公开(公告)号：US11424393B2

公开(公告)日：2022-08-23

申请号：US16905977

申请日：2020-06-19

Applicant: KAISTAR Lighting (Xiamen) Co., Ltd.

Inventor： Jing-Qiong Zhang ,  Ben-Jie Fan ,  Hung-Chih Yang ,  Shuen-Ta Teng

IPC: H01L33/50 ,  H01L33/08 ,  H01L33/06

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.

公开(公告)号：US11923486B2

公开(公告)日：2024-03-05

申请号：US17868995

申请日：2022-07-20

Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.

Inventor： Jing-Qiong Zhang ,  Ben-Jie Fan ,  Hung-Chih Yang ,  Shuen-Ta Teng

IPC: H01L33/50 ,  H01L33/08 ,  H01L33/06

CPC classification number: H01L33/504 ,  H01L33/06 ,  H01L33/08

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.

公开(公告)号：US11038079B2

公开(公告)日：2021-06-15

申请号：US16459837

申请日：2019-07-02

Applicant: KAISTAR Lighting (Xiamen) Co., Ltd.

Inventor： Hung-Chih Yang ,  Xiao-Kun Lin ,  Jian-Ran Huang ,  Ben-Jie Fan ,  Ho-Chien Chen ,  Chan-Yang Lu ,  Shuen-Ta Teng ,  Cheng-Chang Hsieh

IPC: H01L33/00 ,  H01L33/20

Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes a substrate, an epitaxial blocking layer, and a light-emitting epitaxial structure. The substrate has a surface, in which the surface includes a plurality of protruding parts and a plurality of recess parts relative to the protruding parts. The epitaxial blocking layer disposed on the substrate covers the recess parts and exposes the protruding parts. The light-emitting epitaxial structure disposed on the substrate is connected to the protruding parts and is disposed above the recess parts. The light-emitting epitaxial structure is formed by using the protruding parts as a growth surface thereof so as to have a better crystalline quality.

公开(公告)号：US11777053B2

公开(公告)日：2023-10-03

申请号：US17590098

申请日：2022-02-01

Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.

Inventor： Ben-Jie Fan ,  Jing-Qiong Zhang ,  Yi-Qun Li ,  Hung-Chih Yang ,  Tsung-Chieh Lin ,  Ho-Chien Chen ,  Shuen-Ta Teng ,  Cheng-Chang Hsieh

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/50

CPC classification number: H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/502

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

公开(公告)号：US11257980B2

公开(公告)日：2022-02-22

申请号：US16629367

申请日：2019-11-12

Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.

Inventor： Ben-Jie Fan ,  Jing-Qiong Zhang ,  Yi-Qun Li ,  Hung-Chih Yang ,  Tsung-Chieh Lin ,  Ho-Chien Chen ,  Shuen-Ta Teng ,  Cheng-Chang Hsieh

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/50

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.