公开(公告)号：US20160064262A1

公开(公告)日：2016-03-03

申请号：US14656762

申请日：2015-03-13

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihisa OOSAKI ,  Mitsuyoshi MEGURO ,  Shouji HONDA ,  Yuuji IDE ,  Masato KURITA ,  Tomofumi INOUE

IPC: H01L21/67 ,  C23C16/52 ,  H01L21/02 ,  C23C16/455 ,  H01L21/66 ,  C23C16/50 ,  C23C16/46

CPC classification number: H01L21/67253 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/509 ,  C23C16/52 ,  H01L22/12 ,  H01L22/20

Abstract: The semiconductor manufacturing apparatus includes a film forming part and a control part. The film forming part forms a stacked film on a semiconductor substrate. The stacked film has a lower layer and an upper layer on the lower layer. The control part controls the film forming part. The control part controls the film forming part to form the upper layer film in which an inclination of a film thickness is inverted with respect to that of the lower layer film.

Abstract translation: 半导体制造装置包括成膜部和控制部。 成膜部在半导体基板上形成层叠膜。 层叠膜在下层具有下层和上层。 控制部控制成膜部。 控制部分控制成膜部分以形成相对于下层膜的膜厚反转倾斜的上层膜。

公开(公告)号：US20170263613A1

公开(公告)日：2017-09-14

申请号：US15254014

申请日：2016-09-01

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Atsushi MURAKOSHI ,  Yasuhito YOSHIMIZU ,  Tomofumi INOUE ,  Tatsuya KATO ,  Yuta WATANABE ,  Fumitaka ARAI

IPC: H01L27/115 ,  H01L21/28 ,  H01L29/66 ,  H01L29/792 ,  H01L29/423

CPC classification number: H01L27/1157 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/4234 ,  H01L29/42348 ,  H01L29/42352 ,  H01L29/66825 ,  H01L29/7926

Abstract: According to one embodiment, a semiconductor device includes a substrate and a semiconductor layer. The device further includes a first electrode layer that is provided on a side surface of the semiconductor layer with a first insulating film interposed therebetween. The device further includes a charge storage layer provided on a side surface of the first electrode layer with the second insulating film interposed therebetween.