公开(公告)号：US5475242A

公开(公告)日：1995-12-12

申请号：US425250

申请日：1995-04-17

申请人： Jun-ichi Nishizawa ,  Nobuo Takeda ,  Toshiyuki Kishine

发明人： Jun-ichi Nishizawa ,  Nobuo Takeda ,  Toshiyuki Kishine

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L21/33

CPC分类号： H01L27/092

摘要： A notched insulation gate static induction transistor integrated circuit ording to the present invention comprises an enhancement mode CMOS logic circuit including a notched insulation gate static induction transistor in which a threshold voltage is determined to prevent current from flowing in a standby mode, and a depletion enhancement mode CMOS logic circuit including a notched insulation gate static induction transistor in which a threshold voltage is determined to cause current to slightly flow in the standby mode. The enhancement mode CMOS logic circuit and the depletion enhancement mode CMOS logic circuit are formed on a major surface of a substrate, and the depletion enhancement mode CMOS logic circuit is used in a circuit in which an average power consumption in a switching operation is higher than that in the standby mode.

摘要翻译： 根据本发明的缺口绝缘栅静电感应晶体管集成电路包括增强模式CMOS逻辑电路，其包括其中确定阈值电压以防止电流在待机模式下流动的缺口绝缘栅静电感应晶体管，以及耗尽增强 模式CMOS逻辑电路，其包括在待机模式下确定阈值电压以使电流稍微流动的缺口绝缘栅静电感应晶体管。 增强模式CMOS逻辑电路和耗尽增强模式CMOS逻辑电路形成在衬底的主表面上，并且耗尽增强模式CMOS逻辑电路用于其中开关操作中的平均功耗高于 在待机模式下。

公开(公告)号：US5169795A

公开(公告)日：1992-12-08

申请号：US747699

申请日：1991-08-20

申请人： Jun-ichi Nishizawa ,  Nobuo Takeda

发明人： Jun-ichi Nishizawa ,  Nobuo Takeda

IPC分类号： H01L21/28 ,  H01L21/335 ,  H01L21/60 ,  H01L29/49 ,  H01L29/772 ,  H01L29/78

CPC分类号： H01L21/76897 ,  H01L21/28052 ,  H01L21/2815 ,  H01L29/4933 ,  H01L29/66416 ,  H01L29/7722 ,  H01L29/7827

摘要： This invention provides a step cut type insulated gate static induction tsistor having a first main electrode formed in one major surface of a semiconductor substrate, a second main electrode formed in a bottom portion of a U-shaped groove formed in one major surface of a semiconductor substrate, a control electrode formed on a side wall of the U-shaped groove and consisting of a thin insulating film and a polysilicon layer, and a low-resistance electrode of a refractory metal layer or a refractory metal silicide layer formed in at least part of the side wall of the polysilicon layer of the control electrode.

摘要翻译： 本发明提供了一种具有在半导体衬底的一个主表面上形成的第一主电极的切割型绝缘栅静电感应晶体管，形成在半导体的一个主表面上的U形槽的底部的第二主电极 基板，形成在U形槽的侧壁上并由薄绝缘膜和多晶硅层构成的控制电极以及难熔金属层或难熔金属硅化物层的低电阻电极，其形成在至少部分 的控制电极的多晶硅层的侧壁。

公开(公告)号：US5060029A

公开(公告)日：1991-10-22

申请号：US483740

申请日：1990-02-23

申请人： Jun-ichi Nishizawa ,  Nobuo Takeda

发明人： Jun-ichi Nishizawa ,  Nobuo Takeda

IPC分类号： H01L21/28 ,  H01L21/335 ,  H01L29/49 ,  H01L29/772 ,  H01L29/78

CPC分类号： H01L29/66416 ,  H01L21/28052 ,  H01L21/2815 ,  H01L29/4933 ,  H01L29/7722 ,  H01L29/7827

摘要： This invention provides a step cut type insulated gate static induction tsistor having a first main electrode formed in one major surface of a semiconductor substrate, a second main electrode formed in a bottom portion of a U-shaped groove formed in one major surface of a semiconductor substrate, a control electrode formed on a side wall of the U-shaped groove and consisting of a thin insulating film and a polysilicon layer, and a low-resistance electrode of a refractory metal layer or a refractory metal silicide layer formed in at least part of the side wall of the polysilicon layer of the control electrode.

摘要翻译： 本发明提供了一种具有在半导体衬底的一个主表面上形成的第一主电极的切割型绝缘栅静电感应晶体管，形成在半导体的一个主表面上的U形槽的底部的第二主电极 基板，形成在U形槽的侧壁上并由薄绝缘膜和多晶硅层构成的控制电极以及难熔金属层或难熔金属硅化物层的低电阻电极，其形成在至少部分 的控制电极的多晶硅层的侧壁。

公开(公告)号：US4484207A

公开(公告)日：1984-11-20

申请号：US517381

申请日：1983-07-26

申请人： Jun-ichi Nishizawa ,  Tadahiro Ohmi ,  Nobuo Takeda

发明人： Jun-ichi Nishizawa ,  Tadahiro Ohmi ,  Nobuo Takeda

IPC分类号： H01L29/80 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/205 ,  H01L29/43 ,  H01L29/739 ,  H01L29/161

CPC分类号： H01L29/205 ,  H01L29/432 ,  H01L29/739

摘要： A hetero-junction static induction transistor (SIT) of normal or upside-down type to be operated by applying a forward bias across the gate and source regions, in which at least its source region and gate region among the source, drain and gate regions is formed with a material having a band gap broader than that of the channel region. Such a SIT provides a large current amplification factor, improved frequency characteristics and is suitable for high power operation and for use in semiconductor integrated circuits.

摘要翻译： 通过在栅极和源极区域施加正向偏压来工作的正常或倒置型的异质结静态感应晶体管（SIT），其中源极，漏极和栅极区域中的至少其源极区域和栅极区域 形成有具有比通道区域宽的带隙的材料。 这样的SIT提供了大的电流放大因子，改进的频率特性，并且适用于大功率操作和用于半导体集成电路。

公开(公告)号：US08746991B2

公开(公告)日：2014-06-10

申请号：US13486649

申请日：2012-06-01

申请人： Nobuo Takeda ,  Shu Minakuchi ,  Tadahito Mizutani ,  Junichi Kimoto ,  Noriyoshi Hirano ,  Hiroaki Tsutsui

发明人： Nobuo Takeda ,  Shu Minakuchi ,  Tadahito Mizutani ,  Junichi Kimoto ,  Noriyoshi Hirano ,  Hiroaki Tsutsui

IPC分类号： G02B6/255

CPC分类号： B23P6/00 ,  G01M11/088 ,  G02B6/2555

摘要： A method of repairing an embedded optical fiber of a composite material structure including an embedded optical fiber embedded in a composite material, includes removing a portion of the composite material including a damaged portion of the embedded optical fiber to form an opening portion; polishing an end surface of the embedded optical fiber exposed in the opening portion and an end surface of the composite material exposed in the opening portion; and performing position adjustment such that a core of the polished embedded optical fiber and a core of a replacement optical fiber are aligned with each other, butting the end surface of the embedded optical fiber and an end surface of the replacement optical fiber with each other, and connecting the end surface of the embedded optical fiber and the end surface of the replacement optical fiber together.

摘要翻译： 一种修复嵌入复合材料的嵌入式光纤的复合材料结构的嵌入式光纤的方法，包括去除包含嵌入式光纤的受损部分的复合材料的一部分，形成开口部; 抛光露出在开口部分中的嵌入式光纤的端面和暴露在开口部分中的复合材料的端面; 并且进行位置调整，使得抛光的嵌入式光纤的芯和替换光纤的芯彼此对准，使嵌入式光纤的端面与替换光纤的端面彼此对准， 并将嵌入式光纤的端面与替换光纤的端面连接在一起。

公开(公告)号：US07145633B2

公开(公告)日：2006-12-05

申请号：US10538980

申请日：2003-01-09

申请人： Ikuo Nishimoto ,  Nobuo Takeda ,  Ichitaroh Satoh

发明人： Ikuo Nishimoto ,  Nobuo Takeda ,  Ichitaroh Satoh

IPC分类号： G03B27/58 ,  G03B27/48 ,  G03B27/32 ,  G03F1/00 ,  G03C5/00 ,  G06F19/00

CPC分类号： G03F7/703

摘要： A semiconductor manufacturing station (50) exposes light on a surface area of a spherical semiconductor device or ball (52). A mask pattern generator (56) provides a pattern of light, which undergoes temporal changes to collectively represent an image. The mask pattern generator has an active exposure contour (80) that provides a portion of the overall image. The pattern of light is directed though a lens (62) to the surface area of the semiconductor device. The semiconductor device rotates in relation to the temporal changes in the pattern of light to expose the pattern of light over a portion of a surface area of the semiconductor device. The exposure contour has a narrower center and becomes wider moving away from the center. The exposure contour may have a curvature.

公开(公告)号：US06679118B1

公开(公告)日：2004-01-20

申请号：US10019126

申请日：2002-06-18

申请人： Masayoshi Esashi ,  Takao Murakoshi ,  Shigeru Nakamura ,  Nobuo Takeda

发明人： Masayoshi Esashi ,  Takao Murakoshi ,  Shigeru Nakamura ,  Nobuo Takeda

IPC分类号： G01P15125

CPC分类号： G01P15/125 ,  G01P15/131 ,  G01P15/18

摘要： An object is to provide an accelerometer or a spherical sensor-type measurement device, able to control by means of an active restraining control system a spherical mass part or a spherical sensor part. The accelerometer or spherical sensor-type measurement device has a spherical mass part, which is levitated by electrostatic supporting forces, and electrodes positioned so as to surround the spherical mass part and which have spherical inner surfaces; the above electrodes include a plurality of electrostatic supporting electrodes, positioned symmetrically with respect to the spherical mass part, and a displacement detection electrode, positioned between the electrostatic supporting electrodes.

摘要翻译： 目的是提供一种加速度计或球形传感器型测量装置，其能够通过主动约束控制系统来控制球形质量部分或球形传感器部分。 加速度计或球面传感器型测量装置具有由静电支撑力悬浮的球形质量部分，以及围绕球形质量部分并且具有球形内表面的电极; 上述电极包括相对于球形质量部分对称定位的多个静电支撑电极和位于静电支撑电极之间的位移检测电极。

公开(公告)号：US07696471B2

公开(公告)日：2010-04-13

申请号：US11987533

申请日：2007-11-30

申请人： Toshimichi Ogisu ,  Noritsugu Nakamura ,  Nobuo Takeda

发明人： Toshimichi Ogisu ,  Noritsugu Nakamura ,  Nobuo Takeda

IPC分类号： G01J1/04 ,  G01J1/42 ,  G01J5/08

CPC分类号： G01M11/083 ,  G01D5/35303

摘要： Disclosed is an impact detection system including: an optical fiber including a plurality of sensor sections to reflect light, a wavelength band of the reflected light vibrates depending on an elastic wave propagating through a subject to be inspected; a light source to input light into the optical fiber; optical filters each connected to an output terminal of the optical fiber; and an arithmetic processing unit to detect the impact from output values of sensor sections, wherein the wavelength bands of the sensor sections in the optical fiber are distributed such that the vibration bands caused by the impact to be detected do not overlap with each other, and a pass band of the optical filter corresponding to one of the sensor sections is distributed in the vibration band caused by the detection object, and is distributed in both sides of a center of the wavelength band of the one sensor section.

摘要翻译： 公开了一种冲击检测系统，包括：包括反射光的多个传感器部分的光纤，所述反射光的波长带根据通过要检查的被摄体传播的弹性波而振动; 用于将光输入到光纤中的光源; 各自连接到光纤的输出端子的滤光器; 以及算术处理单元，用于检测传感器部分的输出值的影响，其中光纤中的传感器部分的波长带被分布成使得由待检测的冲击引起的振动带彼此不重叠， 与其中一个传感器部分相对应的滤光器的通带分布在由检测对象引起的振动带中，并分布在一个传感器部分的波长带的中心的两侧。

公开(公告)号：US20080128600A1

公开(公告)日：2008-06-05

申请号：US11987533

申请日：2007-11-30

申请人： Toshimichi Ogisu ,  Noritsugu Nakamura ,  Nobuo Takeda

发明人： Toshimichi Ogisu ,  Noritsugu Nakamura ,  Nobuo Takeda

IPC分类号： G01L1/24

CPC分类号： G01M11/083 ,  G01D5/35303

摘要： Disclosed is an impact detection system including: an optical fiber including a plurality of sensor sections to reflect light, a wavelength band of the reflected light vibrates depending on an elastic wave propagating through a subject to be inspected; a light source to input light into the optical fiber; optical filters each connected to an output terminal of the optical fiber; and an arithmetic processing unit to detect the impact from output values of sensor sections, wherein the wavelength bands of the sensor sections in the optical fiber are distributed such that the vibration bands caused by the impact to be detected do not overlap with each other, and a pass band of the optical filter corresponding to one of the sensor sections is distributed in the vibration band caused by the detection object, and is distributed in both sides of a center of the wavelength band of the one sensor section.

摘要翻译： 公开了一种冲击检测系统，包括：包括反射光的多个传感器部分的光纤，所述反射光的波长带根据通过要检查的被摄体传播的弹性波而振动; 用于将光输入到光纤中的光源; 各自连接到光纤的输出端子的滤光器; 以及算术处理单元，用于检测传感器部分的输出值的影响，其中光纤中的传感器部分的波长带被分布成使得由待检测的冲击引起的振动带彼此不重叠， 与其中一个传感器部分相对应的滤光器的通带分布在由检测对象引起的振动带中，并分布在一个传感器部分的波长带的中心的两侧。

公开(公告)号：US07176448B2

公开(公告)日：2007-02-13

申请号：US10947312

申请日：2004-09-23

申请人： Toshimichi Ogisu ,  Masakazu Shimanuki ,  Nobuo Takeda

发明人： Toshimichi Ogisu ,  Masakazu Shimanuki ,  Nobuo Takeda

IPC分类号： G01J1/04

CPC分类号： G01M11/086 ,  G01N29/11 ,  G01N2291/0258 ,  G01N2291/048

摘要： Damage caused to a structural composite material is detected while reduction in the strength thereof is prevented. A damage detection system 10 for a structural composite material includes a vibration application apparatus 20 including: a sheet body 22; a plurality of piezo elements 21 sprinkled throughout and held by the sheet body 22; and wires 23 for the piezo elements 21 provided to the sheet body 22. The damage detection system 10 also includes: a fiber optic sensor 30 which includes a grating portion 33 in a core portion 32 thereof, the grating portion 33 reflecting light of a predetermined wavelength; a light source to perform light irradiation onto the core portion 32; and a characteristic detection unit 42 to detect a characteristic of the light reflected from the grating portion 33.

摘要翻译： 检测到对结构复合材料造成的损伤，同时防止其强度降低。 用于结构复合材料的损伤检测系统10包括：振动施加装置20，包括：片体22; 由片体22遍布并保持的多个压电元件21; 以及设置在片体22上的压电元件21的导线23。 损伤检测系统10还包括：光纤传感器30，其在其芯部32中包括光栅部分33，光栅部分33反射预定波长的光; 用于对芯部32进行光照射的光源; 以及检测从光栅部33反射的光的特性的特性检测部42。