摘要:
Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.
摘要:
Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.
摘要:
In a sample height regulating method, an area including the observation point on the sample is scan-irradiated with a first charged particle beam to obtain a first secondary electron image including the observation point. An area including the observation point on the sample is then scan-irradiated with a second charged particle beam to obtain a second secondary electron image including the observation point. Thereafter, based on magnifications of the first secondary electron image and the second secondary electron image and a distance between the observation point in the first secondary electron image and the observation point in the second secondary electron image, a height of the sample required for focusing the first charged particle beam and the second charged particle beam on the observation point is calculated. A sample stage supporting the sample is then displaced so as to position the sample at the calculated sample height.
摘要:
By indicating a desired position in any one image plane of a 1st image plane and a 2nd image plane and specifying a corresponding position in the other image plane by using a conversion function for mutually converting an coordinate system of the 1st image plane and that of the 2nd image plane, it is possible to specify a position, in the other image plane, corresponding to the desired position indicated in the any one image plane.
摘要:
Techniques for specifying an observing or working position of a sample are provided. Digitized data of a sample is obtained and stored in a 1st storage device. A 1st display area displays an image of a portion containing a desired observing or working position of the digitized data stored in the 1st storage device. A 1st position that is indicated by a pointing device on the 1st display area is stored in a 2nd storage device. The sample is moved to an observing or working position for observation, and an observation image of the sample is stored in the 3rd storage device. A 2nd display area displays the observation image of the sample stored in the 3rd storage device. A position indicated on the 2nd display area and corresponding to the 1st position stored in the 2nd storage device is stored in a 4th storage device. A conversion function for converting a coordinate system of the 1st display area and the 2nd display area is calculated using the 1st position stored in the 2nd storage means and the position stored in the 4th storage device. A position indicated in one of the 1st and 2nd display areas and corresponding to another position indicated in the other of the 1st and 2nd display areas is calculated in accordance with the calculated conversion function.
摘要:
There are provided a detecting step of detecting secondary charged particles generated from an observation area of a sample when an electron beam or a focused ion beam is emitted onto the observation area under a certain irradiation condition; an image forming step of forming a plurality of observation images acquired by dividing the observation area and having an equal periodic pattern, from the secondary charged particles detected in the detecting step; and a defect recognizing step of recognizing a defect in the observation area from information on a difference acquired by comparing the plurality of observation images formed in the image forming step. Additionally, the detecting step, the image forming step, and the defect recognizing step are performed even when the electron beam or the focused ion beam is emitted onto the observation area under an irradiation condition different from the certain irradiation condition.
摘要:
Calculation means calculates a sample height for focusing an ion beam and an electron beam onto a same observation point, based on magnifications of a secondary electron image obtained by an irradiation with the ion beam and a secondary electron image obtained by an irradiation with the electron beam, and a distance between an observation point in the secondary electron image obtained by the irradiation with the ion beam and the observation point in the secondary electron image obtained by the irradiation with the electron beam.
摘要:
To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.
摘要:
To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.
摘要:
The X-ray fluorescence analyzer (100) includes: an enclosure (10); a door (20) for putting the sample into and out of the enclosure; a height measurement mechanism (7) capable of measuring a height at the irradiation point; a moving mechanism control unit (9) for adjusting a distance between the sample and the radiation source as well as the X-ray detector based on the measured height at the irradiation point; a laser unit (7) for irradiating the irradiation point with a visible light laser beam; a laser start control unit (9) for irradiating the visible light laser beam by the laser unit (7) when the door is open state; and a height measurement mechanism start control unit (9) for starting the height measurement mechanism to measure the height at the irradiation point when the door is opened.