公开(公告)号：US20170062244A1

公开(公告)日：2017-03-02

申请号：US15046781

申请日：2016-02-18

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Katsuhiro SATO ,  Junichi IGARASHI ,  Yoshihiro OGAWA

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: H01L21/67051 ,  H01L21/02057 ,  H01L21/67028

Abstract: A substrate processing method according to an embodiment is a substrate processing method for drying a substrate. The substrate processing method includes supplying a solution in which a sublimation material is dissolved in a first solvent to a surface of a cleaned substrate. The substrate processing method includes eliminating at least a portion of association states of the sublimation material. The substrate processing method includes precipitating the sublimation material on the surface of the substrate. The substrate processing method includes removing the precipitated sublimation material by sublimation.

Abstract translation: 根据实施方式的基板处理方法是用于干燥基板的基板处理方法。 基板处理方法包括将升华材料溶解在第一溶剂中的溶液提供到清洁的基板的表面。 衬底处理方法包括消除升华材料的至少一部分缔合状态。 基板处理方法包括在基板的表面上沉淀升华材料。 基板处理方法包括通过升华去除沉淀的升华材料。

公开(公告)号：US20140213064A1

公开(公告)日：2014-07-31

申请号：US13953002

申请日：2013-07-29

Applicant: Kabushiki Kaisha Toshiba

Inventor： Tatsuhiko KOIDE ,  Yoshihiro OGAWA ,  Masahiro KIYOTOSHI

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/67034 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3086 ,  H01L27/11521

Abstract: A semiconductor manufacturing apparatus according to the present embodiment comprises a chamber. A chemical-agent supply part is configured to supply a water-repellent agent or an organic solvent to a surface of a semiconductor substrate having been cleaned with a cleaning liquid in the chamber. A spray part is configured to spray a water-capture agent capturing water into an atmosphere in the chamber.

Abstract translation: 根据本实施例的半导体制造装置包括室。 化学试剂供给部构成为在室内用清洗液清洗的半导体基板的表面供给防水剂或有机溶剂。 喷射部分被配置成将捕获水的水捕获剂喷射到室中的气氛中。

公开(公告)号：US20160293400A1

公开(公告)日：2016-10-06

申请号：US14836145

申请日：2015-08-26

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shinsuke KIMURA ,  Tatsuhiko KOIDE ,  Yoshihiro OGAWA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/306

CPC classification number: H01L21/02057 ,  H01L21/30604 ,  H01L21/67028 ,  H01L21/67109

Abstract: In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.

Abstract translation: 在一个实施例中，衬底处理设备包括构造成容纳衬底的壳体。 该装置还包括化学供应模块，其被配置为将气体状态的一种或多种化学品供应到壳体中的基底，所述一种或多种化学品包括含有甲硅烷基化剂的第一化学品。 所述设备还包括冷却模块，所述冷却模块被配置为冷却所述壳体中的所述基板，而所述一种或多种化学品中的任何一种被供应到所述壳体中的所述基板。

公开(公告)号：US20170062231A1

公开(公告)日：2017-03-02

申请号：US15244087

申请日：2016-08-23

Applicant: Kabushiki Kaisha Toshiba

Inventor： Katsuhiro SATO ,  Kaori DEURA ,  Yoshinori KITAMURA ,  Takahiro TERADA ,  Yoshihiro OGAWA ,  Yuji HASHIMOTO ,  Masaaki HIRAKAWA ,  Yukako MURAKAMI ,  Hideaki HIRABAYASHI

IPC: H01L21/306 ,  H01L21/67

CPC classification number: H01L21/67086 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/31111

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.

Abstract translation: 根据实施例的基板处理装置包括处理部，循环路径，加热器和第一喷射器。 向处理部提供含有磷酸的蚀刻剂和二氧化硅沉积抑制剂，并且使其表面上具有氮化硅膜的基板与蚀刻剂接触以从基板除去氮化硅膜。 循环路径在处理部分中循环腐蚀剂。 加热器加热蚀刻剂。 将第一喷射器设置在循环路径上，并将二氧化硅沉积抑制器注入到蚀刻剂中。

公开(公告)号：US20160365240A1

公开(公告)日：2016-12-15

申请号：US14986977

申请日：2016-01-04

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tomohiko SUGITA ,  Katsuhiro SATO ,  Hiroyasu llMORI ,  Yoshihiro OGAWA

IPC: H01L21/02 ,  B08B3/10 ,  H01L21/67

CPC classification number: H01L21/02052 ,  H01L21/67028

Abstract: In one embodiment, a substrate treatment method includes cleaning and rinsing a surface of a substrate provided with a pattern, and supplying a solidifying agent containing liquid that contains a solidifying agent to the cleaned and rinsed surface of the substrate. The method further includes precipitating the solidifying agent as solid on the surface of the substrate, and decomposing and gasifying the solid to remove the solid from the surface of the substrate. Furthermore the solidifying agent contains an ammonium salt, and the ammonium salt contains an ammonium ion or an ion having a structure in which at least one of four hydrogen atoms of an ammonium ion is substituted with another atom or an atom group.

Abstract translation: 在一个实施方案中，基材处理方法包括清洗和冲洗具有图案的基材的表面，并将含有固化剂的含有液体的固化剂供应到基材的经清洁和漂洗的表面。 该方法还包括将固体凝固剂沉淀在基材的表面上，并将固体分解和气化以从基材表面除去固体。 此外，固化剂含有铵盐，铵盐含有铵离子或具有铵离子的四个氢原子中的至少一个被其它原子或原子基团取代的结构的离子。

公开(公告)号：US20140238452A1

公开(公告)日：2014-08-28

申请号：US14271679

申请日：2014-05-07

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yoshihiro OGAWA ,  Hajime ONODA ,  Hiroshi KAWAMOTO

IPC: H01L21/67

CPC classification number: H01L21/67028 ,  B08B3/022 ,  C11D11/0047 ,  H01L21/02057

Abstract: A semiconductor substrate cleaning method includes cleaning a semiconductor substrate formed with a line-and-space pattern, supplying rinse water to rinse the substrate, rinsing the substrate, and drying the substrate. The supplying rinse water includes supplying deionized water and hydrochloric acid into a mixing section to mix the deionized water and the hydrochloric acid into a mixture, heating the mixture in the mixing section by a heater, detecting a pH value and a temperature of the mixture by a pH sensor and a temperature sensor respectively, adjusting an amount of hydrochloric acid supplied into the mixing section so that the rinse water has a predetermined pH value indicative of acidity, and energizing or de-energizing the heater so that the temperature of the mixture detected by the temperature sensor reaches a predetermined temperature, thereby producing the rinse water which has a temperature of not less than 70° C. and is acidic.

Abstract translation: 半导体衬底清洗方法包括清洗形成有线间距图案的半导体衬底，提供冲洗水以冲洗衬底，冲洗衬底和干燥衬底。 供应冲洗水包括将去离子水和盐酸加入到混合部分中以将去离子水和盐酸混合成混合物，通过加热器加热混合部分中的混合物，通过加热器检测混合物的pH值和温度， pH传感器和温度传感器，调节供给到混合部分中的盐酸的量，使得冲洗水具有指示酸度的预定pH值，以及加热器的通电或断电，从而检测到混合物的温度 通过温度传感器达到预定温度，从而产生温度不低于70℃并呈酸性的冲洗水。

公开(公告)号：US20170250069A1

公开(公告)日：2017-08-31

申请号：US15239243

申请日：2016-08-17

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tomohiko SUGITA ,  Hiroyasu llMORI ,  Yoshihiro OGAWA

IPC: H01L21/02 ,  H01L21/687 ,  B08B3/12 ,  H01L21/67 ,  B01D43/00 ,  B01D49/00

CPC classification number: H01L21/02057 ,  B01D21/283 ,  B01D43/00 ,  B01D49/006 ,  B01D51/08 ,  B08B3/12 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/68764

Abstract: In one embodiment, a dust collecting apparatus includes a container configured to contain a fluid that includes particles to be collected. The apparatus further includes one or more sound sources configured to generate, in the container, a standing sound wave including at least one node to trap the particles in a vicinity of the node. The one or more sound sources are configured to generate the standing sound wave so that the node does not contact a wall face of the container or contacts a predetermined portion of the wall face of the container. The predetermined portion is formed of a member that prevents the particles from leaving from the node located in a vicinity of the predetermined portion.

公开(公告)号：US20170154894A1

公开(公告)日：2017-06-01

申请号：US15185510

申请日：2016-06-17

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yasuhito YOSHIMIZU ,  Hiroaki YAMADA ,  Yoshinori KITAMURA ,  Yoshihiro OGAWA

IPC: H01L27/115 ,  H01L29/06 ,  H01L21/8234

CPC classification number: H01L27/11582 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/31111 ,  H01L21/7682 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/0649

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes: forming a first film including a conductive material above a semiconductor substrate; forming a second film on the first film; forming a third film including a conductive material on the second film; exposing a part of the second film; and wet etching the second film. In the wet etching, a first and second insulation films are deposited on side surfaces of the first and third films, and part of a space between the first and third films is blocked by the first and second insulation films to form an air gap between the first and third films.

公开(公告)号：US20170125267A1

公开(公告)日：2017-05-04

申请号：US15408554

申请日：2017-01-18

Applicant: Kabushiki Kaisha Toshiba

Inventor： Shinsuke KIMURA ,  Yoshihiro OGAWA

IPC: H01L21/67 ,  B08B7/00 ,  B08B3/08

CPC classification number: H01L21/67051 ,  B08B3/08 ,  B08B7/0057 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67057 ,  H01L21/6715

Abstract: A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.

公开(公告)号：US20160049289A1

公开(公告)日：2016-02-18

申请号：US14925805

申请日：2015-10-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiro OGAWA ,  Tatsuhiko KOIDE ,  Shinsuke KIMURA ,  Hisashi OKUCHI ,  Hiroshi TOMITA

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/0206 ,  H01L21/02043 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67028

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

Abstract translation: 在一个实施例中，处理半导体衬底的表面的设备包括基板保持和旋转单元，第一至第四供电单元和去除单元。 基板保持旋转单元保持在其表面上形成有凸起图案并使半导体基板旋转的半导体基板。 第一供给单元向半导体基板的表面供给化学品，以清洁半导体基板。 第二供给单元向半导体基板的表面供给纯水，以冲洗半导体基板。 第三供给单元向半导体基板的表面供给防水剂，以在凸形图案的表面上形成防水保护膜。 为了冲洗半导体衬底，第四供应单元将用纯水或酸性水稀释的酒精提供给半导体衬底的表面。 去除单元除去留下凸起图案的防水保护膜。