第二电极（62），以经由绝缘膜（64）与半导体区域（52）的至少一部分相对。 第二电极（62）不与发射极区域（32）相对。

    Semiconductor Devices
    10.
    发明申请
    Semiconductor Devices 有权
    半导体器件

    公开(公告)号：US20080012040A1

    公开(公告)日：2008-01-17

    申请号：US11596063

    申请日：2005-05-12

    申请人： Jun Saito ,  Koji Hotta ,  Sachiko Kawaji ,  Masayasu Ishiko ,  Takahide Sugiyama ,  Masanori Usui

    发明人： Jun Saito ,  Koji Hotta ,  Sachiko Kawaji ,  Masayasu Ishiko ,  Takahide Sugiyama ,  Masanori Usui

    IPC分类号： H01L29/739

    CPC分类号： H01L29/1095 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397

    摘要： The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n− type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).

    摘要翻译： 可以在形成在IGBT的体区内的浮置状态的半导体区域的宽范围内获得空穴载流子的密集堆积。 在p型体区域（28）内形成有浮置电位的n型半导体区域（52）。 n型半导体区域（52）通过身体区域（28）与n + +型发射极区域（32）和n + SUP类型漂移区域（26）隔离 ）。 此外，形成第二电极（62），以经由绝缘膜（64）与半导体区域（52）的至少一部分相对。 第二电极（62）不与发射极区域（32）相对。