公开(公告)号：US07179537B2

公开(公告)日：2007-02-20

申请号：US10278992

申请日：2002-10-24

申请人： Jung-Ho Lee ,  Jung-Sik Choi ,  Hong-Ki Kim ,  Dong-Jun Lee ,  Dae-Won Kang ,  Sang-Mun Chon

发明人： Jung-Ho Lee ,  Jung-Sik Choi ,  Hong-Ki Kim ,  Dong-Jun Lee ,  Dae-Won Kang ,  Sang-Mun Chon

IPC分类号： B32B27/06 ,  H01L21/31 ,  C08L83/04

CPC分类号： H01L21/76229 ,  C08G77/62 ,  C09D183/16 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31051 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/823481 ,  Y10T428/31663

摘要： A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula —(SiH2NH)n— wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.

摘要翻译： 公开了旋涂玻璃（SOG）组合物和利用SOG组合物形成氧化硅层的方法。 该方法包括在具有表面不连续性的半导体衬底上涂覆，含有具有下式化合物的全氢聚硅氮烷的SOG组合物 - （SiH 2 NH 3）n - 其中n表示 正整数，重均分子量在约4,000至8,000范围内，分子量分散在约3.0至4.0的范围内，以形成平面SOG层。 通过固化SOG层将SOG层转化为具有平坦表面的氧化硅层。 还公开了通过该方法制造的半导体器件。

公开(公告)号：US06706646B1

公开(公告)日：2004-03-16

申请号：US09686624

申请日：2000-10-12

申请人： Jung-Ho Lee ,  Jung-Sik Choi ,  Hong-Ki Kim ,  Dong-Jun Lee ,  Dae-Won Kang ,  Sang-Mun Chon

发明人： Jung-Ho Lee ,  Jung-Sik Choi ,  Hong-Ki Kim ,  Dong-Jun Lee ,  Dae-Won Kang ,  Sang-Mun Chon

IPC分类号： H01L2131

CPC分类号： H01L21/76229 ,  C08G77/62 ,  C09D183/16 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31051 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/823481 ,  Y10T428/31663

摘要： A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula —(SiH2NH)n— wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.

摘要翻译： 公开了旋涂玻璃（SOG）组合物和利用SOG组合物形成氧化硅层的方法。 该方法包括在具有表面不连续性的半导体衬底上涂覆，含有具有式 - （SiH 2 NH）n - 的化合物的全氢聚硅氮烷的SOG组合物，其中n表示正整数，重均分子量在约4,000至8,000范围内 ，分子量分散在约3.0〜4.0的范围内，形成平面状的SOG层。 通过固化SOG层将SOG层转化为具有平坦表面的氧化硅层。 还公开了通过该方法制造的半导体器件。

公开(公告)号：US08154097B2

公开(公告)日：2012-04-10

申请号：US12266856

申请日：2008-11-07

申请人： Hong-Ki Kim ,  Duck-Hyung Lee ,  Hyun-Pil Noh

发明人： Hong-Ki Kim ,  Duck-Hyung Lee ,  Hyun-Pil Noh

IPC分类号： H01L31/09

CPC分类号： H01L27/14632 ,  H01L27/14636 ,  H01L27/14685

摘要： An image sensor and a method of manufacturing the same are provided. The image sensor includes a substrate having a sensor array area and a peripheral circuit area a first insulating film structure formed on the peripheral circuit area and including a plurality of first multi-layer wiring lines and a second insulating film structure formed on the sensor array area and including a plurality of second multi-layer wiring lines. The uppermost-layer wiring line of the plurality of first multi-layer wiring lines is higher than that of the uppermost-layer wiring line of the plurality of second multi-layer wiring lines. The first insulating film structure includes an isotropic etch-stop layer, and the second insulating film structure does not include the isotropic etch-stop layer.

摘要翻译： 提供了图像传感器及其制造方法。 图像传感器包括具有传感器阵列区域的基板和形成在外围电路区域上的第一绝缘膜结构的外围电路区域，并且包括多个第一多层布线和形成在传感器阵列区域上的第二绝缘膜结构 并且包括多个第二多层布线。 多个第一多层布线的最上层布线比多个第二多层布线的最上层布线高。 第一绝缘膜结构包括各向同性蚀刻停止层，第二绝缘膜结构不包括各向同性蚀刻停止层。

公开(公告)号：US6064554A

公开(公告)日：2000-05-16

申请号：US066538

申请日：1998-04-27

申请人： Hong-Ki Kim

发明人： Hong-Ki Kim

IPC分类号： G06F1/26 ,  H02H3/00

CPC分类号： G06F1/266

摘要： An overcurrent protection circuit for a universal serial bus (USB) hub unit is comprised of a USB hub controller for controlling the operation of the USB hub unit, a plurality of power switches for switching operating voltages under the control of the USB hub controller respectively, a plurality of power output ports for transferring output voltages from the power switches to the subsequent USB hub units or peripheral devices respectively connected thereto, a plurality of overcurrent detectors respectively connected between the power switches and the power output ports for generating overcurrent detection signals when overcurrent flows to the subsequent USB hub units or peripheral devices, and a plurality of signal transfer/power interruption controllers each for transferring the overcurrent detection signal from a corresponding one of the overcurrent detectors to an input terminal of the USB hub controller and controlling a corresponding one of the power switches in response to a power interruption signal from an output terminal of the USB hub controller to interrupt the supply of power to a corresponding one of the power output ports. According to the invention, only one input terminal and one output terminal of the USB hub controller are used to prevent overcurrent from flowing to the subsequent USB hub units and/or peripheral devices.

摘要翻译： 用于通用串行总线（USB）集线器单元的过电流保护电路包括用于控制USB集线器单元操作的USB集线器控制器，分别在USB集线器控制器的控制下切换工作电压的多个电源开关， 多个电力输出端口，用于将输出电压从电力开关转移到分别连接到其上的USB集线器单元或外围设备;分别连接在电源开关和电源输出端口之间的多个过电流检测器，用于当过电流时产生过电流检测信号 流向随后的USB集线器单元或外围设备，以及多个信号传送/电源中断控制器，每个用于将过电流检测信号从相应的一个过电流检测器传送到USB集线器控制器的输入端，并控制相应的一个 的功率开关响应于电源 r中断信号从USB集线器控制器的输出端子中断向相应的一个电力输出端口供电。 根据本发明，仅使用USB集线器控制器的一个输入端子和一个输出端子来防止过电流流向后续的USB集线器单元和/或外围设备。

公开(公告)号：US20090098261A1

公开(公告)日：2009-04-16

申请号：US12028350

申请日：2008-02-08

申请人： Hyun-Jun Park ,  Sung-Wook Han ,  Dong-Yun Lee ,  Hong-Ki Kim ,  Hyun-Chul Jeong ,  Hyun-Ho Park

发明人： Hyun-Jun Park ,  Sung-Wook Han ,  Dong-Yun Lee ,  Hong-Ki Kim ,  Hyun-Chul Jeong ,  Hyun-Ho Park

IPC分类号： A23P1/02 ,  A23J1/12

CPC分类号： A23J1/12 ,  C07K1/145 ,  C07K1/30 ,  C07K1/36

摘要： The present invention relates to a preparation method of protein extracts from rice bran which is comprising a process of pre-treating rice bran; producing de-fatted rice bran by removing fat from the pellet; a process of extracting protein from the de-fatted rice bran, generating protein solution; and a process of precipitating protein from the protein solution to obtain final protein extracts from rice bran. The method of the present invention makes it possible to obtain lipid from rice bran, which has been wasted and used only as feed or compost due to fast rancidity and low stability, and to ultimately develop proteineous materials of high quality, non-GMO and no-allergy by extracting protein from the rice bran. In addition, the present invention provides a method of recycling rice bran, which is wasted as a by-product, by adding values to the rice bran. And simultaneously the present invention provides a possibility of developing new product which can meet the customers' needs for safety in proteineous materials.

摘要翻译： 本发明涉及一种米糠蛋白提取物的制备方法，其包括预处理米糠的方法; 通过从颗粒中除去脂肪来生产脱脂米糠; 从脱脂米糠提取蛋白质的过程，产生蛋白质溶液; 以及从蛋白质溶液中沉淀蛋白质以从米糠获得最终蛋白质提取物的过程。 本发明的方法使得可以从米糠获得脂肪，其由于快速酸败和低稳定性而被浪费和仅用作饲料或堆肥，并且最终开发出高质量，非转基因和无转基因的蛋白质材料 通过从米糠中提取蛋白质来实现。 此外，本发明提供一种通过向米糠添加价值来回收作为副产物而被浪费的米糠的方法。 同时，本发明提供开发新产品的可能性，其可以满足客户对蛋白质材料安全性的需求。

公开(公告)号：US07018903B2

公开(公告)日：2006-03-28

申请号：US10676336

申请日：2003-10-01

申请人： Hong-Ki Kim ,  Jae-Hee Oh ,  Kwan-Young Youn

发明人： Hong-Ki Kim ,  Jae-Hee Oh ,  Kwan-Young Youn

IPC分类号： H01L21/20 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L28/90 ,  H01L21/31637 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/57 ,  H01L28/65

摘要： A method of forming a semiconductor device comprising: sequentially forming a supporting layer and a sacrificial layer over a semiconductor substrate; forming an opening by patterning the sacrificial layer and the supporting layer; forming a bottom electrode covering the inner wall and the bottom of the opening; removing the sacrificial layer by a wet etch process; and forming a dielectric layer and an upper electrode on the bottom electrode and the supporting layer, wherein the sacrificial layer is formed of a material having a faster wet etch rate than the supporting layer.

摘要翻译： 一种形成半导体器件的方法，包括：在半导体衬底上顺序形成支撑层和牺牲层; 通过图案化牺牲层和支撑层形成开口; 形成覆盖所述开口的内壁和底部的底部电极; 通过湿蚀刻工艺去除牺牲层; 以及在所述底部电极和所述支撑层上形成介电层和上部电极，其中所述牺牲层由比所述支撑层具有更快的湿蚀刻速率的材料形成。

公开(公告)号：US06752725B2

公开(公告)日：2004-06-22

申请号：US10394897

申请日：2003-03-21

申请人： Hong-Ki Kim

发明人： Hong-Ki Kim

IPC分类号： A63B6936

CPC分类号： A63B37/0004 ,  A63B37/0022 ,  A63B43/008 ,  A63B45/02

摘要： A golf ball having direction-sighting indications, with which a golfer can easily sight a direction for the golf ball to fly when he/she strikes the ball with one of golf clubs, and a mold for manufacturing such golf balls. The golf ball according to the present invention has a first indicating line having a plurality of indicating holes distinguishable in shape and dimension from normal dimples formed on an outer surface of the golf ball. The first indicating line establishes a straight line extending along an equator on the surface of the golf ball to form a first direction indicating line, on which a starting point and an ending point are identical. A second indicating line, having a plurality of indicating holes identical in shape and dimension to those of the first indicating line, is formed on the surface of the golf ball. The second indicating line establishes a second direction indicating line so that two crossing points with the first indicating line are formed and, at the same time, a first axis is formed through the two crossing points and a center of the golf ball.

摘要翻译： 具有方向瞄准指示的高尔夫球，高尔夫球手可以很容易地看到高尔夫球与高尔夫球杆之一撞击球时飞行的方向，以及用于制造这种高尔夫球的模具。 根据本发明的高尔夫球具有第一指示线，其具有多个指示孔，其形状和尺寸与形成在高尔夫球的外表面上的普通凹坑区分开。 第一指示线建立沿着高尔夫球表面上的赤道延伸的直线，以形成第一方向指示线，起始点和终点相同。 在高尔夫球的表面上形成有具有与第一指示线相同形状和尺寸的多个指示孔的第二指示线。 第二指示线建立第二方向指示线，使得形成具有第一指示线的两个交叉点，并且同时通过两个交叉点和高尔夫球的中心形成第一轴线。

公开(公告)号：US6015748A

公开(公告)日：2000-01-18

申请号：US304355

申请日：1999-05-04

申请人： Hong-Ki Kim ,  Duck-Hyung Lee ,  Chang-Sik Choi

发明人： Hong-Ki Kim ,  Duck-Hyung Lee ,  Chang-Sik Choi

IPC分类号： H01L27/108 ,  H01L21/8239 ,  H01L27/105 ,  H01L21/3205

CPC分类号： H01L27/105 ,  H01L27/1052

摘要： Integrated circuit memory devices are fabricated by fabricating an array of memory cell field effect transistors and peripheral circuit field effect transistors that are spaced-apart from the memory cell transistors, in an integrated circuit substrate. The memory cell transistors include spaced-apart memory cell transistor source and drain regions and a memory cell gate therebetween. The peripheral circuit transistors include spaced-apart peripheral circuit transistor source and drain regions and a peripheral circuit gate therebetween. A silicide blocking layer is formed on the memory cell transistor source and drain regions. The integrated circuit substrate is silicided to thereby form a silicide layer on the memory cell transistor gates, on the peripheral circuit source and drain regions and on the peripheral circuit gates, such that the memory cell transistor source and drain regions are free of the silicide layer thereon. Accordingly, low contact resistance silicide regions may be selectively provided in memory cells without degrading the leakage characteristics thereof.

摘要翻译： 集成电路存储器件通过在集成电路衬底中制造与存储单元晶体管间隔开的存储单元场效应晶体管阵列和外围电路场效应晶体管来制造。 存储单元晶体管包括间隔开的存储单元晶体管源极和漏极区以及它们之间的存储单元栅极。 外围电路晶体管包括间隔开的外围电路晶体管源极和漏极区域以及其间的外围电路栅极。 在存储单元晶体管源极和漏极区域上形成硅化物阻挡层。 集成电路基板被硅化，从而在外围电路源极和漏极区域以及外围电路栅极上的存储单元晶体管栅极上形成硅化物层，使得存储单元晶体管源极和漏极区域不含硅化物层 上。 因此，可以在存储单元中选择性地提供低接触电阻硅化物区域，而不会降低其泄漏特性。

公开(公告)号：US08316312B2

公开(公告)日：2012-11-20

申请号：US10675969

申请日：2003-10-02

申请人： Hong-Ki Kim ,  Seok-Hwa Jeong ,  Ju-Ho Yun

发明人： Hong-Ki Kim ,  Seok-Hwa Jeong ,  Ju-Ho Yun

IPC分类号： G06F3/048

CPC分类号： G06F3/0481 ,  G06F3/0484

摘要： A method, display system, computer software product for controlling an icon appearance are disclosed. A display controller of the display system displays an icon control window on a display screen of the display system for changing an icon appearance of the display system conveniently. The control window includes at least one sample icon for a user's preview, and the sample icon's appearance is automatically updated upon receiving inputs for a new icon appearance from a user. When the user is satisfied with the updated sample icon's appearance and enters an execution command, the display controller finally changes the icon appearance of the display system by changing corresponding display properties according to the user inputs.

摘要翻译： 公开了一种用于控制图标外观的方法，显示系统，计算机软件产品。 显示系统的显示控制器在显示系统的显示屏幕上显示图标控制窗口，用于方便地改变显示系统的图标外观。 控制窗口包括至少一个用于用户预览的样本图标，并且当从用户接收到新图标外观的输入时，样本图标的外观被自动更新。 当用户对更新的样本图标的外观感到满意并输入执行命令时，显示控制器最终根据用户输入改变对应的显示属性来改变显示系统的图标外观。

公开(公告)号：US06222746B1

公开(公告)日：2001-04-24

申请号：US09247280

申请日：1999-02-09

申请人： Hong-Ki Kim

发明人： Hong-Ki Kim

IPC分类号： H02M542

CPC分类号： H02M1/4225 ,  Y02B70/126

摘要： A power supply device for supplying power to an electronic apparatus with a power saving mode includes a rectifier circuit for converting an AC input voltage Vin to a DC voltage, a boost circuit for boosting the DC voltage to a prescribed level, a power factor correction (PFC) circuit for correcting the power factor of the output voltage of the boost circuit according to a feedback voltage from the output of the boost circuit, and a disable circuit for disabling the power factor correction (PFC) circuit in a power saving mode, whereby the power consumption is prevented for a switching operation of the power factor correction (PFC) circuit in the power saving mode.

摘要翻译： 用于向具有省电模式的电子设备供电的电源装置包括用于将AC输入电压Vin转换为DC电压的整流电路，用于将DC电压升压到规定电平的升压电路，功率因数校正（ PFC）电路，用于根据来自升压电路的输出的反馈电压来校正升压电路的输出电压的功率因数;以及禁止电路，用于在功率节省模式下禁用功率因数校正（PFC）电路，由此 在功率节省模式下，功率因数校正（PFC）电路的切换操作阻止了功耗。