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公开(公告)号:US10077381B2
公开(公告)日:2018-09-18
申请号:US15205684
申请日:2016-07-08
Applicant: K.C. Tech Co., Ltd.
Inventor: Dong Kyu Choi , Young Ho Yoon , Hyun Goo Kong , Jin Sook Hwang , Han Teo Park
Abstract: A polishing slurry composition is provided. The polishing slurry composition includes at least two types of abrasive particles among first abrasive particles, second abrasive particles, and third abrasive particles, and an oxidizer. A peak-to-valley roughness Rpv decreases when a contact area between the abrasive particles and a tungsten-containing film increases.
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公开(公告)号:US09994735B2
公开(公告)日:2018-06-12
申请号:US15189190
申请日:2016-06-22
Applicant: K.C. Tech Co., Ltd.
Inventor: Jin Sook Hwang , Hyun Goo Kong , Han Teo Park
IPC: C09K13/00 , C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461 , C09G1/02 , C09K3/14 , H01L21/321 , H01L21/306 , C23F3/06 , C23F1/10
CPC classification number: C09G1/02 , C08K3/36 , C08K2003/2213 , C08K2003/2227 , C08K2003/2237 , C08K2003/2244 , C08K2003/2262 , C09K3/14 , C09K13/00 , C23F1/10 , C23F3/06 , H01L21/30625 , H01L21/32115
Abstract: A slurry composition for polishing tungsten is provided. The slurry composition for polishing tungsten may include a water-soluble polymer, abrasive particles and an etching adjuster.
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