ORGANIC ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    ORGANIC ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    有机电子器件及其制造方法

    公开(公告)号:US20120125431A1

    公开(公告)日:2012-05-24

    申请号:US13336420

    申请日:2011-12-23

    摘要: An organic electronic device which does not deteriorate a device function over a long period of time and a method for its manufacture. The organic electronic device, containing: an organic semiconductor element (B) including a pair of electrodes; a layer (C) containing a scavenger, which absorbs at least one of moisture and oxygen; and a gas barrier film (D), in that order; and an anticorrosion layer (E) between the pair of electrodes and the layer (C), wherein the layer (E) has a film thickness of 20 μm or more, and a water vapor transmission rate Pe (g/m2/day) of layer (E) at 40° C. and 90% RH is 15 g/m2/day≧Pe>Pd relative to a water vapor transmission rate Pd of the film (D) at 40° C. and 90% RH, wherein Pd is 10−4≦Pd≦10−1 g/m2/day.

    摘要翻译: 长时间不劣化器件功能的有机电子器件及其制造方法。 该有机电子器件包含:包括一对电极的有机半导体元件(B); 含有清除剂的层(C),其吸收水分和氧气中的至少一种; 和阻气膜(D); 和所述一对电极与所述层(C)之间的防腐层(E),其中所述层(E)的膜厚为20μm以上,水蒸汽透过率Pe(g / m 2 / day)为 在40℃和90%RH下,相对于膜(D)的水蒸汽透过率Pd,在40℃和90%RH下的层(E)为15g / m 2 /天≧Pe> Pd,其中Pd 为10-4≦̸ Pd≦̸ 10-1g / m2 /天。

    ELECTROLUMINESCENCE ELEMENT AND LIGHTING APPARATUS
    2.
    发明申请
    ELECTROLUMINESCENCE ELEMENT AND LIGHTING APPARATUS 有权
    电光元件和照明设备

    公开(公告)号:US20090072733A1

    公开(公告)日:2009-03-19

    申请号:US11908138

    申请日:2006-03-02

    IPC分类号: H01J1/62

    摘要: An electroluminescent element wherein an electrode 1, an electroluminescent layer 2, a high-refractive-index layer 3 (a transparent electrode layer 3A and an intermediate layer 3B) and a translucent body 4 are sequentially laminated. On light-emitting-surface side of the high-refractive-index layer 3 and the translucent body 4, layers 5A and 5B individually having a light-scattering function are provided respectively. The presence of the light-scattering layers 5A and 5B on the light-emitting-surface side of the high-refractive-index layer 3 and the translucent body 4 enables to emit light from the electroluminescent element through multiple scattering of guided light, which travels inside the translucent body 4 in the planar direction while being totally reflected by the interface between the translucent body 4 and air, and other guided light, which travels inside a thin film including the electroluminescent layer 2 and the high-refractive-index layer 3.

    摘要翻译: 依次层叠电极1,电致发光层2,高折射率层3(透明电极层3A和中间层3B)以及半透明体4的电致发光元件。 在高折射率层3和半透明体4的发光面侧分别设置具有光散射功能的层5A,5B。 在高折射率层3和半透明体4的发光表面侧的光散射层5A和5B的存在使得能够通过行进的多个引导光散射从电致发光元件发出光 在半透明体4的内部,通过半透明体4与空气之间的界面全反射,并且在包含电致发光层2和高折射率层3的薄膜内行进的其它引导光在平面方向的内部。

    Electroluminescence element and lighting apparatus
    3.
    发明授权
    Electroluminescence element and lighting apparatus 有权
    电致发光元件和照明装置

    公开(公告)号:US08125128B2

    公开(公告)日:2012-02-28

    申请号:US11908138

    申请日:2006-03-02

    IPC分类号: H05B33/02

    摘要: An electroluminescent element wherein an electrode 1, an electroluminescent layer 2, a high-refractive-index layer 3 (a transparent electrode layer 3A and an intermediate layer 3B) and a translucent body 4 are sequentially laminated. On light-emitting-surface side of the high-refractive-index layer 3 and the translucent body 4, layers 5A and 5B individually having a light-scattering function are provided respectively. The presence of the light-scattering layers 5A and 5B on the light-emitting-surface side of the high-refractive-index layer 3 and the translucent body 4 enables to emit light from the electroluminescent element through multiple scattering of guided light, which travels inside the translucent body 4 in the planar direction while being totally reflected by the interface between the translucent body 4 and air, and other guided light, which travels inside a thin film including the electroluminescent layer 2 and the high-refractive-index layer 3.

    摘要翻译: 依次层叠电极1,电致发光层2,高折射率层3(透明电极层3A和中间层3B)以及半透明体4的电致发光元件。 在高折射率层3和半透明体4的发光面侧分别设置具有光散射功能的层5A,5B。 在高折射率层3和半透明体4的发光表面侧的光散射层5A和5B的存在使得能够通过行进的多个引导光散射从电致发光元件发出光 在半透明体4的内部,通过半透明体4与空气之间的界面全反射,并且在包含电致发光层2和高折射率层3的薄膜内行进的其它引导光在平面方向的内部。

    Silica
    5.
    发明授权
    Silica 有权
    二氧化硅

    公开(公告)号:US07101523B2

    公开(公告)日:2006-09-05

    申请号:US10255140

    申请日:2002-09-25

    IPC分类号: C01B33/32

    CPC分类号: C01B33/152 C01B33/1585

    摘要: Silica with a large pore volume, a large specific surface area, a narrow pore distribution, low contents of unwanted metal impurities, and excellent physical properties such as high heat-resistance and water-resistance is provided. The silica has a mode pore diameter (Dmax) of 20 nm or less, and a solid-state Si nuclear magnetic resonance (hereinafter called solid-state Si NMR) spectrum of the silica includes a chemical shift (δ ppm) of Q4 peak meeting the following inequality (I). −0.0705×(Dmax)−110.36>δ  (I) The silica with such properties can be suitably used in fields of which particularly excellent heat resistance and water resistance are required, and moreover controlled pore properties, and the fact that physical properties scarcely change over a long period of time are required among the above-mentioned applications.

    摘要翻译: 提供了孔体积大,比表面积大,孔分布窄,不需要的金属杂质含量低,耐热性,耐水性等优良物性的二氧化硅。 二氧化硅的模孔径(D max max)为20nm以下,二氧化硅的固体Si核磁共振(以下称固体Si NMR)谱为化学位移 (Δppm)满足以下不等式(I)。 <?in-line-formula description =“在线公式”end =“lead”?> - 0.0705x(D最大值) - 110.36> delta(I)<?in-line-formula 描述=“在线式”结束=“尾”?具有这种性质的二氧化硅可以适用于需要特别优异的耐热性和耐水性的领域,并且还可以控制孔的性质,以及物理性能 在上述应用中,需要很长时间的改变。

    Silica
    6.
    发明申请
    Silica 有权
    二氧化硅

    公开(公告)号:US20050047985A1

    公开(公告)日:2005-03-03

    申请号:US10255140

    申请日:2002-09-25

    CPC分类号: C01B33/152 C01B33/1585

    摘要: Silica with a large pore volume, a large specific surface area, a narrow pore distribution, low contents of unwanted metal impurities, and excellent physical properties such as high heat-resistance and water-resistance is provided. The silica has a mode pore diameter (Dmax) of 20 nm or less, and a solid-state Si nuclear magnetic resonance (hereinafter called solid-state Si NMR) spectrum of the silica includes a chemical shift (δ ppm) of Q4 peak meeting the following inequality (I). −0.0705×(Dmax)−110.36>δ  (I) The silica with such properties can be suitably used in fields of which particularly excellent heat resistance and water resistance are required, and moreover controlled pore properties, and the fact that physical properties scarcely change over a long period of time are required among the above-mentioned applications.

    摘要翻译: 提供了孔体积大,比表面积大,孔分布窄,不需要的金属杂质含量低,耐热性,耐水性等优良物性的二氧化硅。 二氧化硅的模式孔径(Dmax)为20nm以下,二氧化硅的固体Si核磁共振(以下称为固体Si NMR)谱为Q 4的化学位移(δppm) >峰值满足以下不等式(I)。 -0.0705x(Dmax)-110.36>δ(I)具有这种性质的二氧化硅可以适用于需要特别优异的耐热性和耐水性的领域,并且还可以控制孔的性质,并且物理性质几乎不变化 在上述应用中需要很长时间。