POLISHING SLURRY COMPOSITION FOR STI PROCESS

    公开(公告)号:US20220177727A1

    公开(公告)日:2022-06-09

    申请号:US17415703

    申请日:2019-07-11

    Abstract: The present disclosure relates to a polishing slurry composition for an STI process and, more specifically, to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a polymer having an amide bond, and a polysilicon film polishing barrier inclusive of a monomer having three or more chains linked to one or more atoms.

    SLURRY COMPOSITION FOR POLISHING HIGH STEPPED REGION

    公开(公告)号:US20190316003A1

    公开(公告)日:2019-10-17

    申请号:US16302604

    申请日:2017-04-14

    Abstract: The present invention relates to a slurry composition for polishing a high stepped region. The slurry composition for polishing a high stepped region according to an embodiment of the present invention comprises: a polishing liquid containing metal oxide abrasive particles dispersed by positive charges; and an additive liquid containing a polymer comprising at least one element capable of being activated as a positive charge, wherein the polishing selection ratio of the stepped region removal rate in an oxide film pattern wafer having convex portions and concave portions and the stepped region removal rate in an oxide film flat wafer is at least 5:1.

    POLISHING SLURRY COMPOSITION AND METHOD FOR PRODUCING SAME

    公开(公告)号:US20210380842A1

    公开(公告)日:2021-12-09

    申请号:US17293236

    申请日:2019-05-29

    Abstract: The present disclosure relates to a polishing slurry composition and a method of producing the same. The polishing slurry composition according to one embodiment of the present disclosure includes: abrasive particles dispersed so as to have positively-charged particle surfaces; a first dispersant including a nonionic linear polymer; and a second dispersant including an anionic coiling polymer, wherein the polishing slurry composition satisfies the following Expressions 1 and 2: [Expression 1] 4≤log(milling energy)

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