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公开(公告)号：US12034091B2
公开(公告)日：2024-07-09
申请号：US17184297
申请日：2021-02-24
发明人： Honam Kwon , Kazuhiro Suzuki , Keita Sasaki , Mariko Shimizu
IPC分类号： H01L31/0232 , G01S17/08 , G01S17/89 , H01L27/144 , H01L31/107
CPC分类号： H01L31/02327 , G01S17/08 , G01S17/89 , H01L27/1446 , H01L31/107
摘要： According to one embodiment, a light detector includes a first semiconductor layer of a first conductivity type, a first region, a quenching part, a second region, and a first layer. The first region is located on a portion of the first semiconductor layer, includes a first-conductivity-type first semiconductor region that has a higher first-conductivity-type impurity concentration than the first semiconductor layer, and includes a second semiconductor region of a second conductivity type provided on the first semiconductor region. The quenching part is electrically connected to the second semiconductor region. The second region is located on another portion of the first semiconductor layer, includes a second-conductivity-type third semiconductor region, and includes a first-conductivity-type fourth semiconductor region provided on a portion of the third semiconductor region. The first layer is located on the second region and includes a resin that absorbs or reflects light.
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公开(公告)号：US11996419B2
公开(公告)日：2024-05-28
申请号：US17445590
申请日：2021-08-20
发明人： Kazuaki Okamoto , Honam Kwon , Mariko Shimizu , Kazuhiro Suzuki , Keita Sasaki , Ikuo Fujiwara
IPC分类号： H01L27/144 , G01S7/481 , G01S17/10 , H01L31/0232 , H01L31/0352 , H01L31/107
CPC分类号： H01L27/1446 , G01S7/4816 , G01S17/10 , H01L31/02327 , H01L31/03529 , H01L31/107
摘要： According to one embodiment, a light detector includes a plurality of elements. Each of the elements includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is located on the first semiconductor region and has a higher first-conductivity-type impurity concentration than the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The elements are arranged at a first period in a second direction crossing a first direction. The first direction is from the first semiconductor region toward the second semiconductor region. A quenching part is electrically connected with the third semiconductor region. Multiple lenses are located respectively on the elements. One of the lenses is positioned on one of the elements. A refracting layer is located between the elements and the lenses. The refracting layer has a first thickness.
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公开(公告)号：US20180266881A1
公开(公告)日：2018-09-20
申请号：US15703145
申请日：2017-09-13
发明人： Ikuo FUJIWARA , Yuki Nobusa , Honam Kwon , Kazuhiro Suzuki
IPC分类号： G01J1/44 , G01V8/10 , H01L31/107 , H01L27/144
CPC分类号： G01J1/44 , G01J2001/444 , G01J2001/4466 , G01V8/10 , H01L27/1443 , H01L31/02019 , H01L31/107
摘要： An photodetection device according to an embodiment includes: a pixel including at least one cell, the at least one cell including an avalanche photodiode and a resistor connected in series to the avalanche photodiode; a voltage source configured to apply voltage to the cell of the pixel; and a temperature detecting circuit including a temperature detecting element configured to detect a temperature of the pixel, wherein the temperature detecting element includes: a photodiode having the same structure as the avalanche photodiode; and a light shielding structure disposed on an upper surface of the photodiode.
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公开(公告)号：US20150226863A1
公开(公告)日：2015-08-13
申请号：US14694583
申请日：2015-04-23
发明人： Go KAWATA , Hideyuki Funaki , Honam Kwon , Risako Ueno , Kazuhiro Suzuki
CPC分类号： G01T1/2002 , G01N23/046 , G01T1/2018 , G01T1/248
摘要： A radiation detection apparatus according to an embodiment includes: a scintillator; a photon detection device array including a plurality of cells each being a photon detection device with an avalanche photodiode configured to detect visible radiation photons emitted from the scintillator and a resistor disposed along a part of a periphery of an active region of the avalanche photodiode; and a reflector configured to reflect a visible radiation photon and disposed in a region that does not include the active regions and the resistors of the cells, on a face including the active regions.
摘要翻译： 根据实施例的放射线检测装置包括：闪烁体; 光子检测装置阵列，其包括多个单元，每个单元均为具有雪崩光电二极管的光子检测装置，所述雪崩光电二极管被配置为检测从所述闪烁体发射的可见光辐射光子和沿着所述雪崩光电二极管的有源区的周边的一部分设置的电阻器; 以及反射器，被配置为在包括有源区域的面上反射可见光辐射并且被布置在不包括电池的有源区域和电阻器的区域中。
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公开(公告)号：US11454581B2
公开(公告)日：2022-09-27
申请号：US16557056
申请日：2019-08-30
发明人： Honam Kwon , Ikuo Fujiwara , Kazuhiro Suzuki , Keita Sasaki , Yuki Nobusa , Yasushi Shinjo
摘要： The molecule detecting apparatus of an embodiment includes a light source 31, a fluorescent layer 42 emitting different fluorescence depending on the kind of a target molecule 60 captured when being irradiated with light from the light source 31, a photodetector 32 configured to detect fluorescence, and the photodetector 32 is an array of avalanche photodiodes operating in Geiger mode.
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公开(公告)号：US11329184B2
公开(公告)日：2022-05-10
申请号：US16553221
申请日：2019-08-28
发明人： Masaki Atsuta , Kazuhiro Suzuki , Ikuo Fujiwara , Honam Kwon , Keita Sasaki , Yuki Nobusa
IPC分类号： G01S17/894 , H01L31/107 , G01S7/481 , G01S17/08 , H01L27/144 , H01L49/02
摘要： A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.
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公开(公告)号：US10263128B2
公开(公告)日：2019-04-16
申请号：US15904533
申请日：2018-02-26
发明人： Honam Kwon , Ikuo Fujiwara , Keita Sasaki , Yuki Nobusa , Kazuhiro Suzuki
IPC分类号： H01L31/0232 , H01L27/144 , H01L31/0216
摘要： A photodetector includes a structure that converts ultraviolet light into visible light; and a photodetection element that detects the visible light converted by the structure, wherein the structure is provided on the photodetection element and protrudes in a predetermined shape on a side opposite to the photodetection element.
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公开(公告)号：US09791599B2
公开(公告)日：2017-10-17
申请号：US14658686
申请日：2015-03-16
CPC分类号： G02B3/0037 , G01B11/14 , G02B3/0056 , G06K9/209 , G06K9/32 , G06K9/42 , G06K9/6202
摘要： According to an embodiment, an image processing method is implemented in an imaging device that includes a microlens array including microlenses, a main lens configured to guide light from a photographic subject to the microlens array, and an image sensor configured to receive the light after passing through the main lens and the microlens array. The method includes: obtaining an image captured by the image sensor; setting, according to an image height, an arrangement of a microlens image of interest and comparison-target microlens images from among microlens images that are included in the image and that are formed by the microlenses; detecting an amount of image shift between the microlens image of interest and each of the comparison-target microlens images by comparing the microlens image of interest with the comparison-target microlens images; and calculating a distance corresponding to the microlens image of interest using the amounts of image shift.
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公开(公告)号：US09377540B2
公开(公告)日：2016-06-28
申请号：US14694583
申请日：2015-04-23
发明人： Go Kawata , Hideyuki Funaki , Honam Kwon , Risako Ueno , Kazuhiro Suzuki
CPC分类号： G01T1/2002 , G01N23/046 , G01T1/2018 , G01T1/248
摘要： A radiation detection apparatus according to an embodiment includes: a scintillator; a photon detection device array including a plurality of cells each being a photon detection device with an avalanche photodiode configured to detect visible radiation photons emitted from the scintillator and a resistor disposed along a part of a periphery of an active region of the avalanche photodiode; and a reflector configured to reflect a visible radiation photon and disposed in a region that does not include the active regions and the resistors of the cells, on a face including the active regions.
摘要翻译： 根据实施例的放射线检测装置包括：闪烁体; 光子检测装置阵列，其包括多个单元，每个单元均为具有雪崩光电二极管的光子检测装置，所述雪崩光电二极管被配置为检测从所述闪烁体发射的可见光辐射光子和沿着所述雪崩光电二极管的有源区的周边的一部分设置的电阻器; 以及反射器，被配置为在包括有源区域的面上反射可见光辐射并且被布置在不包括电池的有源区域和电阻器的区域中。
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公开(公告)号：US20140131553A1
公开(公告)日：2014-05-15
申请号：US14077537
申请日：2013-11-12
发明人： Hiroto HONDA , Kazuhiro Suzuki , Mitsuyoshi Kobayashi , Risako Ueno , Honam Kwon , Hideyuki Funaki
IPC分类号： H01L27/146
CPC分类号： H04N5/374 , G02B3/0056 , G02B13/0085 , H01L27/14605 , H01L27/14625 , H01L27/14627 , H04N5/2254 , H04N5/2258 , H04N5/347 , H04N5/3745
摘要： A solid-state imaging device according to an embodiment includes: an imaging element including an imaging area formed with a plurality of pixel blocks each including pixels; a first optical system forming an image of an object on an imaging surface; and a second optical system re-forming the image, which has been formed on the imaging surface, on the pixel blocks corresponding to microlenses, the second optical system including a microlens array formed with the microlenses provided in accordance with the pixel blocks. The microlenses are arranged in such a manner that an angle θ between a straight line connecting center points of adjacent microlenses and one of a row direction and a column direction in which the pixels are aligned is expressed as follows: θ>sin−1(2 dp/Dml), where Dml represents microlens pitch, and dp represents pixel pitch.
摘要翻译： 根据实施例的固态成像装置包括：成像元件，包括形成有包括像素的多个像素块的成像区域; 第一光学系统，其在成像表面上形成物体的图像; 以及第二光学系统，其已经形成在成像表面上的图像对应于微透镜的像素块，第二光学系统包括由根据像素块设置的微透镜形成的微透镜阵列。 微透镜以角度和角度的方式排列; 在连接相邻微透镜的中心点的直线与像素排列的行方向和列方向之间的直线表示如下：＆eta; sin-1（2dp / Dml）其中Dml表示微透镜间距， dp表示像素间距。
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