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    Pattern forming method
    2.
    发明授权
    Pattern forming method 有权
    图案形成方法

    公开(公告)号：US09588418B2

    公开(公告)日：2017-03-07

    申请号：US14571385

    申请日：2014-12-16

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Naomi Shida ,  Kenji Todori ,  Shigehiko Mori ,  Reiko Yoshimura ,  Hiroyuki Kashiwagi ,  Ikuo Yoneda ,  Tsukasa Tada

    IPC: G03F1/38 ,  G03F7/20 ,  G03F1/76 ,  G03F1/80

    CPC classification number: G03F1/76 ,  G03F1/38 ,  G03F1/80 ,  G03F7/16 ,  G03F7/20 ,  G03F7/201 ,  G03F7/40 ,  G03F7/7035 ,  H01L21/3065 ,  H01L21/3086

    Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.

    Abstract translation: 根据实施例的近场曝光掩模包括：基板; 具有凹凸的凹凸结构，形成在基板的一个面上; 至少布置在每个凸起的尖端部分上的近场光产生膜，所述近场光产生膜是包含选自Au，Al，Ag，Cu，Cr中的至少一种元素的层 ，Sb，W，Ni，In，Ge，Sn，Pb，Zn，Pd和C，或由这些材料中的一些形成的层形成的膜堆叠; 和填充在每个凹部中的树脂。

    Fine processing method, fine processing apparatus, and recording medium with fine processing program recorded thereon
    4.
    发明授权
    Fine processing method, fine processing apparatus, and recording medium with fine processing program recorded thereon 有权
    精加工方法，精细加工装置以及记录有精加工程序的记录介质

    公开(公告)号：US09377777B2

    公开(公告)日：2016-06-28

    申请号：US14213770

    申请日：2014-03-14

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Yasutada Nakagawa ,  Takuya Kono ,  Ikuo Yoneda ,  Masayuki Hatano

    IPC: B29C43/58 ,  G05B19/418 ,  G03F7/16 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

    CPC classification number: G05B19/418 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/16

    Abstract: According to one embodiment, a fine processing method includes determining a resist amount required for each first region of a pattern formation surface and a total amount of resist. The method include dividing the total amount of resist by a volume of one resist drop to determine the resist drops total number. The method include determining a provisional position for the resist drop of the total number. The method include assigning the each first region to nearest one resist drop, and partitioning again the pattern formation surface into second regions assigned to the each resist drop. The method include determining a divided value by dividing the volume of the one resist drop by the required total amount of resist determined. The method include finalizing a final position of the each resist drop, if a distribution of the divided value in the pattern formation surface falls within a target range.

    Abstract translation: 根据一个实施例，精细处理方法包括确定图案形成表面的每个第一区域和抗蚀剂总量所需的抗蚀剂量。 该方法包括将抗蚀剂的总量除以一个抗蚀剂滴的体积以确定抗蚀剂滴数总数。 该方法包括确定总数的抗蚀剂落下的临时位置。 该方法包括将每个第一区域分配给最接近的一个抗蚀剂层，以及再次将图案形成表面分割成分配给每个抗蚀剂层的第二区域。 该方法包括通过将一个抗蚀剂液滴的体积除以所需的抗蚀剂总量确定分割值。 如果图案形成表面中的分割值的分布落在目标范围内，则该方法包括确定每个抗蚀剂液滴的最终位置。

    IMPRINT APPARATUS, IMPRINT METHOD, AND ARTICLE MANUFACTURING METHOD
    5.
    发明申请
    IMPRINT APPARATUS, IMPRINT METHOD, AND ARTICLE MANUFACTURING METHOD 审中-公开
    IMPRINT APPARATUS，IMPRINT METHOD，AND ARTICLE MANUFACTURING METHOD

    公开(公告)号：US20150014876A1

    公开(公告)日：2015-01-15

    申请号：US14309960

    申请日：2014-06-20

    Applicant: CANON KABUSHIKI KAISHA ,  Molecular Imprints, Inc. ,  KABUSHIKI KAISHA TOSHIBA

    Inventor： Keiji Yamashita ,  Yutaka Watanabe ,  Brian Fletcher ,  Gerard Schmid ,  Niyaz Khusnatdinov ,  Se-Hyuk Im ,  Takuya Kono ,  Masayuki Hatano ,  Ikuo Yoneda

    IPC: B29C59/02 ,  B29C43/34

    CPC classification number: B29C43/34 ,  B29C31/045 ,  B29C2043/025 ,  B29C2043/3438 ,  B29C2043/5875 ,  G03F7/0002

    Abstract: Provided is an imprint apparatus that applies a resin to several locations on a substrate, brings the resin and a mold into contact, and transfers a contoured pattern formed in the mold to the resin, comprising: a controller that sets a principal axis direction according to the contoured pattern and determines the application positions of the resin based on the principal axis direction that has been set such that the distances between resin drops that have been applied so as to be separated in the principal axis direction is larger than the distances between resin drops that have been applied so as to be separated in a direction that is perpendicular to the principal axis direction; and a dispenser that applies the resin based on the application position that has been determined.

    Abstract translation: 提供了一种将树脂施加到基板上的多个位置的印记装置，使树脂和模具接触，并将形成在模具中的成型图案传送到树脂，包括：控制器，其根据 轮廓图案，并且基于被设定为使得在主轴方向上被分离的树脂滴之间的距离大于树脂滴的距离的主轴方向确定树脂的施加位置 已被施加以沿与主轴方向垂直的方向分离; 以及基于已经确定的施加位置施加树脂的分配器。

    Pattern forming method and pattern forming apparatus
    8.
    发明授权
    Pattern forming method and pattern forming apparatus 有权
    图案形成方法和图案形成装置

    公开(公告)号：US09403316B2

    公开(公告)日：2016-08-02

    申请号：US14311404

    申请日：2014-06-23

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Ikuo Yoneda

    IPC: B29C59/02 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/00 ,  B29C59/00 ,  B29L31/34

    CPC classification number: B29C59/022 ,  B29C59/002 ,  B29C2059/023 ,  B29L2031/34 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L22/12

    Abstract: According to an aspect of the present invention, there is provided a pattern forming apparatus in which a mold having a pattern is brought into contact with an imprinting material on a substrate to transfer the pattern, the apparatus including: a holding part configured to hold the mold; a moving part configured to move the holding part so that the mold is brought into contact with the imprinting material on the substrate and that the mold is removed therefrom; and a control part configured to control so that at least one of conditions of removing the mold can be changed based on conditions of the pattern formed in the mold, the conditions including a rate and an angle of removing the mold.

    Abstract translation: 根据本发明的一个方面，提供一种图案形成装置，其中具有图案的模具与衬底上的压印材料接触以传送图案，该装置包括：保持部件，其构造成保持 模子; 移动部件，其构造成移动所述保持部，使得所述模具与所述基板上的所述压印材料接触，并且所述模具从其移除; 以及控制部，其被构造成基于所述模具中形成的图案的条件，所述条件包括除去所述模具的速度和角度来进行控制，使得可以改变去除所述模具的至少一个条件。

    NEAR-FIELD EXPOSURE MASK AND PATTERN FORMING METHOD
    9.
    发明申请
    NEAR-FIELD EXPOSURE MASK AND PATTERN FORMING METHOD 有权
    近场曝光掩模和图案形成方法

    公开(公告)号：US20150168825A1

    公开(公告)日：2015-06-18

    申请号：US14571385

    申请日：2014-12-16

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Naomi Shida ,  Kenji Todori ,  Shigehiko Mori ,  Reiko Yoshimura ,  Hiroyuki Kashiwagi ,  Ikuo Yoneda ,  Tsukasa Tada

    IPC: G03F1/76 ,  G03F1/80

    CPC classification number: G03F1/76 ,  G03F1/38 ,  G03F1/80 ,  G03F7/16 ,  G03F7/20 ,  G03F7/201 ,  G03F7/40 ,  G03F7/7035 ,  H01L21/3065 ,  H01L21/3086

    Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.

    Abstract translation: 根据实施例的近场曝光掩模包括：基板; 具有凹凸的凹凸结构，形成在基板的一个面上; 至少布置在每个凸起的尖端部分上的近场光产生膜，所述近场光产生膜是包含选自Au，Al，Ag，Cu，Cr中的至少一种元素的层 ，Sb，W，Ni，In，Ge，Sn，Pb，Zn，Pd和C，或由这些材料中的一些形成的层形成的膜堆叠; 和填充在每个凹部中的树脂。

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