公开(公告)号：US20120187333A1

公开(公告)日：2012-07-26

申请号：US13420815

申请日：2012-03-15

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

摘要翻译： 公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的助剂，其中助剂包含聚电解质盐，该聚电解质盐包含：（a）重均分子量为2,000〜50,000的线性聚电解质与 接枝型聚电解质，其重均分子量为1,000〜20,000，包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。 包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与 接枝型聚电解质。

公开(公告)号：US08147711B2

公开(公告)日：2012-04-03

申请号：US12086155

申请日：2006-12-08

申请人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： C09K13/00

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.

摘要翻译： 公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。 还公开了包含佐剂的CMP浆料。 助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。 当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化 在外力下的粘度并且在抛光过程中最小化微细纹的产生。 因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。

公开(公告)号：US20090267020A1

公开(公告)日：2009-10-29

申请号：US12086155

申请日：2006-12-08

申请人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： C09K3/14

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.

摘要翻译： 公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。 还公开了包含佐剂的CMP浆料。 助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。 当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化 在外力下的粘度并且在抛光过程中最小化微细纹的产生。 因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。

公开(公告)号：US08652967B2

公开(公告)日：2014-02-18

申请号：US13420815

申请日：2012-03-15

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

摘要翻译： 公开了一种用于同时抛光阳离子电荷材料和阴离子充电材料的佐剂，其中助剂包含聚电解质盐，其包含：（a）重均分子量为2,000〜50,000的线性聚电解质与 接枝型聚电解质，其重均分子量为1,000〜20,000，包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。 包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与 接枝型聚电解质。

公开(公告)号：US08163650B2

公开(公告)日：2012-04-24

申请号：US11634238

申请日：2006-12-06

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms an adsorption layer on the cationically charged material in order to increase polishing selectivity of the anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

摘要翻译： 公开了一种用于同时抛光阳离子电荷材料和阴离子充电材料的佐剂，其在阳离子电荷材料上形成吸附层，以增加阴离子带电材料的抛光选择性，其中助剂包含含有 ：（a）重均分子量为2,000〜50,000的线性聚电解质与重均分子量为1,000〜20,000的接枝型聚电解质的混合物，其包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。 包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与 接枝型聚电解质。

公开(公告)号：US07674716B2

公开(公告)日：2010-03-09

申请号：US11319071

申请日：2005-12-28

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Jeong Jin Hong ,  Young Jun Hong ,  No Ma Kim ,  An Na Lee

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Jeong Jin Hong ,  Young Jun Hong ,  No Ma Kim ,  An Na Lee

IPC分类号： H01L21/302

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms a adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material to cationically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

摘要翻译： 公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的佐剂，其在阳离子充电材料上形成吸附层，以增加阴离子充电材料对阳离子电荷材料的抛光选择性，其中佐剂 包括聚电解质盐，其包含：（a）重均分子量为1,000〜20,000的接枝型聚电解质，其包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。

公开(公告)号：US08062395B2

公开(公告)日：2011-11-22

申请号：US11783742

申请日：2007-04-11

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Young Jun Hong

IPC分类号： B24D3/02 ,  C09C1/68 ,  C09K3/14

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463

摘要： Disclosed is an adjuvant in use for a process of polishing a cationically charged material and an anionically charged material at the same time with abrasive particles, which is absorbed onto the cationically charged material thereby to restrain the cationically charged material from being polished, resulting in raising a polishing selectivity of the anionically charged material, wherein the adjuvant comprises polymer particles having a core-shell structure with a nano-scale particle size smaller than that of the abrasive particles, surfaces of which are anionically charged. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

摘要翻译： 公开了一种用于对阳离子充电材料和阴离子充电材料同时研磨磨料颗粒的方法的辅助剂，其被吸收到阳离子充电材料上，从而限制阳离子充电材料的抛光，从而提高 阴离子充电材料的抛光选择性，其中所述助剂包含具有小于磨料颗粒的纳米级粒径的核 - 壳结构的聚合物颗粒，其表面是阴离子充电的。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。

公开(公告)号：US20070243710A1

公开(公告)日：2007-10-18

申请号：US11783742

申请日：2007-04-11

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Young Jun Hong

IPC分类号： H01L21/461 ,  C09K13/00

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463

摘要： Disclosed is an adjuvant in use for a process of polishing a cationically charged material and an anionically charged material at the same time with abrasive particles, which is absorbed onto the cationically charged material thereby to restrain the cationically charged material from being polished, resulting in raising a polishing selectivity of the anionically charged material, wherein the adjuvant comprises polymer particles having a core-shell structure with a nano-scale particle size smaller than that of the abrasive particles, surfaces of which are anionically charged. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

摘要翻译： 公开了一种用于对阳离子充电材料和阴离子充电材料同时研磨磨料颗粒的方法的辅助剂，其被吸收到阳离子充电材料上，从而限制阳离子充电材料的抛光，从而提高 阴离子充电材料的抛光选择性，其中所述助剂包含具有小于磨料颗粒的纳米级粒度的核 - 壳结构的聚合物颗粒，其表面是阴离子充电的。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。

公开(公告)号：US20060141741A1

公开(公告)日：2006-06-29

申请号：US11319071

申请日：2005-12-28

申请人： Gi Yi ,  Jong Kim ,  Jung Hee Lee ,  Jeong Jin Hong ,  Young Jun Hong ,  No Ma Kim ,  An Na Lee

发明人： Gi Yi ,  Jong Kim ,  Jung Hee Lee ,  Jeong Jin Hong ,  Young Jun Hong ,  No Ma Kim ,  An Na Lee

IPC分类号： H01L21/76

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms a adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material to cationically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

摘要翻译： 公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的佐剂，其在阳离子充电材料上形成吸附层，以增加阴离子充电材料对阳离子电荷材料的抛光选择性，其中佐剂 包括聚电解质盐，其包含：（a）重均分子量为1,000〜20,000的接枝型聚电解质，并且包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。

公开(公告)号：US09556341B2

公开(公告)日：2017-01-31

申请号：US13496859

申请日：2010-09-17

申请人： Eun Jeong Lee ,  Young Jun Hong ,  Hyeon Choi ,  Taek Ho Yang

发明人： Eun Jeong Lee ,  Young Jun Hong ,  Hyeon Choi ,  Taek Ho Yang

IPC分类号： C09D5/16 ,  C09D5/00 ,  C09D7/12 ,  C12N9/20 ,  B05D1/18 ,  C08L89/00

CPC分类号： C09D5/1637 ,  B05D1/18 ,  C08L89/00 ,  C09D5/00 ,  C09D5/006 ,  C09D5/1687 ,  C09D7/63 ,  C09D7/65 ,  C12N9/20 ,  C12Y301/01003 ,  Y10T428/249954 ,  Y10T428/249987

摘要： Provided are a porous structure for forming anti-fingerprint coating capable of providing a self-cleaning function to a surface of a substrate, a method of forming anti-fingerprint coating using the same, an anti-fingerprint coated substrate prepared by the same method, and a product including the same. When the porous structure including a lipolytic enzyme is formed on the surface of the substrate, contaminants decomposed by an enzyme are absorbed into a pore, and thus anti-fingerprint coating may be more effectively performed to remove detectable contamination from a surface of the substrate. As a result, contamination by fingerprints on the surface of a display device, the appearance of an electronic device, or building materials can be effectively reduced.

摘要翻译： 提供一种用于形成能够对基材表面提供自清洁功能的抗指纹涂层的多孔结构，使用其形成抗指纹涂层的方法，通过相同方法制备的防指纹涂层基材， 和包括其的产品。 当在基材的表面上形成包含脂肪分解酶的多孔结构时，被酶分解的污染物被吸收到孔中，因此可以更有效地进行防指纹涂层以从基底表面除去可检测的污染物。 结果，可以有效地减少显示装置的表面上的指纹污染，电子装置的外观或建筑材料的污染。