公开(公告)号：US20220177727A1

公开(公告)日：2022-06-09

申请号：US17415703

申请日：2019-07-11

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  Jun Ha HWANG ,  Kwang Soo PARK ,  Hae Won YANG

IPC: C09G1/02

Abstract: The present disclosure relates to a polishing slurry composition for an STI process and, more specifically, to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a polymer having an amide bond, and a polysilicon film polishing barrier inclusive of a monomer having three or more chains linked to one or more atoms.

公开(公告)号：US20220064489A1

公开(公告)日：2022-03-03

申请号：US17415705

申请日：2019-07-03

Applicant: KCTECH CO., LTD.

Inventor： Soo Wan CHOI ,  Jung Yoon KIM ,  Nak Hyun CHOI ,  Hae Won YANG

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  C09G1/04

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises a polishing solution containing polishing particles; and an additive solution containing a non-ionic polymer and a polishing selectivity controller. The polishing slurry composition of the present disclosure has a high polishing rate for silicon oxide films and polysilicon films, leaves no residues after shallow trench isolation (STI) polishing of semiconductor devices, and can reduce the amount of silicon oxide film dishing and decrease scratches.

公开(公告)号：US20210079262A1

公开(公告)日：2021-03-18

申请号：US16954350

申请日：2018-11-13

Applicant: KCTECH CO., LTD.

Inventor： Hae Won YANG ,  Jun Ha HWANG ,  Jung Yoon KIM ,  Kwang Soo PARK

IPC: C09G1/02 ,  H01L21/321

Abstract: The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.

公开(公告)号：US20220064488A1

公开(公告)日：2022-03-03

申请号：US17415704

申请日：2019-11-04

Applicant: KCTECH CO., LTD.

Inventor： Nak Hyun CHOI ,  Jung Yoon KIM ,  Hae Won YANG ,  Soo Wan CHOI

IPC: C09G1/02 ,  C09G1/04

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.

公开(公告)号：US20210163785A1

公开(公告)日：2021-06-03

申请号：US16954338

申请日：2018-11-13

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  Jun Ha HWANG ,  Kwang Soo PARK ,  Hae Won YANG

IPC: C09G1/02 ,  H01L21/762 ,  H01L21/3105 ,  C08L77/00 ,  C08G73/02

Abstract: The present invention relates to a polishing slurry composition for an STI process and, more particularly, to a polishing slurry composition for an STI process, the composition comprising: a polishing solution including polishing particles; and an additive solution containing a polysilicon film polishing barrier inclusive of a polymer having an amide bond.