公开(公告)号：US07406108B2

公开(公告)日：2008-07-29

申请号：US11500916

申请日：2006-08-09

申请人： Jun-ho Lee ,  Taek Kim ,  Sang-moon Lee

发明人： Jun-ho Lee ,  Taek Kim ,  Sang-moon Lee

IPC分类号： H01S3/10

CPC分类号： H01S5/18383 ,  H01S3/08072 ,  H01S3/109 ,  H01S5/0213 ,  H01S5/024 ,  H01S5/041 ,  H01S5/141 ,  H01S5/18305

摘要： The VECSEL includes: a heat spreader dissipating generated heat; a laser chip that is disposed on the heat spreader and is excited by a pump beam of a predetermined wavelength to emit a beam of a first wavelength; a Second Harmonic Generation (SHG) crystal that is disposed on the laser chip or the heat spreader and converts the laser beam of the first wavelength emitted from the laser chip into a beam having a second wavelength that is one-half the first wavelength; and a planar external cavity mirror that is directly formed on the SHG crystal and has a predetermined transmittance with respect to the beam of the second wavelength.

摘要翻译： VECSEL包括：散热器散热产生的热量; 激光芯片，其布置在散热器上并被预定波长的泵浦光束激发以发射第一波长的光束; 第二谐波产生（SHG）晶体，其设置在激光芯片或散热器上，并将从激光芯片发射的第一波长的激光束转换成具有第二波长的第二波长的第一波长的一半的光束; 以及直接形成在SHG晶体上并且相对于第二波长的光束具有预定透射率的平面外腔镜。

公开(公告)号：US20070165689A1

公开(公告)日：2007-07-19

申请号：US11500916

申请日：2006-08-09

申请人： Jun-ho Lee ,  Taek Kim ,  Sang-moon Lee

发明人： Jun-ho Lee ,  Taek Kim ,  Sang-moon Lee

IPC分类号： H01S3/10 ,  H01S3/04 ,  H01S3/091 ,  H01S3/08 ,  H01S3/092

CPC分类号： H01S5/18383 ,  H01S3/08072 ,  H01S3/109 ,  H01S5/0213 ,  H01S5/024 ,  H01S5/041 ,  H01S5/141 ,  H01S5/18305

摘要： The VECSEL includes: a heat spreader dissipating generated heat; a laser chip that is disposed on the heat spreader and is excited by a pump beam of a predetermined wavelength to emit a beam of a first wavelength; a Second Harmonic Generation (SHG) crystal that is disposed on the laser chip or the heat spreader and converts the laser beam of the first wavelength emitted from the laser chip into a beam having a second wavelength that is one-half the first wavelength; and a planar external cavity mirror that is directly formed on the SHG crystal and has a predetermined transmittance with respect to the beam of the second wavelength.

摘要翻译： VECSEL包括：散热器散热产生的热量; 激光芯片，其布置在散热器上并被预定波长的泵浦光束激发以发射第一波长的光束; 第二谐波产生（SHG）晶体，其设置在激光芯片或散热器上，并将从激光芯片发射的第一波长的激光束转换成具有第二波长的第二波长的第一波长的一半的光束; 以及直接形成在SHG晶体上并且相对于第二波长的光束具有预定透射率的平面外腔镜。

公开(公告)号：US20080123699A1

公开(公告)日：2008-05-29

申请号：US11980350

申请日：2007-10-31

申请人： Sang-moon Lee ,  Jun-ho Lee

发明人： Sang-moon Lee ,  Jun-ho Lee

IPC分类号： H01S5/34

CPC分类号： H01S5/041 ,  H01S5/0071 ,  H01S5/026 ,  H01S5/141 ,  H01S5/183 ,  H01S5/4056

摘要： Provided is a pump laser integrated vertical external cavity surface emitting laser (VECSEL). The VECSEL may include a surface emitting laser unit including a first active layer having a multiple quantum well structure emitting light having a first wavelength, a reflective layer may be formed on the first active layer, and an external mirror may be disposed opposite to a lower surface of the first active layer and defining a cavity resonator together with the reflective layer. A pump laser unit may be formed on a part of the surface emitting laser unit and may have a perpendicular light emissive surface emitting a pump beam having a second wavelength for exciting the first active layer. A beam reflector may be formed on the light emissive surface of the pump laser unit and reflecta pump beam that is incident from the pump laser unit to the first active layer.

摘要翻译： 提供了一种泵浦激光器集成的垂直外腔表面发射激光器（VECSEL）。 VECSEL可以包括表面发射激光器单元，其包括具有发射具有第一波长的光的多重量子阱结构的第一有源层，反射层可以形成在第一有源层上，并且外部反射镜可以布置成与下部 第一有源层的表面并与反射层一起限定空腔谐振器。 泵激光单元可以形成在表面发射激光器单元的一部分上，并且可以具有发射具有用于激发第一有源层的第二波长的泵浦光束的垂直光发射表面。 光束反射器可以形成在泵激光单元的发光表面上，并且反射从泵激光单元入射到第一有源层的泵浦光束。

公开(公告)号：US07653113B2

公开(公告)日：2010-01-26

申请号：US11980350

申请日：2007-10-31

申请人： Sang-moon Lee ,  Jun-ho Lee

发明人： Sang-moon Lee ,  Jun-ho Lee

IPC分类号： H01S3/093

CPC分类号： H01S5/041 ,  H01S5/0071 ,  H01S5/026 ,  H01S5/141 ,  H01S5/183 ,  H01S5/4056

摘要： Provided is a pump laser integrated vertical external cavity surface emitting laser (VECSEL). The VECSEL may include a surface emitting laser unit including a first active layer having a multiple quantum well structure emitting light having a first wavelength, a reflective layer may be formed on the first active layer, and an external mirror may be disposed opposite to a lower surface of the first active layer and defining a cavity resonator together with the reflective layer. A pump laser unit may be formed on a part of the surface emitting laser unit and may have a perpendicular light emissive surface emitting a pump beam having a second wavelength for exciting the first active layer. A beam reflector may be formed on the light emissive surface of the pump laser unit and reflecta pump beam that is incident from the pump laser unit to the first active layer.

摘要翻译： 提供了一种泵浦激光器集成的垂直外腔表面发射激光器（VECSEL）。 VECSEL可以包括表面发射激光器单元，其包括具有发射具有第一波长的光的多重量子阱结构的第一有源层，反射层可以形成在第一有源层上，并且外部反射镜可以布置成与下部 第一有源层的表面并与反射层一起限定空腔谐振器。 泵激光单元可以形成在表面发射激光器单元的一部分上，并且可以具有发射具有用于激发第一有源层的第二波长的泵浦光束的垂直光发射表面。 光束反射器可以形成在泵激光单元的发光表面上，并且反射从泵激光单元入射到第一有源层的泵浦光束。

公开(公告)号：US20080112443A1

公开(公告)日：2008-05-15

申请号：US11907473

申请日：2007-10-12

申请人： Jun-ho Lee ,  Sang-moon Lee

发明人： Jun-ho Lee ,  Sang-moon Lee

IPC分类号： H01S5/183

CPC分类号： H01S5/14 ,  H01S3/109 ,  H01S5/0207 ,  H01S5/024 ,  H01S5/041 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18369

摘要： Provided is a Vertical External Cavity Surface Emitting Laser (VECSEL). The VECSEL includes a semiconductor chip, a pump laser, a narrow bandwidth polarization filter, an external mirror, and a Second Harmonic Generation (SHG) element. The semiconductor chip includes an active layer generating light having a wavelength and a reflective layer reflecting the light generated in the active layer. The pump laser emits a pump beam for exciting the active layer. The narrow bandwidth polarization filter is formed on the semiconductor chip and polarizes the light. The external mirror faces the active layer, amplifies the light emitted from the active layer by repeatedly reflecting the light toward the reflective layer, and outputs the amplified light out of the VECSEL. The SHG element is disposed between the narrow bandwidth polarization filter and the external mirror and converts the wavelength of the light.

摘要翻译： 提供垂直外腔表面发射激光（VECSEL）。 VECSEL包括半导体芯片，泵浦激光器，窄带偏振滤波器，外部反射镜和第二谐波发生（SHG）元件。 半导体芯片包括产生具有波长的光的有源层和反射在有源层中产生的光的反射层。 泵激光器发射用于激发有源层的泵浦光束。 窄带偏振滤波器形成在半导体芯片上并使光线偏振。 外部反射镜面向有源层，通过反射反射层向反射层反射来放大从有源层发射的光，并将放大的光输出VECSEL。 SHG元件设置在窄带偏振滤光器和外反射镜之间，并转换光的波长。

公开(公告)号：US07573920B2

公开(公告)日：2009-08-11

申请号：US11907473

申请日：2007-10-12

申请人： Jun-ho Lee ,  Sang-moon Lee

发明人： Jun-ho Lee ,  Sang-moon Lee

IPC分类号： H01S3/10

CPC分类号： H01S5/14 ,  H01S3/109 ,  H01S5/0207 ,  H01S5/024 ,  H01S5/041 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18369

摘要： Provided is a Vertical External Cavity Surface Emitting Laser (VECSEL). The VECSEL includes a semiconductor chip, a pump laser, a narrow bandwidth polarization filter, an external mirror, and a Second Harmonic Generation (SHG) element. The semiconductor chip includes an active layer generating light having a wavelength and a reflective layer reflecting the light generated in the active layer. The pump laser emits a pump beam for exciting the active layer. The narrow bandwidth polarization filter is formed on the semiconductor chip and polarizes the light. The external mirror faces the active layer, amplifies the light emitted from the active layer by repeatedly reflecting the light toward the reflective layer, and outputs the amplified light out of the VECSEL. The SHG element is disposed between the narrow bandwidth polarization filter and the external mirror and converts the wavelength of the light.

摘要翻译： 提供垂直外腔表面发射激光（VECSEL）。 VECSEL包括半导体芯片，泵浦激光器，窄带偏振滤波器，外部反射镜和第二谐波发生（SHG）元件。 半导体芯片包括产生具有波长的光的有源层和反射在有源层中产生的光的反射层。 泵激光器发射用于激发有源层的泵浦光束。 窄带偏振滤波器形成在半导体芯片上并使光线偏振。 外部反射镜面向有源层，通过反射反射层向反射层反射来放大从有源层发射的光，并将放大的光输出VECSEL。 SHG元件设置在窄带偏振滤光器和外反射镜之间，并转换光的波长。

公开(公告)号：US07701876B2

公开(公告)日：2010-04-20

申请号：US11401944

申请日：2006-04-12

申请人： Soon-churl Shin ,  Sang-moon Lee ,  Woo-lin Yang

发明人： Soon-churl Shin ,  Sang-moon Lee ,  Woo-lin Yang

IPC分类号： H04L12/28 ,  H04L12/56

CPC分类号： H04L61/2038 ,  H04L29/12254 ,  H04L45/00

摘要： A message transmission method and device are provided. The message transmission method, which is carried out by a node in a mixed network comprised of a private network including at least one node and a public network, includes: checking whether an address of a destination node to receive a message is recorded in a communication node list of the node, when the address of the destination node is not the address of the node; transmitting the message to the destination node recorded, when it is determined that the address of the destination node is recorded in the communication node list; and transmitting the message and the address of the destination node to a node having an address closest to the address of the destination node among the addresses recorded in the communication node list, when the address of the destination node is not recorded in the communication node list.

摘要翻译： 提供了一种消息传输方法和装置。 由包括至少一个节点和公共网络的专用网络的混合网络中的节点执行的消息传输方法包括：检查接收消息的目的地节点的地址是否被记录在通信中 节点的节点列表，当目标节点的地址不是节点的地址时; 当确定所述目的地节点的地址被记录在所述通信节点列表中时，将所述消息发送到所记录的目的地节点; 并且当目的地节点的地址未被记录在通信节点列表中时，将记录在通信节点列表中的地址中的目的地节点的消息和地址发送到具有最接近目的节点地址的地址的节点 。

公开(公告)号：US09425104B2

公开(公告)日：2016-08-23

申请号：US14259569

申请日：2014-04-23

申请人： Moon-seung Yang ,  Mohammad Rakib Uddin ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Seong-ho Cho

发明人： Moon-seung Yang ,  Mohammad Rakib Uddin ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Seong-ho Cho

IPC分类号： H01L21/70 ,  H01L21/8238 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/06 ,  H01L27/092

CPC分类号： H01L21/8238 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/092

摘要： Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer including a group III-V material is disposed on the buffer layer. A second layer including a group IV material is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer.

摘要翻译： 提供互补金属氧化物半导体（CMOS）器件及其制造方法。 在CMOS器件中，在硅衬底上设置缓冲层，并且在缓冲层上设置包括III-V族材料的第一层。 包含IV族材料的第二层设置在缓冲层或硅衬底上，同时与第一层间隔开。

公开(公告)号：US08956936B2

公开(公告)日：2015-02-17

申请号：US13568555

申请日：2012-08-07

申请人： Sang-moon Lee ,  Young-jin Cho

发明人： Sang-moon Lee ,  Young-jin Cho

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/423 ,  H01L29/778

CPC分类号： H01L29/1033 ,  H01L29/42376 ,  H01L29/7787

摘要： A method of forming a group III-V material layer, a semiconductor device including the group III-V material layer, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate; a group III-V channel layer formed on the substrate; a gate insulating layer formed on the group III-V channel layer; and a gate electrode and source and drain electrodes formed on the gate insulating layer, the source and drain electrodes having intervals from the gate electrode, wherein voids exist between a lower portion of the group III-V channel layer and an insulating layer. The group III-V channel layer may include a binary, ternary, or quaternary material.

摘要翻译： 形成III-V族材料层的方法，包括III-V族材料层的半导体器件，以及制造半导体器件的方法。 半导体器件包括衬底; 形成在所述基板上的III-V沟道层; 形成在III-V沟道层上的栅极绝缘层; 以及形成在栅极绝缘层上的栅极电极和源极和漏极，源极和漏极具有与栅极电极的间隔，其中在III-V族沟道层的下部和绝缘层之间存在空隙。 III-V族沟道层可以包括二元，三元或四元材料。

公开(公告)号：US07486714B2

公开(公告)日：2009-02-03

申请号：US11417193

申请日：2006-05-04

申请人： Sang-moon Lee

发明人： Sang-moon Lee

IPC分类号： H01S3/091

CPC分类号： H01S5/183 ,  H01S3/109 ,  H01S5/0207 ,  H01S5/026 ,  H01S5/041 ,  H01S5/1085 ,  H01S5/14 ,  H01S5/18 ,  H01S5/4043

摘要： Provided is a vertical external cavity surface emitting laser (VECSEL) in which a pump laser is integrated with the rest of the VECSEL as a single body. The VECSEL includes: a first active layer that has a quantum well structure and generates light with a first wavelength; a reflection layer formed on a first surface of the first active layer; an external mirror that is separated by a predetermined distance from a second surface of the first active layer, transmits a portion of light generated by the first active layer to the outside, and reflects the rest of the light generated by the first active layer to be absorbed by the first active layer; and a pump laser disposed on the reflection layer as a single body to provide light with a second wavelength which is shorter than the first wavelength to the first active layer for optical pumping.

摘要翻译： 提供了一种垂直外腔表面发射激光器（VECSEL），其中泵激光器与其余的VECSEL一体化为一体。 VECSEL包括：具有量子阱结构并产生具有第一波长的光的第一有源层; 反射层，形成在所述第一有源层的第一表面上; 与第一有源层的第二表面隔开预定距离的外部反射镜将由第一有源层产生的光的一部分透射到外部，并将由第一有源层产生的剩余光反射为 被第一活性层吸收; 以及泵激光器，其设置在所述反射层上作为单体，以向所述第一有源层提供具有比所述第一波长短的第二波长的光以进行光泵浦。