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公开(公告)号：US20190019952A1
公开(公告)日：2019-01-17
申请号：US16133343
申请日：2018-09-17
Applicant: Kabushiki Kaisha Toshiba
Inventor： Takeshi Gotanda , Shigehiko Mori , Akihiro Matsui , Haruhi Oooka
Abstract: The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.
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公开(公告)号：US09818945B2
公开(公告)日：2017-11-14
申请号：US14967675
申请日：2015-12-14
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Yoshihiko Nakano , Takeshi Gotanda , Shigehiko Mori , Rumiko Hayase
CPC classification number: H01L51/0036 , C08G61/126 , C08G75/00 , C08G2261/1412 , C08G2261/1424 , C08G2261/148 , C08G2261/149 , C08G2261/314 , C08G2261/3243 , C08G2261/344 , C08G2261/91 , H01L51/0043 , H01L51/0047 , H01L51/4253 , Y02E10/549
Abstract: In one embodiment, a polymer includes a repeating unit represented by a formula (1) shown below. A weight-average molecular weight of the polymer is in a range of 3000 or more to 1000000 or less. R1 indicates a monovalent group selected from hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aromatic group, and a substituted or unsubstituted hetero-aromatic group. R2, R3, and R4 indicate independently a monovalent group selected from hydrogen, halogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aromatic group, and a substituted or unsubstituted hetero-aromatic group. X, Y, and Z indicate independently an atom selected from O, S, and Se.
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公开(公告)号：US10714270B2
公开(公告)日：2020-07-14
申请号：US15690518
申请日：2017-08-30
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Shigehiko Mori , Takeshi Gotanda , Haruhi Oooka , Kenji Todori
Abstract: The present embodiments provide a flexible, lightweight and highly efficient photoelectric conversion device and further provide a manufacturing method thereof. The photoelectric conversion device according to the embodiment comprises a laminate structure of a substrate, an ITO electrode, a photoelectric conversion layer and a counter electrode. When subjected to surface X-ray diffraction analysis, the ITO electrode shows an X-ray diffraction profile characterized in that the peak at a diffraction peak position in the range of 2θ=30.6±0.5° has a half-width of 1.0° or less. The ITO electrode in the device can be formed by forming an amorphous-phase ITO film on the substrate and then by subjecting the film to annealing treatment at a temperature of 200° or less.
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公开(公告)号：US10236322B2
公开(公告)日：2019-03-19
申请号：US15067876
申请日：2016-03-11
Applicant: Kabushiki Kaisha Toshiba
Inventor： Atsuko Iida , Takeshi Gotanda , Hideyuki Nakao , Haruhi Oooka , Rumiko Hayase , Shigehiko Mori , Kenji Todori
IPC: H01L27/30 , H01L51/00 , H01L51/44 , H01L31/046 , H01L31/048 , H01L31/0463 , H01L31/0465
Abstract: A solar cell module according to an embodiment includes: a light transmissive first substrate; a second substrate; at least one cell array disposed between the first substrate and the second substrate, the cell array including a plurality of cells arranged, each of the cells including a first electrode disposed on the first substrate, an organic photoelectric conversion film disposed on the first electrode, and a second electrode disposed on the organic photoelectric conversion film; a plurality of light transmissive partition walls disposed at portions on the first substrate, the portions being located between adjacent ones of the cells and at both end portions of the cell array; and a first resin film disposed between the second substrate and each of the cells between adjacent ones of the partition walls, the cells being connected in series.
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公开(公告)号：US09905766B2
公开(公告)日：2018-02-27
申请号：US15075740
申请日：2016-03-21
Applicant: Kabushiki Kaisha Toshiba
Inventor： Yoshihiko Nakano , Shigehiko Mori , Takeshi Gotanda , Fumihiko Aiga , Rumiko Hayase
CPC classification number: H01L51/0036 , C08G61/126 , C08G2261/12 , C08G2261/122 , C08G2261/124 , C08G2261/1412 , C08G2261/1426 , C08G2261/1428 , C08G2261/146 , C08G2261/149 , C08G2261/228 , C08G2261/3223 , C08G2261/3243 , C08G2261/414 , C08G2261/91 , H01L51/4253 , Y02E10/549
Abstract: A polymer of an embodiment includes a repeating unit containing at least one bivalent group selected from the following formula (1) and the following formula (2). In the formulas (1) and (2), R is hydrogen, fluorine, an alkyl group, an aryl group, a heteroaryl group, or the like. X and Y are each an alkanoyl group, an aminocarbonyl group, an alkylsulfonyl group, or the like. Ar is an aryl group or a heteroaryl group.
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Patent Agency Ranking
公开(公告)号：US20150168825A1
公开(公告)日：2015-06-18
申请号：US14571385
申请日：2014-12-16
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Naomi Shida , Kenji Todori , Shigehiko Mori , Reiko Yoshimura , Hiroyuki Kashiwagi , Ikuo Yoneda , Tsukasa Tada
CPC classification number: G03F1/76 , G03F1/38 , G03F1/80 , G03F7/16 , G03F7/20 , G03F7/201 , G03F7/40 , G03F7/7035 , H01L21/3065 , H01L21/3086
Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
Abstract translation: 根据实施例的近场曝光掩模包括：基板; 具有凹凸的凹凸结构，形成在基板的一个面上; 至少布置在每个凸起的尖端部分上的近场光产生膜，所述近场光产生膜是包含选自Au，Al，Ag，Cu，Cr中的至少一种元素的层 ，Sb，W，Ni，In，Ge，Sn，Pb，Zn，Pd和C，或由这些材料中的一些形成的层形成的膜堆叠; 和填充在每个凹部中的树脂。
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公开(公告)号：US09634252B2
公开(公告)日：2017-04-25
申请号：US15072834
申请日：2016-03-17
Applicant: Kabushiki Kaisha Toshiba
Inventor： Yoshihiko Nakano , Shigehiko Mori , Takeshi Gotanda , Fumihiko Aiga , Rumiko Hayase
CPC classification number: H01L51/0036 , C08G61/12 , C08G61/126 , C08G75/00 , C08G75/02 , C08G2261/41 , C08G2261/51 , H01L51/4253 , Y02E10/549
Abstract: A polymer of an embodiment includes a repeating unit containing a bivalent group represented by the following formula (1). R is hydrogen, halogen, an alkyl group, an alkanoyl group, an aryl group, a heteroaryl group, or the like. X is oxygen, sulfur, selenium, or the like. Y and Z each is a bivalent group selected from a carbonyl group, a sulfinyl group, and a sulfonyl group. However, a case where Y and Z are both the carbonyl groups is excluded.
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公开(公告)号：US20160276593A1
公开(公告)日：2016-09-22
申请号：US15072772
申请日：2016-03-17
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Yoshihiko NAKANO , Shigehiko Mori , Takeshi Gotanda , Rumiko Hayase
CPC classification number: H01L51/0036 , C08G75/00 , C08G2261/41 , C08G2261/51 , H01L51/0043 , H01L51/42 , H01L51/4253 , Y02E10/549
Abstract: A polymer of an embodiment includes a recurring unit containing at least one bivalent group selected from among a formula (1), a formula (2), a formula (3), and a formula (4). Z1 indicates carbon having an R1 group, nitrogen, or the like. Z2 indicates oxygen, sulfur, selenium, nitrogen having an R2 group, or the like. The R1 and R2 groups indicate hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, or the like, X indicates oxygen, sulfur, selenium, or the like.
Abstract translation: Z1表示具有R 1基团，氮原子等的碳。 Z2表示氧，硫，硒，具有R2基团的氮等。 R 1和R 2基团表示氢，取代或未取代的烷基，取代或未取代的芳基，取代或未取代的杂芳基等，X表示氧，硫，硒等。
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公开(公告)号：US20130260290A1
公开(公告)日：2013-10-03
申请号：US13755188
申请日：2013-01-31
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Naomi Shida , Kenji Todori , Shigehiko Mori , Reiko Yoshimura , Hiroyuki Kashiwagi , Ikuo Yoneda , Tsukasa Tada
CPC classification number: G03F1/76 , G03F1/38 , G03F1/80 , G03F7/16 , G03F7/20 , G03F7/201 , G03F7/40 , G03F7/7035 , H01L21/3065 , H01L21/3086
Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
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公开(公告)号：US10950391B2
公开(公告)日：2021-03-16
申请号：US16599146
申请日：2019-10-11
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Shigehiko Mori , Hideyuki Nakao , Takeshi Gotanda , Haruhi Oooka , Kenji Todori , Kenji Fujinaga
IPC: H01G9/20 , H01L51/00 , H01G9/00 , H01L51/44 , H01L51/42 , H01L21/67 , H01L29/84 , H01L23/40 , H01L21/447 , H01L21/603 , H01L21/768 , H01L21/60 , H01L21/322 , H01L21/66
Abstract: A method for manufacturing a photoelectric conversion device, that includes: forming a laminate structure of a substrate, a transparent electrode, an active layer produced by wet-coating, and a counter electrode, stacked in this order; and thereafter forming a cavity by: (a) pressing an adhesive material just against a defect formed on the surface of said counter electrode, and then peeling off said adhesive material together with said defect and the peripheral part thereof; or (b) sucking a defect formed on the surface of said counter electrode, so as to remove said defect and the peripheral part thereof, where said cavity penetrates through the counter electrode and unreached to the transparent electrode.
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