公开(公告)号：US07447065B2

公开(公告)日：2008-11-04

申请号：US12021741

申请日：2008-01-29

申请人： Yupin Fong ,  Jun Wan ,  Jeffrey Lutze

发明人： Yupin Fong ,  Jun Wan ,  Jeffrey Lutze

IPC分类号： G11C11/34

CPC分类号： G11C16/3418 ,  G11C16/3427

摘要： A system is disclosed for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source side of the NAND string channel during a read process. Because the source side of the NAND string channel is not boosted, at least one form of read disturb is minimized or does not occur.

公开(公告)号：US07262994B2

公开(公告)日：2007-08-28

申请号：US11296087

申请日：2005-12-06

申请人： Yupin Fong ,  Jun Wan ,  Jeffrey Lutze

发明人： Yupin Fong ,  Jun Wan ,  Jeffrey Lutze

IPC分类号： G11C11/34

CPC分类号： G11C16/3418 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3427

摘要： A system for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source side of the NAND string channel during a read process. Because the source side of the NAND string channel is not boosted, at least one form of read disturb is minimized or does not occur.

公开(公告)号：US20080137411A1

公开(公告)日：2008-06-12

申请号：US12021761

申请日：2008-01-29

申请人： Yupin Fong ,  Jun Wan ,  Jeffrey Lutze

发明人： Yupin Fong ,  Jun Wan ,  Jeffrey Lutze

IPC分类号： G11C16/26

CPC分类号： G11C16/3418 ,  G11C16/3427

摘要： A system is disclosed for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source side of the NAND string channel during a read process. Because the source side of the NAND string channel is not boosted, at least one form of read disturb is minimized or does not occur.

公开(公告)号：US07254071B2

公开(公告)日：2007-08-07

申请号：US11332567

申请日：2006-01-12

申请人： Loc Tu ,  Jeffrey Lutze ,  Jun Wan ,  Jian Chen

发明人： Loc Tu ,  Jeffrey Lutze ,  Jun Wan ,  Jian Chen

IPC分类号： G11C29/00

CPC分类号： G11C16/0483 ,  G11C7/16 ,  G11C11/5628 ,  G11C16/04 ,  G11C16/12 ,  G11C16/3454 ,  G11C16/3459 ,  G11C27/005 ,  G11C29/028 ,  G11C29/48 ,  G11C29/50 ,  G11C29/50004 ,  G11C2029/5004 ,  G11C2211/5621 ,  G11C2211/5634

摘要： A flash memory device of the multi-level cell (MLC) type, in which control gate voltages in read and programming operations and a bandgap reference voltage source are trimmable from external terminals, is disclosed. In a special test mode, control gate voltages can be applied to a selected programmed memory cell so that the threshold voltage of the cell can be sensed. A digital-to-analog converter (DAC) use for programming and a second read/verify DAC apply varying analog voltages and are sequentially used to verify the programming of an associated set of memory cells in this special test mode, with the DAC input values that provide the closest result selected for use in normal operation. These DAC's are dependent on the value of a reference source that my also be trimmed.

摘要翻译： 公开了一种多电平单元（MLC）类型的闪速存储器件，其中读取和编程操作中的控制栅极电压和带隙基准电压源可从外部端子进行调节。 在特殊测试模式中，可以将控制栅极电压施加到所选择的编程存储单元，从而可以感测单元的阈值电压。 用于编程的数/模转换器（DAC）和第二读/验用DAC应用变化的模拟电压，并且在该特殊测试模式下依次用于验证相关联的存储器单元的编程，DAC输入值 它提供了选择用于正常操作的最接近的结果。 这些DAC取决于我也被修剪的参考源的值。

公开(公告)号：US20070133295A1

公开(公告)日：2007-06-14

申请号：US11295776

申请日：2005-12-06

申请人： Yupin Fong ,  Jun Wan ,  Jeffrey Lutze

发明人： Yupin Fong ,  Jun Wan ,  Jeffrey Lutze

IPC分类号： G11C16/06

CPC分类号： G11C16/3418 ,  G11C16/3427

摘要： A system is disclosed for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source side of the NAND string channel during a read process. Because the source side of the NAND string channel is not boosted, at least one form of read disturb is minimized or does not occur.

摘要翻译： 公开了一种用于减少或去除非易失性存储设备中的读取干扰形式的系统。 一个实施例旨在通过消除或最小化存储器元件的通道的升高来防止读取干扰。 例如，一个实施方式在读取过程期间防止或减少NAND串通道的源极侧的升压。 因为NAND串通道的源极侧不被提升，所以读取干扰的至少一种形式被最小化或不发生。

公开(公告)号：US20070025156A1

公开(公告)日：2007-02-01

申请号：US11394441

申请日：2006-03-31

申请人： Jun Wan ,  Jeffrey Lutze

发明人： Jun Wan ,  Jeffrey Lutze

IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/10

摘要： The maximum allowable number of voltage programming pulses to program memory elements of a non-volatile memory device is adjusted to account for changes in the memory elements which occur over time. Programming pulses are applied until the threshold voltage of one or more memory elements reaches a certain verify level, after which a defined maximum number of additional pulses may be applied to other memory elements to allow them to also Teach associated target threshold voltage levels. The technique enforces a maximum allowable number of programming pulses that can change over time as the memory is cycled.

摘要翻译： 调整非易失性存储器件对程序存储器元件的电压编程脉冲的最大允许数量，以便考虑随时间发生的存储元件的变化。 施加编程脉冲，直到一个或多个存储器元件的阈值电压达到某个验证电平，在此之后，定义的最大数量的附加脉冲可以被施加到其它存储器元件，以允许它们也教导相关联的目标阈值电压电平。 该技术实现了随着存储器循环而随时间变化的最大允许编程脉冲数。

公开(公告)号：US07457178B2

公开(公告)日：2008-11-25

申请号：US11331479

申请日：2006-01-12

申请人： Loc Tu ,  Jeffrey Lutze ,  Jun Wan ,  Jian Chen

发明人： Loc Tu ,  Jeffrey Lutze ,  Jun Wan ,  Jian Chen

IPC分类号： G11C29/00

CPC分类号： G11C16/30 ,  G11C11/5628 ,  G11C16/04 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028

摘要： A flash memory device of the multi-level cell (MLC) type, in which control gate voltages in read and programming operations and a bandgap reference voltage source are trimmable from external terminals, is disclosed. In a special test mode, control gate voltages can be applied to a selected programmed memory cell so that the threshold voltage of the cell can be sensed. A digital-to-analog converter (DAC) use for programming and a second read/verify DAC apply varying analog voltages and are sequentially used to verify the programming of an associated set of memory cells in this special test mode, with the DAC input values that provide the closest result selected for use in normal operation. These DAC's are dependent on the value of a reference source that my also be trimmed.

摘要翻译： 公开了一种多电平单元（MLC）类型的闪速存储器件，其中读取和编程操作中的控制栅极电压和带隙基准电压源可从外部端子进行调节。 在特殊测试模式中，可以将控制栅极电压施加到所选择的编程存储单元，从而可以感测单元的阈值电压。 用于编程的数/模转换器（DAC）和第二读/验用DAC应用变化的模拟电压，并且在该特殊测试模式下依次用于验证相关联的存储器单元的编程，DAC输入值 它提供了选择用于正常操作的最接近的结果。 这些DAC取决于我也被修剪的参考源的值。

公开(公告)号：US07447086B2

公开(公告)日：2008-11-04

申请号：US11866261

申请日：2007-10-02

申请人： Jun Wan ,  Jeffrey Lutze ,  Masaaki Higashitani ,  Gerrit Jan Hemink ,  Ken Oowada ,  Jian Chen ,  Geoffrey S Gongwer

发明人： Jun Wan ,  Jeffrey Lutze ,  Masaaki Higashitani ,  Gerrit Jan Hemink ,  Ken Oowada ,  Jian Chen ,  Geoffrey S Gongwer

IPC分类号： G11C7/00

CPC分类号： G11C16/3418

摘要： A non-volatile memory system is programmed so as to reduce or avoid program disturb. In accordance with one embodiment, multiple program inhibit schemes are employed for a single non-volatile memory system. Program inhibit schemes are selected based on the word line being programmed. Certain program inhibit schemes have been discovered to better minimize or eliminate program disturb at select word lines. In one embodiment, selecting a program inhibit scheme includes selecting a program voltage pulse ramp rate. Different ramp rates have been discovered to better minimize program disturb when applied to select word lines. In another embodiment, the temperature of a memory system is detected before or during a program operation. A program inhibit scheme can be selected based on the temperature of the system.

摘要翻译： 编程非易失性存储器系统以减少或避免编程干扰。 根据一个实施例，对于单个非易失性存储器系统采用多个程序禁止方案。 基于正在编程的字线选择程序禁止方案。 已经发现某些程序禁止方案能够更好地最小化或消除选择字线上的程序干扰。 在一个实施例中，选择编程禁止方案包括选择编程电压脉冲斜率。 在应用于选择字线时，已经发现了不同的斜率以更好地最小化程序干扰。 在另一个实施例中，在程序操作之前或期间检测存储器系统的温度。 可以基于系统的温度来选择程序禁止方案。

公开(公告)号：US07349258B2

公开(公告)日：2008-03-25

申请号：US11295776

申请日：2005-12-06

申请人： Yupin Fong ,  Jun Wan ,  Jeffrey Lutze

发明人： Yupin Fong ,  Jun Wan ,  Jeffrey Lutze

IPC分类号： G11C11/34

CPC分类号： G11C16/3418 ,  G11C16/3427

摘要： A system is disclosed for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source side of the NAND string channel during a read process. Because the source side of the NAND string channel is not boosted, at least one form of read disturb is minimized or does not occur.

公开(公告)号：US20070159888A1

公开(公告)日：2007-07-12

申请号：US11332567

申请日：2006-01-12

申请人： Loc Tu ,  Jeffrey Lutze ,  Jun Wan ,  Jian Chen

发明人： Loc Tu ,  Jeffrey Lutze ,  Jun Wan ,  Jian Chen

IPC分类号： G11C16/06

CPC分类号： G11C16/0483 ,  G11C7/16 ,  G11C11/5628 ,  G11C16/04 ,  G11C16/12 ,  G11C16/3454 ,  G11C16/3459 ,  G11C27/005 ,  G11C29/028 ,  G11C29/48 ,  G11C29/50 ,  G11C29/50004 ,  G11C2029/5004 ,  G11C2211/5621 ,  G11C2211/5634

摘要： A flash memory device of the multi-level cell (MLC) type, in which control gate voltages in read and programming operations and a bandgap reference voltage source are trimmable from external terminals, is disclosed. In a special test mode, control gate voltages can be applied to a selected programmed memory cell so that the threshold voltage of the cell can be sensed. A digital-to-analog converter (DAC) use for programming and a second read/verify DAC apply varying analog voltages and are sequentially used to verify the programming of an associated set of memory cells in this special test mode, with the DAC input values that provide the closest result selected for use in normal operation. These DAC's are dependent on the value of a reference source that my also be trimmed.

摘要翻译： 公开了一种多电平单元（MLC）类型的闪速存储器件，其中读取和编程操作中的控制栅极电压和带隙基准电压源可从外部端子进行调节。 在特殊测试模式中，可以将控制栅极电压施加到所选择的编程存储单元，从而可以感测单元的阈值电压。 用于编程的数/模转换器（DAC）和第二读/验用DAC应用变化的模拟电压，并且在该特殊测试模式下依次用于验证相关联的存储器单元的编程，DAC输入值 它提供了选择用于正常操作的最接近的结果。 这些DAC取决于我也被修剪的参考源的值。