公开(公告)号：US07179537B2

公开(公告)日：2007-02-20

申请号：US10278992

申请日：2002-10-24

申请人： Jung-Ho Lee ,  Jung-Sik Choi ,  Hong-Ki Kim ,  Dong-Jun Lee ,  Dae-Won Kang ,  Sang-Mun Chon

发明人： Jung-Ho Lee ,  Jung-Sik Choi ,  Hong-Ki Kim ,  Dong-Jun Lee ,  Dae-Won Kang ,  Sang-Mun Chon

IPC分类号： B32B27/06 ,  H01L21/31 ,  C08L83/04

CPC分类号： H01L21/76229 ,  C08G77/62 ,  C09D183/16 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31051 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/823481 ,  Y10T428/31663

摘要： A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula —(SiH2NH)n— wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.

摘要翻译： 公开了旋涂玻璃（SOG）组合物和利用SOG组合物形成氧化硅层的方法。 该方法包括在具有表面不连续性的半导体衬底上涂覆，含有具有下式化合物的全氢聚硅氮烷的SOG组合物 - （SiH 2 NH 3）n - 其中n表示 正整数，重均分子量在约4,000至8,000范围内，分子量分散在约3.0至4.0的范围内，以形成平面SOG层。 通过固化SOG层将SOG层转化为具有平坦表面的氧化硅层。 还公开了通过该方法制造的半导体器件。

公开(公告)号：US06706646B1

公开(公告)日：2004-03-16

申请号：US09686624

申请日：2000-10-12

申请人： Jung-Ho Lee ,  Jung-Sik Choi ,  Hong-Ki Kim ,  Dong-Jun Lee ,  Dae-Won Kang ,  Sang-Mun Chon

发明人： Jung-Ho Lee ,  Jung-Sik Choi ,  Hong-Ki Kim ,  Dong-Jun Lee ,  Dae-Won Kang ,  Sang-Mun Chon

IPC分类号： H01L2131

CPC分类号： H01L21/76229 ,  C08G77/62 ,  C09D183/16 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31051 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/823481 ,  Y10T428/31663

摘要： A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula —(SiH2NH)n— wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.

摘要翻译： 公开了旋涂玻璃（SOG）组合物和利用SOG组合物形成氧化硅层的方法。 该方法包括在具有表面不连续性的半导体衬底上涂覆，含有具有式 - （SiH 2 NH）n - 的化合物的全氢聚硅氮烷的SOG组合物，其中n表示正整数，重均分子量在约4,000至8,000范围内 ，分子量分散在约3.0〜4.0的范围内，形成平面状的SOG层。 通过固化SOG层将SOG层转化为具有平坦表面的氧化硅层。 还公开了通过该方法制造的半导体器件。

公开(公告)号：US06479405B2

公开(公告)日：2002-11-12

申请号：US09985615

申请日：2001-11-05

申请人： Jung-Ho Lee ,  Dong-Jun Lee ,  Dae-Won Kang ,  Sung-Taek Moon ,  Gi-Hag Lee ,  Jung-Sik Choi

发明人： Jung-Ho Lee ,  Dong-Jun Lee ,  Dae-Won Kang ,  Sung-Taek Moon ,  Gi-Hag Lee ,  Jung-Sik Choi

IPC分类号： H01L2131

CPC分类号： C23C18/1283 ,  C08G77/62 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1279 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31051 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/823481 ,  H01L27/105 ,  H01L27/11521

摘要： A method of forming a silicon oxide layer of a semiconductor device comprising coating a spin-on glass (SOG) composition including perhydropolysilazane having a compound of the formula (SiH2NH2)n where n represents a positive integer on a semiconductor substrate having a surface discontinuity, to form a planar SOG layer; and forming a silicon oxide layer with a planar surface by implementing a first heat treatment to convert an SOG solution into oxide and a second heat treatment to densify thus obtained oxide. The silicon oxide layer of the present invention can bury a gap between gaps of VLSI having a high aspect ratio and gives the same characteristics as a CVD oxide layer. Further, the oxidation of silicon in the active region is restrained in the present invention to secure dimension stability. Also disclosed is a semiconductor device made by the method.

摘要翻译： 一种形成半导体器件的氧化硅层的方法，包括在具有表面不连续性的半导体衬底上涂覆包含具有式（SiH 2 NH 2）n的化合物的全氢聚硅氮烷的旋涂玻璃（SOG）组合物，其中n表示正整数， 以形成平面SOG层; 以及通过实施第一热处理以将SOG溶液转化为氧化物并进行第二热处理以致密化由此获得的氧化物，形成具有平坦表面的氧化硅层。 本发明的氧化硅层可以在具有高纵横比的VLSI的间隙之间埋设间隙，并赋予与CVD氧化物层相同的特性。 此外，本发明中限制了活性区域中硅的氧化以确保尺寸稳定性。 还公开了通过该方法制造的半导体器件。

公开(公告)号：US20060216942A1

公开(公告)日：2006-09-28

申请号：US11373425

申请日：2006-03-10

申请人： Gi-Jung Kim ,  Sang-Mun Chon ,  Young-Nam Kim ,  Dae-Won Kang ,  Young-Sam Lim

发明人： Gi-Jung Kim ,  Sang-Mun Chon ,  Young-Nam Kim ,  Dae-Won Kang ,  Young-Sam Lim

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67313 ,  H01L21/67326

摘要： A wafer carrier is provided. The wafer carrier includes a storage holding member for storing a plurality of wafers and includes a plurality of open portions. The wafer carrier further includes a front fixing plate and a rear fixing plate disposed at a front and a rear end of the storage holding member, respectively. The front and rear fixing plates each face a side of at least one of the plurality of wafers. Moreover, left and right edges of the plurality of wafers stored in the storage holding member are exposed by the plurality of open portions.

摘要翻译： 提供晶片载体。 晶片载体包括用于存储多个晶片的存储保持构件，并且包括多个开放部分。 晶片载体还包括分别设置在存储保持构件的前端和后端的前固定板和后固定板。 前固定板和后固定板各自面对多个晶片中的至少一个的一侧。 此外，存储在存储保持部件中的多个晶片的左右边缘被多个开口部露出。