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    Top coating composition for photoresist and method of forming photoresist pattern using same
    2.
    发明申请
    Top coating composition for photoresist and method of forming photoresist pattern using same 有权
    用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法

    公开(公告)号：US20060111550A1

    公开(公告)日：2006-05-25

    申请号：US11281775

    申请日：2005-11-17

    申请人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

    发明人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

    IPC分类号： C08F6/00

    CPC分类号： G03F7/11 ,  C08F220/06 ,  C08F220/18 ,  G03F7/2041 ,  Y10S430/146 ,  Y10S430/162

    摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.

    摘要翻译： 提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。 顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯 ，或其组合; 并且m，n和q是其中0.03 <= m /（m + n + q）<=0.97,0.03≤n/（m + n + q）<= 0.97,0 <= q /（m + n + q）<= 0.5; 并且其中所述溶剂包括去离子水。

    Top coating composition for photoresist and method of forming photoresist pattern using same
    3.
    发明授权
    Top coating composition for photoresist and method of forming photoresist pattern using same 有权
    用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法

    公开(公告)号：US07384730B2

    公开(公告)日：2008-06-10

    申请号：US11281775

    申请日：2005-11-17

    申请人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

    发明人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

    IPC分类号： G03F7/38 ,  H01L21/027 ,  G03F7/11

    CPC分类号： G03F7/11 ,  C08F220/06 ,  C08F220/18 ,  G03F7/2041 ,  Y10S430/146 ,  Y10S430/162

    摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.

    摘要翻译： 提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。 顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯 ，或其组合; 并且m，n和q是整数，其中<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= m /（m + n + q）<= 0.97， in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= n /（m + n + q）<= 0.97，<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead” α> 0 <= q /（m + n + q）<= 0.5; <？in-line-formula description =“In-line Formulas”end =“tail”？>，其中溶剂包括去离子水。

    Top coating composition for photoresist and method of forming photoresist pattern using the same
    4.
    发明申请
    Top coating composition for photoresist and method of forming photoresist pattern using the same 审中-公开
    用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法

    公开(公告)号：US20060275697A1

    公开(公告)日：2006-12-07

    申请号：US11364707

    申请日：2006-02-27

    申请人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Hyun-Woo Kim ,  Sang-Gyun Woo ,  Jin-Young Yoon ,  Jung-Hwan Hah

    发明人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Hyun-Woo Kim ,  Sang-Gyun Woo ,  Jin-Young Yoon ,  Jung-Hwan Hah

    IPC分类号： G03C1/00

    CPC分类号： G03F7/11 ,  G03F7/2041

    摘要： Provided are a top coating composition for a photoresist which can be used in immersion lithography, and a method of forming a photoresist pattern using the same. The top coating composition includes: a polymer including at least three different structural repeating units including a first repeating unit comprising a carboxy group substituted by an alkyl protecting group or an acid-labile group, a second repeating unit comprising an acid group, and a third repeating unit comprising a polar group, and an organic solvent comprising an alcohol.

    摘要翻译： 提供了可用于浸没式光刻的光致抗蚀剂的顶涂层组合物，以及使用其形成光致抗蚀剂图案的方法。 顶部涂料组合物包括：包含至少三种不同结构重复单元的聚合物，其包括第一重复单元，其包含被烷基保护基团或酸不稳定基团取代的羧基，第二重复单元包含酸基，和第三重复单元 包含极性基团的重复单元和包含醇的有机溶剂。

    Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device
    5.
    发明申请
    Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device 失效
    用于半导体器件制造的掩模图案，其形成方法以及制造精细图案化的半导体器件的方法

    公开(公告)号：US20060046205A1

    公开(公告)日：2006-03-02

    申请号：US11186913

    申请日：2005-07-21

    申请人： Jung-Hwan Hah ,  Jin Hong ,  Hyun-Woo Kim ,  Hata Mitsuhiro ,  Kolake Subramanya ,  Sang-Gyun Woo

    发明人： Jung-Hwan Hah ,  Jin Hong ,  Hyun-Woo Kim ,  Hata Mitsuhiro ,  Kolake Subramanya ,  Sang-Gyun Woo

    IPC分类号： G03F7/00

    CPC分类号： G03F7/40 ,  B82Y30/00 ,  G03F7/0752 ,  G03F7/165 ,  H01L21/0274

    摘要： Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.

    摘要翻译： 提供了包括含硅自组装分子层的掩模图案，其形成方法和制造半导体器件的方法。 掩模图案包括形成在半导体衬底上的抗蚀剂图案和形成在抗蚀剂图案上的自组装分子层。 自组装分子层具有通过溶胶 - 凝胶反应形成的二氧化硅网络。 为了形成掩模图案，首先，在覆盖基板的下层上形成抗蚀剂图案，使底层暴露于第一宽度。 然后，仅在抗蚀剂图案的表面上选择性地形成自组装分子层，以使底层暴露于小于第一宽度的第二宽度。 通过使用抗蚀剂图案和自组装分子层作为蚀刻掩模来蚀刻底层以获得精细图案。

    Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device
    10.
    发明授权
    Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device 失效
    用于半导体器件制造的掩模图案，其形成方法以及制造精细图案化的半导体器件的方法

    公开(公告)号：US08241837B2

    公开(公告)日：2012-08-14

    申请号：US12946964

    申请日：2010-11-16

    申请人： Jung-Hwan Hah ,  Jin Hong ,  Hyun-Woo Kim ,  Hata Mitsuhiro ,  Kolake Mayya Subramanya ,  Sang-Gyun Woo

    发明人： Jung-Hwan Hah ,  Jin Hong ,  Hyun-Woo Kim ,  Hata Mitsuhiro ,  Kolake Mayya Subramanya ,  Sang-Gyun Woo

    IPC分类号： G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/40

    CPC分类号： G03F7/40 ,  B82Y30/00 ,  G03F7/0752 ,  G03F7/165 ,  H01L21/0274

    摘要： Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.

    摘要翻译： 提供了包括含硅自组装分子层的掩模图案，其形成方法和制造半导体器件的方法。 掩模图案包括形成在半导体衬底上的抗蚀剂图案和形成在抗蚀剂图案上的自组装分子层。 自组装分子层具有通过溶胶 - 凝胶反应形成的二氧化硅网络。 为了形成掩模图案，首先，在覆盖基板的下层上形成抗蚀剂图案，使底层暴露于第一宽度。 然后，仅在抗蚀剂图案的表面上选择性地形成自组装分子层，以使底层暴露于小于第一宽度的第二宽度。 通过使用抗蚀剂图案和自组装分子层作为蚀刻掩模来蚀刻底层以获得精细图案。