公开(公告)号：US20220177727A1

公开(公告)日：2022-06-09

申请号：US17415703

申请日：2019-07-11

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  Jun Ha HWANG ,  Kwang Soo PARK ,  Hae Won YANG

IPC: C09G1/02

Abstract: The present disclosure relates to a polishing slurry composition for an STI process and, more specifically, to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a polymer having an amide bond, and a polysilicon film polishing barrier inclusive of a monomer having three or more chains linked to one or more atoms.

公开(公告)号：US20210179891A1

公开(公告)日：2021-06-17

申请号：US17121770

申请日：2020-12-15

Applicant: KCTECH CO., LTD.

Inventor： Kwang Soo PARK ,  Jun Ha HWANG ,  Jung Yoon KIM ,  Nak Hyun CHOI

IPC: C09G1/02 ,  C09G1/16 ,  H01L21/321

Abstract: A polishing slurry composition for a shallow trench isolation (STI) process is provided. The polishing slurry composition includes abrasive particles, a nonionic polymer, and a polar amino acid.

公开(公告)号：US20210079262A1

公开(公告)日：2021-03-18

申请号：US16954350

申请日：2018-11-13

Applicant: KCTECH CO., LTD.

Inventor： Hae Won YANG ,  Jun Ha HWANG ,  Jung Yoon KIM ,  Kwang Soo PARK

IPC: C09G1/02 ,  H01L21/321

Abstract: The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.

公开(公告)号：US20240158667A1

公开(公告)日：2024-05-16

申请号：US18281558

申请日：2022-03-07

Applicant: KCTECH CO., LTD.

Inventor： Jung Hun KIM ,  Jun Ha HWANG ,  O Seong KWON

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: The present disclosure relates to a polishing slurry composition and to a polishing slurry composition including nanoceria abrasive particles and a water-soluble compound including an intramolecular hydrophilic group, and further selectively including at least one from among an amphoteric compound including an intramolecular carboxyl group and amine group, a surface modifier including an organic acid, and a pH adjuster.

公开(公告)号：US20210380842A1

公开(公告)日：2021-12-09

申请号：US17293236

申请日：2019-05-29

Applicant: KCTECH CO., LTD.

Inventor： Kwang Soo PARK ,  Jun Ha HWANG ,  Soo Wan CHOI ,  Nak Hyun CHOI

IPC: C09G1/02 ,  C09K3/14

Abstract: The present disclosure relates to a polishing slurry composition and a method of producing the same. The polishing slurry composition according to one embodiment of the present disclosure includes: abrasive particles dispersed so as to have positively-charged particle surfaces; a first dispersant including a nonionic linear polymer; and a second dispersant including an anionic coiling polymer, wherein the polishing slurry composition satisfies the following Expressions 1 and 2: [Expression 1] 4≤log(milling energy)

公开(公告)号：US20210163785A1

公开(公告)日：2021-06-03

申请号：US16954338

申请日：2018-11-13

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  Jun Ha HWANG ,  Kwang Soo PARK ,  Hae Won YANG

IPC: C09G1/02 ,  H01L21/762 ,  H01L21/3105 ,  C08L77/00 ,  C08G73/02

Abstract: The present invention relates to a polishing slurry composition for an STI process and, more particularly, to a polishing slurry composition for an STI process, the composition comprising: a polishing solution including polishing particles; and an additive solution containing a polysilicon film polishing barrier inclusive of a polymer having an amide bond.

公开(公告)号：US20190316003A1

公开(公告)日：2019-10-17

申请号：US16302604

申请日：2017-04-14

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  Jun Ha HWANG ,  Sun Kyoung KIM ,  Kwang Soo PARK

IPC: C09G1/02 ,  C09K13/00 ,  C09K3/14

Abstract: The present invention relates to a slurry composition for polishing a high stepped region. The slurry composition for polishing a high stepped region according to an embodiment of the present invention comprises: a polishing liquid containing metal oxide abrasive particles dispersed by positive charges; and an additive liquid containing a polymer comprising at least one element capable of being activated as a positive charge, wherein the polishing selection ratio of the stepped region removal rate in an oxide film pattern wafer having convex portions and concave portions and the stepped region removal rate in an oxide film flat wafer is at least 5:1.

公开(公告)号：US20190211245A1

公开(公告)日：2019-07-11

申请号：US16331137

申请日：2017-06-21

Applicant: KCTECH CO., LTD.

Inventor： Nak Hyun CHOI ,  Kwang Soo PARK ,  Jung Yoon KIM ,  Jun Ha HWANG

IPC: C09K3/14

CPC classification number: C09K3/1436 ,  C09G1/02 ,  C09K3/14 ,  C09K3/1409

Abstract: The present invention relates to surface-modified colloidal ceria abrasive particles, a preparation method therefor, and a polishing slurry composition containing the same. According to one embodiment of the present invention, the surface-modified colloidal ceria abrasive particles comprise: colloidal ceria abrasive particles; and cerium atoms and hydroxyl groups (—OH) formed on the surface of the colloidal ceria abrasive particles.