公开(公告)号：US4896204A

公开(公告)日：1990-01-23

申请号：US224172

申请日：1988-07-25

申请人： Yoshihiro Hirata ,  Reiji Tamaki ,  Takeshi Noguchi ,  Junichi Arima ,  Kenji Saitoh ,  Shigeru Harada

发明人： Yoshihiro Hirata ,  Reiji Tamaki ,  Takeshi Noguchi ,  Junichi Arima ,  Kenji Saitoh ,  Shigeru Harada

IPC分类号： H01L23/522 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53223 ,  H01L23/5329 ,  H01L2924/0002

摘要： An Al layer (6) is first formed to cover an opening region (9) for interconnection in a semiconductor device. Then, an Al-Si-Ti layer (7) having a higher degree of hardness than that of the Al layer (6) is formed on the Al layer (6) and subsequently a mixture layer (8) of aluminum hydrate and aluminum oxide is formed on the surface of the Al-Si-Ti layer (7). Thus, a multilayered film of electrode and interconnection (11) is formed.

摘要翻译： 首先形成Al层（6）以覆盖用于半导体器件中的互连的开口区域（9）。 然后，在Al层（6）上形成硬度比Al层（6）高的Al-Si-Ti层（7），随后形成水合铝和氧化铝的混合层（8） 形成在Al-Si-Ti层（7）的表面上。 因此，形成电极和互连（11）的多层膜。

公开(公告)号：US4983547A

公开(公告)日：1991-01-08

申请号：US260390

申请日：1988-10-20

申请人： Junichi Arima ,  Yoshihiro Hirata ,  Hiroshi Harada ,  Isao Furuta ,  Shigeru Harada ,  Reiji Tamaki

发明人： Junichi Arima ,  Yoshihiro Hirata ,  Hiroshi Harada ,  Isao Furuta ,  Shigeru Harada ,  Reiji Tamaki

IPC分类号： H01L23/00 ,  H01L21/28

CPC分类号： H01L21/28097 ,  Y10S148/147

摘要： In a method of forming a metallic silicide film on a substrate, a metallic silicide film containing silicon at a concentration higher than stoichiometric, is deposited on a substrate. A film of aluminum or aluminum alloy is then deposited on the metallic silicide film. Subsequently, a heat treatment is conducted to cause precipitation of silicon from the metallic silicide film to the aluminum, thereby to lower the silicon concentration in the silicide film.

摘要翻译： 在基板上形成金属硅化物膜的方法中，将含有浓度高于化学计量的硅的金属硅化物膜沉积在基板上。 然后将铝或铝合金膜沉积在金属硅化物膜上。 随后，进行热处理以使硅从金属硅化物膜析出至铝，从而降低硅化物膜中的硅浓度。

公开(公告)号：US4731516A

公开(公告)日：1988-03-15

申请号：US917124

申请日：1986-10-09

申请人： Takeshi Noguchi ,  Yoshihiro Hirata ,  Junichi Arima ,  Eisuke Tanaka ,  Reiji Tamaki ,  Masanori Obata

发明人： Takeshi Noguchi ,  Yoshihiro Hirata ,  Junichi Arima ,  Eisuke Tanaka ,  Reiji Tamaki ,  Masanori Obata

IPC分类号： B23K26/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/304

CPC分类号： H01L21/268 ,  H01L21/2026 ,  Y10S117/904

摘要： The rough ground rear surface 13b of a semiconductor wafer 11 is mirror-polished by localized irradiation with a focused laser beam 21. The wafer is moved relative to the beam, and the melt puddle formed by the beam thereafter recrystallizes at its trailing edge 24 to leave a mirror smooth rear surface 13c.

摘要翻译： 通过用聚焦激光束21的局部照射将半导体晶片11的粗糙的后表面13b镜面抛光。晶片相对于光束移动，并且由光束形成的熔融熔池随后在其后缘24处重结晶至 留下镜面光滑的后表面13c。

公开(公告)号：US4922321A

公开(公告)日：1990-05-01

申请号：US6922

申请日：1987-01-27

申请人： Hajime Arai ,  Isao Furuta ,  Hidefumi Kuroki ,  Junichi Arima ,  Yoshihiro Hirata ,  Shigeru Harada

发明人： Hajime Arai ,  Isao Furuta ,  Hidefumi Kuroki ,  Junichi Arima ,  Yoshihiro Hirata ,  Shigeru Harada

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/532

CPC分类号： H01L24/11 ,  H01L23/53209 ,  H01L23/5328 ,  H01L24/02 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014

摘要： A semiconductor device which includes an electrode portion formed on a wafer; a passivation film deposited on said wafer except for said electrode portion; an insulating film deposited only on said passivation film so as to have a predetermined thickness anad so as to include a concave portion over said electrode portion; and conductive material embedded in said concave portion at least up to the height of said insulating film, wherein the conductive material is intended to be used for bonding to a substrate.

摘要翻译： 一种半导体器件，包括形成在晶片上的电极部分; 除了所述电极部分之外沉积在所述晶片上的钝化膜; 仅在所述钝化膜上沉积以便具有预定厚度的绝缘膜，以便在所述电极部分上方包括凹部; 以及嵌入所述凹部中的导电材料至少高达所述绝缘膜的高度，其中所述导电材料旨在用于与基底结合。

公开(公告)号：US5270253A

公开(公告)日：1993-12-14

申请号：US719109

申请日：1991-06-24

申请人： Hajime Arai ,  Isao Furuta ,  Hidefumi Kuroki ,  Junichi Arima ,  Yoshihiro Hirata ,  Shigeru Harada

发明人： Hajime Arai ,  Isao Furuta ,  Hidefumi Kuroki ,  Junichi Arima ,  Yoshihiro Hirata ,  Shigeru Harada

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L23/5328 ,  H01L23/53209 ,  H01L24/02 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  Y10S148/026

摘要： A semiconductor device which includes an electrode portion formed on a wafer; a passivation film deposited on said wafer except for said electrode portion; an insulating film deposited only on said passivation film so as to have a predetermined thickness and so as to include a concave portion over said electrode portion; and conductive material embedded in said concave portion at least up to the height of said insulating film, wherein the conductive material is intended to be used for bonding to a substrate.

摘要翻译： 一种半导体器件，包括形成在晶片上的电极部分; 除了所述电极部分之外沉积在所述晶片上的钝化膜; 仅在所述钝化膜上沉积以便具有预定厚度并且在所述电极部分上包括凹部的绝缘膜; 以及嵌入所述凹部中的导电材料至少高达所述绝缘膜的高度，其中所述导电材料旨在用于与基底结合。

公开(公告)号：US08658985B2

公开(公告)日：2014-02-25

申请号：US13534033

申请日：2012-06-27

申请人： Yoshihiro Hirata

发明人： Yoshihiro Hirata

IPC分类号： H01J37/302

CPC分类号： H01J37/302 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/304 ,  H01J2237/31754 ,  H01J2237/31764

摘要： The present invention provides a drawing apparatus including a blanker including a plurality of deflectors configured to respectively deflect the plurality of charged particle beams, and a controller configured to transmit a control signal to the blanker, wherein the blanker includes a storage configured to store pattern data, a generator configured to generate, based on pattern information which is included in the control signal and designates the pattern data, and position information which is included in the control signal and designates a drawing position corresponding to the pattern information, a blanking signal for drawing a pattern corresponding to the pattern data stored in the storage at a position on a substrate corresponding to the position information, and a driving device configured to drive the plurality of deflectors in accordance with the generated blanking signal generated.

摘要翻译： 本发明提供了一种绘图装置，包括一个包括多个偏转器的消隐器，该多个偏转器被配置为分别偏转多个带电粒子束;以及控制器，被配置为将一个控制信号发送到该消隐器，其中该消隐器包括被配置为存储图案数据的存储器 ，被配置为基于包括在控制信号中并指定图案数据的图案信息以及包括在控制信号中并指定与图案信息相对应的绘图位置的位置信息来生成用于绘制的消隐信号的发生器 与存储在与位置信息对应的基板上的存储部中的图案数据相对应的图案，以及驱动装置，被配置为根据生成的生成的消隐信号来驱动多个偏转器。

公开(公告)号：US07432726B2

公开(公告)日：2008-10-07

申请号：US10553064

申请日：2004-04-13

申请人： Tetsuji Ueno ,  Yoshihiro Hirata ,  Kazunori Okada ,  Kazunori Kawase

发明人： Tetsuji Ueno ,  Yoshihiro Hirata ,  Kazunori Okada ,  Kazunori Kawase

IPC分类号： G01R31/02

CPC分类号： G01R1/06733

摘要： According to an embodiment, a probe coming into contact with an electrode pad of a measurement object comprises a connection terminal part integrally formed and connected to a substrate, a contact part having a tapered configuration, and a supporting part which supports the contact part. The contact part extending from an end of the supporting part has a sectional configuration which shares at least one side face with the supporting part.

摘要翻译： 根据实施例，与测量对象的电极焊盘接触的探针包括一体形成并连接到基板的连接端子部分，具有锥形构造的接触部分和支撑接触部分的支撑部件。 从支撑部的端部延伸的接触部具有与支撑部分共享至少一个侧面的截面构造。

公开(公告)号：US07338753B2

公开(公告)日：2008-03-04

申请号：US11503303

申请日：2006-08-14

申请人： Jun Yorita ,  Yoshihiro Hirata ,  Tsuyoshi Haga

发明人： Jun Yorita ,  Yoshihiro Hirata ,  Tsuyoshi Haga

IPC分类号： G03F7/039

CPC分类号： B81C99/0085 ,  B81C2201/032 ,  C25D1/003 ,  H01L21/4821 ,  H05K3/202 ,  H05K3/205

摘要： A method of manufacturing a metal microstructure (1) by using a resin mold (13). In order to provide a method in which a mild manufacturing condition which causes less damage to the resin mold (13) can be set and the high-precision metal microstructure (1) can be mass-produced by uniform electroforming, the method of manufacturing the metal microstructure (1) according to the present invention includes the steps of: fixing on a conductive substrate (11) the resin mold (13) having a vacant portion penetrating in the direction of thickness, by interposing a photosensitive polymer (12) having a chemical composition changed by an electron beam, ultraviolet radiation or visible radiation so as to form a layered structure (2) having the resin mold (13); exposing the layered structure (2) having the resin mold (13) to an electron beam, ultraviolet radiation or visible radiation; removing an exposed photosensitive polymer (12c) existing at the vacant portion of the resin mold (13); and filling with a metal (14) the vacant portion of the layered structure (2) having the resin mold (13) by electroforming.

摘要翻译： 一种通过使用树脂模具（13）制造金属微结构（1）的方法。 为了提供可以设定对树脂模具（13）造成较小损害的温和制造条件并且可以通过均匀电铸来大量生产高精度金属微结构（1）的方法，制造 根据本发明的金属微结构（1）包括以下步骤：通过插入具有一个或多个金属微结构（1）的光敏聚合物（12）将具有穿过厚度方向的空白部分的树脂模具（13）固定在导电基板（11）上， 化学成分由电子束，紫外线辐射或可见光辐射而变化，形成具有树脂模具（13）的层状结构（2）。 将具有树脂模具（13）的层状结构（2）暴露于电子束，紫外线或可见光; 去除存在于树脂模具（13）的空缺部分的暴露的光敏聚合物（12c）; 并通过电铸将金属（14）填充到具有树脂模具（13）的层状结构（2）的空位部分上。

公开(公告)号：US07108735B2

公开(公告)日：2006-09-19

申请号：US10473181

申请日：2002-03-26

申请人： Yoshihiro Hirata ,  Yoshio Ueda ,  Hiroaki Takase ,  Kazuaki Suzuki

发明人： Yoshihiro Hirata ,  Yoshio Ueda ,  Hiroaki Takase ,  Kazuaki Suzuki

IPC分类号： B22F9/08

CPC分类号： B22F9/082 ,  B22F9/02 ,  B22F9/08 ,  B22F2009/084 ,  B22F2009/0848 ,  B22F2009/086

摘要： Produce metal particles offering high purity and uniform granular shape and size: by forming a combustion chamber comprising an injector nozzle for mixture gas of oxygen and hydrogen, an ignition device and a material metal feeder in the upper space of a high-pressure water tank filled with inert gas; igniting inside the combustion chamber via the ignition device the injector nozzle for mixture gas of oxygen and hydrogen and melting (vaporize) the material fed by the material metal feeder; and then causing the produced molten metal droplets to contact high-pressure water and let the resulting metallic particles to precipitate in water.

摘要翻译： 生产提供高纯度和均匀颗粒形状和尺寸的金属颗粒：通过形成燃烧室，其包括用于氧气和氢气的混合气体的喷射器喷嘴，在高压水箱的上部空间中的点火装置和材料金属进料器 用惰性气体 通过点火装置在燃烧室内点燃用于氧气和氢气的混合气体的喷射器喷嘴并熔化（蒸发）由材料金属进料器供给的材料; 然后使产生的熔融金属液滴接触高压水并使得到的金属颗粒在水中沉淀。

公开(公告)号：US06974509B2

公开(公告)日：2005-12-13

申请号：US10449516

申请日：2003-06-02

申请人： Koichi Hagiwara ,  Masaru Yamazaki ,  Yoshihiro Hirata ,  Mitsuhide Hirabayashi ,  Kozo Ito

发明人： Koichi Hagiwara ,  Masaru Yamazaki ,  Yoshihiro Hirata ,  Mitsuhide Hirabayashi ,  Kozo Ito

IPC分类号： C22C9/02 ,  C22C9/04

CPC分类号： C22C9/04

摘要： Brass consists essentially of Cu, Sn, Bi, Fe, Ni and P in weight ratios respectively of 58.0-63.2%, 0.3-2.0%, 0.7-2.5%, 0.05-0.3%, 0.10-0.50% and 0.05-0.15% plus the balance of Zn and unavoidable impurities to exhibit excellent tolerance for dezincification, hot forgeability and machinability.

摘要翻译： 黄铜主要由Cu，Sn，Bi，Fe，Ni和P组成，重量比分别为58.0-63.2％，0.3-2.0％，0.7-2.5％，0.05-0.3％，0.10-0.50％和0.05-0.15％ Zn和不可避免的杂质的平衡表现出对脱锌，热锻造和切削性的优异的耐受性。