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    Semiconductor device with improved immunity to contact and conductor defects
    5.
    发明授权
    Semiconductor device with improved immunity to contact and conductor defects 失效
    具有改善的抗接触和导体缺陷的半导体器件

    公开(公告)号：US5481137A

    公开(公告)日：1996-01-02

    申请号：US246375

    申请日：1994-05-18

    申请人： Shigeru Harada ,  Hisao Masuda ,  Reiji Tamaki

    发明人： Shigeru Harada ,  Hisao Masuda ,  Reiji Tamaki

    IPC分类号： H01L23/532 ,  H01L23/48 ,  H01L29/34 ,  H01L29/46 ,  H01L29/62

    CPC分类号： H01L23/53219 ,  H01L23/532 ,  H01L2924/0002

    摘要： In a semiconductor device, an impurity diffused layer serving as an active region is formed in a predetermined region of the surface of a semiconductor substrate of silicon, an underlayer insulating film is formed on the semiconductor substrate for the purpose of protecting and stabilizing the surface of the semiconductor substrate, and an interconnection electrically connected to the impurity diffused layer through a contact hole and formed on an Al-Si-Sn alloy, an Al-Si-Sb alloy or alloys having Ti added to the respective alloys, so that occurrence of an alloy pit and a silicon nodule is prevented. In addition, a completed protective film is formed on the interconnection and the underlayer insulating film and an aperture in a bonding pad region is formed in a predetermined region of the completed protective film, so that the interconnection and the bonding pad are electrically connected to each other. The proportion of silicon and other materials in the alloy are controlled to simultaneously avoid alloy pit and silicon nodule defects both at the contact hole and throughout the alloy conductor.

    摘要翻译： 在半导体器件中，在硅的半导体衬底的表面的预定区域中形成用作有源区的杂质扩散层，为了保护和稳定表面的目的，在半导体衬底上形成下层绝缘膜 半导体衬底以及通过接触孔与杂质扩散层电连接并且在Al-Si-Sn合金，Al-Si-Sb合金或其合金上添加有Ti的合金形成的互连，从而发生 防止了合金凹坑和硅结节。 此外，在互连和下层绝缘膜上形成完整的保护膜，并且在完成的保护膜的预定区域中形成焊盘区域中的孔，使得互连和焊盘与每个 其他。 控制合金中硅和其他材料的比例，以同时避免接触孔和整个合金导体中的合金凹坑和硅结节缺陷。

    Semiconductor device with improved immunity to contact and conductor defects
    7.
    发明授权
    Semiconductor device with improved immunity to contact and conductor defects 失效
    具有改善的抗接触和导体缺陷的半导体器件

    公开(公告)号：US5260604A

    公开(公告)日：1993-11-09

    申请号：US508507

    申请日：1990-04-12

    申请人： Shigeru Harada ,  Hisao Masuda ,  Reiji Tamaki

    发明人： Shigeru Harada ,  Hisao Masuda ,  Reiji Tamaki

    IPC分类号： H01L23/532 ,  H02L23/48

    CPC分类号： H01L23/53219 ,  H01L23/532 ,  H01L2924/0002

    摘要： In a semiconductor device, an impurity diffused layer serving as an active region is formed in a predetermined region of the surface of a semiconductor substrate of silicon, an underlayer insulating film is formed on the semiconductor substrate for the purpose of protecting and stabilizing the surface of the semiconductor substrate, and an interconnection electrically connected to the impurity diffused layer through a contact hole and formed on an Al-Si-Sn alloy, an Al-Si-Sb alloy or alloys having Ti added to the respective alloys, so that occurrence of an alloy pit and a silicon nodule is prevented. In addition, a completed protective film is formed on the interconnection and the underlayer insulating film and an aperture in a bonding pad region is formed in a predetermined region of the completed protective film, so that the interconnection and the bonding pad are electrically connected to each other. The proportion of silicon and other materials in the alloy are controlled to simultaneously avoid alloy pit and silicon nodule defects both at the contact hole and throughout the alloy conductor.

    摘要翻译： 在半导体器件中，在硅的半导体衬底的表面的预定区域中形成用作有源区的杂质扩散层，为了保护和稳定表面的目的，在半导体衬底上形成下层绝缘膜 半导体衬底以及通过接触孔与杂质扩散层电连接并且在Al-Si-Sn合金，Al-Si-Sb合金或其合金上添加有Ti的合金形成的互连，从而发生 防止了合金凹坑和硅结节。 此外，在互连和下层绝缘膜上形成完整的保护膜，并且在完成的保护膜的预定区域中形成焊盘区域中的孔，使得互连和焊盘与每个 其他。 控制合金中硅和其他材料的比例，以同时避免接触孔和整个合金导体中的合金凹坑和硅结节缺陷。

    Interconnection structure of semiconductor integrated circuit device and manufacturing method thererfor
    8.
    发明授权
    Interconnection structure of semiconductor integrated circuit device and manufacturing method thererfor 失效
    半导体集成电路器件的互连结构及其制造方法

    公开(公告)号：US5488014A

    公开(公告)日：1996-01-30

    申请号：US213417

    申请日：1994-03-15

    申请人： Shigeru Harada ,  Junichi Arima ,  Noriaki Fujiki

    发明人： Shigeru Harada ,  Junichi Arima ,  Noriaki Fujiki

    IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44 ,  H01L21/48

    CPC分类号： H01L23/53223 ,  H01L23/5226 ,  H01L2924/0002

    摘要： A surface of a first aluminum interconnection layer in a connection hole is exposed to a plasma of oxygen or fluorine-containing gas during the forming step of the connection hole. In order to remove the thin deterioration layer which forms as a result, sputter etching is effected by an argon ion. There are residual particles of the oxide and fluoride of aluminum on the surface of the first aluminum interconnection layer. A titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum layer through the through hole. A titanium compound layer is formed on the titanium layer. A second aluminum layer is formed on the titanium compound layer. A heat treatment is effected to decompose the residual particles and to form an intermetallic compound (TiAl.sub.3).

    摘要翻译： 在连接孔的形成步骤期间，连接孔中的第一铝互连层的表面暴露于氧或含氟气体的等离子体。 为了除去形成的薄劣化层，通过氩离子进行溅射蚀刻。 在第一铝互连层的表面上存在铝的氧化物和氟化物的残留颗粒。 在绝缘层上形成钛层，以通过通孔与第一铝层的表面接触。 在钛层上形成钛化合物层。 在钛化合物层上形成第二铝层。 进行热处理以分解残余颗粒并形成金属间化合物（TiAl 3）。

    Interconnection structure of semiconductor integrated circuit device
    9.
    发明授权
    Interconnection structure of semiconductor integrated circuit device 失效
    半导体集成电路器件的互连结构

    公开(公告)号：US5313101A

    公开(公告)日：1994-05-17

    申请号：US104520

    申请日：1993-08-10

    申请人： Shigeru Harada ,  Junichi Arima ,  Noriaki Fujiki

    发明人： Shigeru Harada ,  Junichi Arima ,  Noriaki Fujiki

    IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L29/40

    CPC分类号： H01L23/53223 ,  H01L23/5226 ,  H01L2924/0002

    摘要： A semiconductor integrated circuit device has an interconnection structure in which multilayer aluminum interconnection layers are connected through a connection hole. A first aluminum interconnection layer is formed on a main surface of said semiconductor substrate. An insulating layer is formed on the first aluminum interconnection layer and has a through hole extending to a surface of the first aluminum interconnection layer. A second aluminum interconnection layer is formed on the insulating layer and is electrically connected to the first aluminum interconnection layer through the through hole. The second aluminum interconnection layer includes a titanium layer, a titanium nitride layer and an aluminum alloy layer. The titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum interconnection layer through the through hole. The titanium nitride layer is formed on the titanium layer. The aluminum alloy layer is formed on the titanium nitride layer. An electrical contact resistance between the first and second aluminum interconnection layers is stabilized, and resistance against the electron-migration and stress-migration is improved in the interconnection structure.

    摘要翻译： 半导体集成电路器件具有通过连接孔连接多层铝互连层的互连结构。 第一铝互连层形成在所述半导体衬底的主表面上。 绝缘层形成在第一铝互连层上，并且具有延伸到第一铝互连层的表面的通孔。 第二铝互连层形成在绝缘层上，并通过通孔与第一铝互连层电连接。 第二铝互连层包括钛层，氮化钛层和铝合金层。 在绝缘层上形成钛层，以通过贯通孔与第一铝互连层的表面接触。 在钛层上形成氮化钛层。 在氮化钛层上形成铝合金层。 第一和第二铝互连层之间的电接触电阻是稳定的，并且互连结构中电子迁移和应力迁移的抵抗力得到改善。

    DUMP TRUCK
    10.
    发明申请
    DUMP TRUCK 有权
    垃圾车

    公开(公告)号：US20130169469A1

    公开(公告)日：2013-07-04

    申请号：US13811966

    申请日：2012-05-23

    申请人： Shinji Mitsuta ,  Shigeru Harada ,  Tomikazu Tanuki ,  Eishin Masutani ,  Yukihiro Nakanishi ,  Takeshi Kurihara ,  Dai Tsubone ,  Masaomi Machida

    发明人： Shinji Mitsuta ,  Shigeru Harada ,  Tomikazu Tanuki ,  Eishin Masutani ,  Yukihiro Nakanishi ,  Takeshi Kurihara ,  Dai Tsubone ,  Masaomi Machida

    IPC分类号： G01S13/86 ,  G01S13/93 ,  B60R1/00

    CPC分类号： G01S13/867 ,  B60R1/00 ,  B60R2300/802 ,  G01S13/931 ,  G06T1/0007

    摘要： A dump truck includes a body and a plurality of cameras. The body includes an upper deck and a main frame disposed in a longitudinal direction. The cameras are configured and arranged to obtain images to be combined to generate a bird's-eye image to monitor a periphery of the dump truck. The cameras include a front camera, a rear camera and side cameras. The front camera is disposed at the front of the upper deck to obtain an image of an area in front of the body. The rear camera is disposed at a rear end of the main frame to obtain an image of an area in rear of the body. The side cameras are respectively provided on left and right sides of the upper deck to obtain images of an area between diagonally to the front and diagonally to the rear of the body.

    摘要翻译： 自卸车包括主体和多个照相机。 主体包括沿纵向设置的上甲板和主框架。 相机被配置和布置成获得要组合的图像以产生鸟瞰图像以监视自卸车的周边。 相机包括前置摄像头，后置摄像头和侧面摄像头。 前置摄像机设置在上甲板的前部，以获得身体前方区域的图像。 后置摄像机设置在主框架的后端，以获得身体后方的区域的图像。 侧摄像机分别设置在上甲板的左侧和右侧，以获得在对角线与前部和对角线与身体后部之间的区域的图像。