公开(公告)号：US20210380842A1

公开(公告)日：2021-12-09

申请号：US17293236

申请日：2019-05-29

Applicant: KCTECH CO., LTD.

Inventor： Kwang Soo PARK ,  Jun Ha HWANG ,  Soo Wan CHOI ,  Nak Hyun CHOI

IPC: C09G1/02 ,  C09K3/14

Abstract: The present disclosure relates to a polishing slurry composition and a method of producing the same. The polishing slurry composition according to one embodiment of the present disclosure includes: abrasive particles dispersed so as to have positively-charged particle surfaces; a first dispersant including a nonionic linear polymer; and a second dispersant including an anionic coiling polymer, wherein the polishing slurry composition satisfies the following Expressions 1 and 2: [Expression 1] 4≤log(milling energy)

公开(公告)号：US20220064489A1

公开(公告)日：2022-03-03

申请号：US17415705

申请日：2019-07-03

Applicant: KCTECH CO., LTD.

Inventor： Soo Wan CHOI ,  Jung Yoon KIM ,  Nak Hyun CHOI ,  Hae Won YANG

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  C09G1/04

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises a polishing solution containing polishing particles; and an additive solution containing a non-ionic polymer and a polishing selectivity controller. The polishing slurry composition of the present disclosure has a high polishing rate for silicon oxide films and polysilicon films, leaves no residues after shallow trench isolation (STI) polishing of semiconductor devices, and can reduce the amount of silicon oxide film dishing and decrease scratches.

公开(公告)号：US20210179891A1

公开(公告)日：2021-06-17

申请号：US17121770

申请日：2020-12-15

Applicant: KCTECH CO., LTD.

Inventor： Kwang Soo PARK ,  Jun Ha HWANG ,  Jung Yoon KIM ,  Nak Hyun CHOI

IPC: C09G1/02 ,  C09G1/16 ,  H01L21/321

Abstract: A polishing slurry composition for a shallow trench isolation (STI) process is provided. The polishing slurry composition includes abrasive particles, a nonionic polymer, and a polar amino acid.

公开(公告)号：US20220064488A1

公开(公告)日：2022-03-03

申请号：US17415704

申请日：2019-11-04

Applicant: KCTECH CO., LTD.

Inventor： Nak Hyun CHOI ,  Jung Yoon KIM ,  Hae Won YANG ,  Soo Wan CHOI

IPC: C09G1/02 ,  C09G1/04

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.

公开(公告)号：US20190211245A1

公开(公告)日：2019-07-11

申请号：US16331137

申请日：2017-06-21

Applicant: KCTECH CO., LTD.

Inventor： Nak Hyun CHOI ,  Kwang Soo PARK ,  Jung Yoon KIM ,  Jun Ha HWANG

IPC: C09K3/14

CPC classification number: C09K3/1436 ,  C09G1/02 ,  C09K3/14 ,  C09K3/1409

Abstract: The present invention relates to surface-modified colloidal ceria abrasive particles, a preparation method therefor, and a polishing slurry composition containing the same. According to one embodiment of the present invention, the surface-modified colloidal ceria abrasive particles comprise: colloidal ceria abrasive particles; and cerium atoms and hydroxyl groups (—OH) formed on the surface of the colloidal ceria abrasive particles.