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公开(公告)号：US20170271185A1
公开(公告)日：2017-09-21
申请号：US15500221
申请日：2015-07-31
发明人： Jean-Pierre LOCQUET , Chen-Yi SU
CPC分类号： H01L21/67253 , C23C14/0021 , C23C14/548 , C23C14/5806 , C30B23/002 , C30B23/02 , C30B29/16 , C30B29/20 , C30B33/02 , H01L21/02178 , H01L21/022 , H01L21/02318
摘要： A deposition device for providing a thin film on a substrate. The device comprises a material source for providing at least one first metallic element which does not re-evaporate substantially from the substrate under particular growth conditions, at least one second metallic element or metal based molecule which does re-evaporate substantially from the substrate under the same growth conditions, and a component suitable for forming an at least one first compound with the at least one first metallic element and an at least one second compound with the at least one second metallic element or metal based molecule. The device comprises a controller configured to control the growth conditions, and the amounts of the at least one first metallic element, the at least one second metallic element or metal based molecule, and the component so as to obtain a substantially stoichiometric thin film.
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公开(公告)号：US20170263475A1
公开(公告)日：2017-09-14
申请号：US15500213
申请日：2015-07-31
发明人： Jean-Pierre LOCQUET , Chen-Yi SU
IPC分类号： H01L21/67 , H01L21/02 , H01L21/687 , C23C14/58 , C23C16/56
CPC分类号： H01L21/67109 , C23C14/228 , C23C14/5806 , C23C16/56 , H01L21/02175 , H01L21/02178 , H01L21/02266 , H01L21/02337 , H01L21/02356 , H01L21/02527 , H01L21/02529 , H01L21/02565 , H01L21/02631 , H01L21/02689 , H01L21/68714
摘要： A heating device for heating the surface of a substrate. The heating device comprises a gas source comprising an inert material supply inert under the operating conditions of the heating device, the gas source being adapted for supplying a hot jet of a gas comprising at least elements of said inert material on the substrate. The gas source is adapted for heating the hot jet of the gas to a temperature above 1500° C.
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