公开(公告)号：US4870028A

公开(公告)日：1989-09-26

申请号：US322515

申请日：1989-03-13

申请人： Jun-ichi Nishizawa ,  Hisao Kondoh

发明人： Jun-ichi Nishizawa ,  Hisao Kondoh

CPC分类号： H01L29/7392 ,  H01L29/1066

摘要： A double gate static induction thyristor comprises an n.sup.- semiconductor substrate having first and second principal surfaces opposite to each other. An n.sup.- epitaxial semiconductor layer is formed on the first principal surface of the substrate, and a p.sup.- epitaxial semiconductor layer is formed on the second principal surface of the substrate. A cathode electrode is deposited on the surface of the n.sup.- epitaxial layer, and an anode electrode is deposited on the surface of the p.sup.- epitaxial layer. In addition, a first gate electrode is formed on the first principal surface of the substrate, and a second gate electrode is formed on the second principal surface of the substrate.

公开(公告)号：US5027180A

公开(公告)日：1991-06-25

申请号：US423661

申请日：1989-10-18

申请人： Jun-ichi Nishizawa ,  Hisao Kondoh

发明人： Jun-ichi Nishizawa ,  Hisao Kondoh

IPC分类号： H01L29/74 ,  H01L29/10 ,  H01L29/739

CPC分类号： H01L29/1066 ,  H01L29/7392

摘要： A double gate static induction thyristor comprises a semiconductor substrate, a first gate region formed at a first principal surface of the substrate, and a first semiconductor region of a first conduction type formed on the same first principal surface. A second gate region is formed at a second principal surface of the substrate, and a second semiconductor region of a second conduction type is formed on the same second principal surface. Gate electrodes are formed on the first and second gate regions, and main electrodes are formed on the first and second semiconductor regions, so that portions of the semiconductor regions surrounded by the gate regions form a current path between the main electrodes. Further, impurity is deeply diffused in portions of the first and second gate regions formed with the gate electrodes.

摘要翻译： 双栅极静电感应晶闸管包括半导体衬底，形成在衬底的第一主表面处的第一栅极区域和形成在相同的第一主表面上的第一导电类型的第一半导体区域。 第二栅极区域形成在基板的第二主表面处，并且第二导电类型的第二半导体区域形成在相同的第二主表面上。 栅电极形成在第一和第二栅极区上，并且主电极形成在第一和第二半导体区上，使得被栅极区包围的半导体区域的部分在主电极之间形成电流路径。 此外，在形成有栅电极的第一和第二栅极区域的部分中，杂质被深度扩散。

公开(公告)号：US4837608A

公开(公告)日：1989-06-06

申请号：US219902

申请日：1988-07-14

申请人： Jun-ichi Nishizawa ,  Hisao Kondoh

发明人： Jun-ichi Nishizawa ,  Hisao Kondoh

IPC分类号： H01L29/74 ,  H01L29/10 ,  H01L29/739

CPC分类号： H01L29/7392 ,  H01L29/1066

摘要： A double gate static induction thyristor comprises an n.sup.- semiconductor substrate having first and second principal surfaces opposite to each other. An n.sup.- epitaxial semiconductor layer is formed on the first principal surface of the substrate, and a p.sup.- epitaxial semiconductor layer is formed on the second principal surface of the substrate. A cathode electrode is deposited on the surface of the n.sup.- epitaxial layer, and an anode electrode is deposited on the surface of the p.sup.- epitaxial layer. In addition, a first gate electrode is formed on the first principal surface of the substrate, and a second gate electrode is formed on the second principal surface of the substrate.

摘要翻译： 双栅静电感应晶闸管包括具有彼此相对的第一和第二主表面的n-半导体衬底。 在衬底的第一主表面上形成n-外延半导体层，并且在衬底的第二主表面上形成p-外延半导体层。 阴极电极沉积在n外延层的表面上，阳极电极沉积在p-外延层的表面上。 此外，在基板的第一主表面上形成第一栅电极，在基板的第二主表面上形成第二栅电极。

公开(公告)号：US4673961A

公开(公告)日：1987-06-16

申请号：US839106

申请日：1986-03-13

申请人： Jun-ichi Nishizawa ,  Hisao Kondoh

发明人： Jun-ichi Nishizawa ,  Hisao Kondoh

IPC分类号： H01L29/74 ,  H01L23/051 ,  H01L23/48 ,  H01L29/739 ,  H01L29/80

CPC分类号： H01L24/06 ,  H01L23/051 ,  H01L24/05 ,  H01L24/49 ,  H01L24/72 ,  H01L29/7392 ,  H01L2224/04042 ,  H01L2224/06181 ,  H01L2224/48091 ,  H01L2224/4847 ,  H01L2224/4918 ,  H01L24/48 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/1066 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/1301

摘要： A pressurized contact type double gate static induction thyristor comprising a semiconductor body located in a casing and having cathode electrodes and a first gate electrode at one principal surface side thereof and anode electrodes and a second gate electrode at the other principal surface side thereof. A first thermal expansion stress buffer plate is located in the casing to be in contact with the cathode electrode, and a second thermal expansion stress buffer plate is located at the other principal surface side of the semiconductor body. This second plate is composed of at least two metal members electrically insulated from each other and integrally bonded by an insulating material, one of the two metal members being in contact with the anode electrode and the other metal member being in contact with the second gate electrode.

摘要翻译： 一种加压接触型双栅极静电感应晶闸管，包括位于壳体中的具有阴极电极和在其一个主表面侧的第一栅电极的半导体本体和位于另一主表面侧的第二栅极电极。 第一热膨胀应力缓冲板位于壳体内以与阴极接触，第二热膨胀应力缓冲板位于半导体本体的另一主表面侧。 该第二板由至少两个彼此电绝缘并由绝缘材料一体地结合的金属构件组成，两个金属构件中的一个与阳极电极接触，另一个金属构件与第二栅电极接触 。

公开(公告)号：US5182626A

公开(公告)日：1993-01-26

申请号：US543532

申请日：1990-06-26

申请人： Hajime Akiyama ,  Hisao Kondoh

发明人： Hajime Akiyama ,  Hisao Kondoh

IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/739

CPC分类号： H01L21/263 ,  H01L29/0834 ,  H01L29/66333 ,  H01L29/7395

摘要： In the present invention, baneful influences such as the reduction of the threshold voltage due to the irradiation of an ionizing radiation such as an electron beam and a light ion beam are removed to practice the lifetime control of an IGBT with good controllability. Basically, the lifetime control without change in the threshold voltage is implemented by increasing the threshold voltage on or before irradiating the ionizing radiation so as to cancel the influence of each other. Further, the lifetime control without change in the threshold voltage is implemented with higher accuracy by irradiating a light ion beam from a rear main electrode side so as to cause crystal defects locally in a specific region in an epitaxial layer.

摘要翻译： 在本发明中，除去诸如电子束和光离子束等电离辐射的照射引起的阈值电压的降低等的恶化影响，从而实现具有良好可控性的IGBT的寿命控制。 基本上，通过在照射电离辐射之前或之前增加阈值电压来实现阈值电压的变化，从而消除彼此的影响。 此外，通过从后部主电极侧照射光离子束，以更高的精度实现阈值电压的变化的寿命控制，从而在外延层的特定区域局部引起晶体缺陷。

公开(公告)号：US4990978A

公开(公告)日：1991-02-05

申请号：US296861

申请日：1989-01-13

申请人： Hisao Kondoh

发明人： Hisao Kondoh

IPC分类号： H01L29/68 ,  H01L27/04 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/7395 ,  H01L2924/0002

摘要： A semiconductor substrate is provided thereon with an insulated gate bipolar transistor which is a composite element of a pnpn thyristor and an N-channel MOS-FET. In order to monitor operating current of the insulated gate bipolar transistor, a monitor terminal is provided in addition to collector, emitter and gate terminals. The operating current of the insulated gate bipolar transistor is monitored through the monitor terminal to perform appropriate protective operation when the operating current reaches a critical region, thereby to prevent occurrence of a latch-up phenomenon.

摘要翻译： 在其上设置有作为pnpn晶闸管和N沟道MOS-FET的复合元件的绝缘栅双极晶体管的半导体基板。 为了监控绝缘栅双极晶体管的工作电流，除了集电极，发射极和栅极端子之外还提供监测端子。 当工作电流达到临界区域时，通过监控终端监控绝缘栅双极型晶体管的工作电流，进行适当的保护操作，从而防止发生闭锁现象。

公开(公告)号：US5292672A

公开(公告)日：1994-03-08

申请号：US862604

申请日：1992-04-01

申请人： Hajime Akiyama ,  Hisao Kondoh

发明人： Hajime Akiyama ,  Hisao Kondoh

IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/739 ,  H01L21/265

CPC分类号： H01L21/263 ,  H01L29/0834 ,  H01L29/66333 ,  H01L29/7395

摘要： In the present invention, baneful influences such as the reduction of the threshold voltage due to the irradiation of an ionizing radiation such as an electron beam and a light ion beam are removed to practice the lifetime control of an IGBT with good controllability. Basically, the lifetime control without change in the threshold voltage is implemented by increasing the threshold voltage on or before irradiating the ionizing radiation so as to cancel the influence of each other. Further, the lifetime control without change in the threshold voltage is implemented with higher accuracy by irradiating a light ion beam from a rear main electrode side so as to cause crystal defects locally in a specific region in an epitaxial layer.

摘要翻译： 在本发明中，除去诸如电子束和光离子束等电离辐射的照射引起的阈值电压的降低等的恶化影响，从而实现具有良好可控性的IGBT的寿命控制。 基本上，通过在照射电离辐射之前或之前增加阈值电压来实现阈值电压的变化，从而消除彼此的影响。 此外，通过从后部主电极侧照射光离子束，以更高的精度实现阈值电压的变化的寿命控制，从而在外延层的特定区域局部引起晶体缺陷。