摘要:
A system, method, and computer program product for measuring wall thickness. After an internal body topology of the model is generated, the topology is traversed between wall elements to determine wall thickness.
摘要:
A system, method, and computer program product for measuring wall thickness. After an internal body topology of the model is generated, the topology is traversed between wall elements to determine wall thickness.
摘要:
A system, method, and computer program product for measuring wall thickness. After an internal body topology of the model is generated, the topology is traversed between wall elements to determine wall thickness.
摘要:
A system, method, and computer program for calculating internal volume of a solid model, comprising selecting a seed cube that is internal to a solid model; determining a plurality of surrounding cubes surrounding said seed cube; and calculating a boundary volume from said plurality of surrounding cubes, and appropriate means and computer-readable instructions.
摘要:
A system, method, and computer program product for decomposing a product model into manufacturing specific regions, including a corresponding system, method, and computer program product incorporating an object view visualization method for decomposing a product model into manufacturing specific regions.
摘要:
In a nonvolatile memory array that stores randomized data, the program level—the number of states per cell stored in a population of memory cells—may be determined from the aggregated results of a single read step. A circuit for aggregating binary results of a read step includes parallel transistors with control gates connected to the data latches holding the binary results, so that current flow through the combined transistors depends on the binary results.
摘要:
Non-volatile storage devices and techniques for operating non-volatile storage are described herein. One embodiment includes accessing “n” pages of data to be programmed into a group of non-volatile storage elements. The “n” pages are mapped to a data state for each of the non-volatile storage elements based on a coding scheme that evenly distributes read errors across the “n” pages of data. Each of the non-volatile storage elements in the group are programmed to a threshold voltage range based on the data states to which the plurality of pages have been mapped. The programming may include programming the “n” pages simultaneously. In one embodiment, mapping the plurality of pages is based on a coding scheme that distributes a significant failure mode (for example, program disturb errors) to a first of the pages and a significant failure mode (for example, data retention errors) to a second of the pages.
摘要:
A corrugated settling cup (5) is provided, wherein the cup has a cup body, an opening and a location step (52) are provided at the bottom (55) of the cup body, several location holes (53) are formed at the top of the location step (52), location projections (54) corresponding to the location holes (53) are formed at the bottom (55) of the corrugated settling cup (5), wherein the external profile of the corrugated settling cup body rises along the axial direction in a corrugated shape. A multi-cup uniform flux gas anchor is provided, wherein the gas anchor includes a central pipe (7), several corrugated settling cups (5), several settling cups protection bodies (6) and a well-flushing valve (9), wherein the external profile of the corrugated settling cup body rises along the axial direction in a corrugated shape.
摘要:
Techniques and corresponding circuitry are presented for the detection of broken wordlines in a memory array. An “inter-word-line” comparison where the program loop counts of different word-lines are compared in order to determine whether a word-line may be defective. The number of programming pulses needed for the cells along a word-line WLn is compared to the number needed for a preceding word-line, such as WLn or WL(n−1), to see whether it exceeds this earlier value by a threshold value. If the word-line requires an excessive number of pulses, relative the earlier word-line, to complete programming, it is treated as defective.
摘要:
Structures and techniques are disclosed for reducing bit line to bit line capacitance in a non-volatile storage system. The bit lines are formed at a 4ƒpitch in each of two separate metal layers, and arranged to alternate between each of the layers. In an alternative embodiment, shields are formed between each of the bit lines on each metal layer.