公开(公告)号：US10403443B2

公开(公告)日：2019-09-03

申请号：US14871402

申请日：2015-09-30

Applicant: KEMET Electronics Corporation

Inventor： Antony P. Chacko ,  Randolph S. Hahn ,  Pablo Antonio Ruiz

IPC: H01G9/00 ,  C25D7/00 ,  C25D11/26 ,  H01G9/025 ,  H01G9/048 ,  H01G9/012 ,  H01G9/15 ,  C25D11/04

Abstract: A solid electrolytic capacitor and method for forming a solid electrolytic capacitor with high temperature leakage stability is described. The solid electrolytic capacitor has improved leakage current and is especially well suited for high temperature environments such as down-hole applications.

公开(公告)号：US08896985B2

公开(公告)日：2014-11-25

申请号：US13863451

申请日：2013-04-16

Applicant: Kemet Electronics Corporation

Inventor： Antony P. Chacko ,  Randolph S. Hahn

IPC: H01G9/00 ,  H01G9/012 ,  H01G9/042 ,  H01G9/15 ,  H01G2/06

CPC classification number: H01G9/0032 ,  H01G2/065 ,  H01G9/012 ,  H01G9/0425 ,  H01G9/15

Abstract: A capacitor with an anode, a dielectric on the anode and a cathode on the dielectric. A blocking layer is on the cathode. A metal filled layer is on said blocking layer and a plated layer is on the metal filled layer.

Abstract translation: 具有阳极的电容器，阳极上的电介质和电介质上的阴极。 阻挡层在阴极上。 金属填充层位于所述阻挡层上，镀层位于金属填充层上。

公开(公告)号：US20130251891A1

公开(公告)日：2013-09-26

申请号：US13863451

申请日：2013-04-16

Applicant: KEMET ELECTRONICS CORPORATION

Inventor： Antony P. Chacko ,  Randolph S. Hahn

IPC: H01G9/00

CPC classification number: H01G9/0032 ,  H01G2/065 ,  H01G9/012 ,  H01G9/0425 ,  H01G9/15

Abstract: A capacitor with an anode, a dielectric on the anode and a cathode on the dielectric. A blocking layer is on the cathode. A metal filled layer is on said blocking layer and a plated layer is on the metal filled layer.

Abstract translation: 具有阳极的电容器，阳极上的电介质和电介质上的阴极。 阻挡层在阴极上。 金属填充层位于所述阻挡层上，镀层位于金属填充层上。

公开(公告)号：US11361908B2

公开(公告)日：2022-06-14

申请号：US17089875

申请日：2020-11-05

Applicant: KEMET Electronics Corporation

Inventor： Antony Chacko ,  Randolph S. Hahn ,  David Jacobs ,  Brandon Summey

IPC: H01G9/10 ,  H01G9/00 ,  H01G9/15 ,  H01G9/04 ,  H01G9/042

Abstract: An improved method of forming a capacitor, and capacitor formed thereby, is described. The method comprises forming an anode with an anode lead extending therefrom, forming a dielectric on the anode, forming a solid cathode layer on the dielectric and forming a hermetic encasement on the capacitor wherein the hermetic encasement comprises a conformal non-conductive layer.

公开(公告)号：US20180211790A1

公开(公告)日：2018-07-26

申请号：US15926391

申请日：2018-03-20

Applicant: KEMET Electronics Corporation

Inventor： Randolph S. Hahn ,  Jeffrey Poltorak ,  Brandon Summey ,  Antony P. Chacko ,  John T. Kinard ,  Philip M. Lessner

IPC: H01G9/15 ,  H01G9/048

CPC classification number: H01G9/15 ,  H01G9/0036 ,  H01G9/0425 ,  H01G9/048

Abstract: An improved capacitor is provided wherein the improved capacitor has improved ESR. The capacitor has a fluted anode and an anode wire extending from the fluted anode. A dielectric is on the fluted anode. A conformal cathode is on the dielectric and a plated metal layer is on the carbon layer.

公开(公告)号：US09524829B2

公开(公告)日：2016-12-20

申请号：US14595502

申请日：2015-01-13

Applicant: Kemet Electronics Corporation

Inventor： Hong Zhang ,  Qingping Chen ,  Randolph S. Hahn

IPC: H01G9/00 ,  H01G9/012 ,  H01G9/15 ,  H01G9/028

CPC classification number: H01G9/0032 ,  H01G9/0036 ,  H01G9/012 ,  H01G9/028 ,  H01G9/15 ,  Y10T29/417

Abstract: An improved process for forming a capacitor, and improved capacitor formed thereby is described. The process includes: providing an anode comprising a dielectric thereon; applying a first layer of an intrinsically conducting polymer on the dielectric to form a capacitor precursor; applying at least one subsequent layer of an intrinsically conducting polymer on the first layer from a dispersion; and treating the capacitor precursor at a temperature of at least 50° C. no more than 200° C. at a relative humidity of at least 25% up to 100%, or fusing the layered structure by swelling the layered structure with a liquid and at least partially removing the liquid.

公开(公告)号：US20210057167A1

公开(公告)日：2021-02-25

申请号：US17089875

申请日：2020-11-05

Applicant: KEMET Electronics Corporation

Inventor： Antony Chacko ,  Randolph S. Hahn ,  David Jacobs ,  Brandon Summey

IPC: H01G9/10 ,  H01G9/00 ,  H01G9/15 ,  H01G9/04 ,  H01G9/042

Abstract: An improved method of forming a capacitor, and capacitor formed thereby, is described. The method comprises forming an anode with an anode lead extending therefrom, forming a dielectric on the anode, forming a solid cathode layer on the dielectric and forming a hermetic encasement on the capacitor wherein the hermetic encasement comprises a conformal non-conductive layer.

公开(公告)号：US09748043B2

公开(公告)日：2017-08-29

申请号：US13959995

申请日：2013-08-06

Applicant: Kemet Electronics Corporation

Inventor： Antony P. Chacko ,  John E. McConnell ,  Robert Ramsbottom ,  Philip M. Lessner ,  Randolph S. Hahn ,  John Bultitude

IPC: H01G9/048 ,  H01G9/00 ,  H01G9/012 ,  H01G11/26 ,  H01G9/04 ,  H01G9/042

CPC classification number: H01G9/048 ,  H01G9/0029 ,  H01G9/012 ,  H01G9/04 ,  H01G9/0425 ,  H01G11/26 ,  Y10T29/417

Abstract: A solid electrolytic capacitor is described which comprises an anode, a dielectric on the anode and a cathode on the dielectric. A conductive coating is on the cathode wherein the conductive layer comprises an exterior surface of a first high melting point metal. An adjacent layer is provided comprising a second high melting point metal, wherein the first high melting point metal and the second high melting point metal are metallurgically bonded with a low melting point metal.

公开(公告)号：US20150135496A1

公开(公告)日：2015-05-21

申请号：US14490981

申请日：2014-09-19

Applicant: Kemet Electronics Corporation

Inventor： Antony P. Chacko ,  Yang Jin ,  Randolph S. Hahn ,  Yongjian Qiu ,  Philip M. Lessner ,  Keith R. Brenneman

IPC: H01G9/00 ,  B05D1/18

CPC classification number: H01G9/0032 ,  B05D1/185 ,  B82Y99/00 ,  H01G9/0036 ,  H01G9/028 ,  H01G9/0425 ,  H01G9/052 ,  H01G9/15 ,  Y10S977/948 ,  Y10T29/417 ,  Y10T29/43

Abstract: A process for preparing a solid electrolytic capacitor comprising application of coverage enhancing catalyst followed by application of a conducting polymer layer. Coverage enhancing catalyst is removed after coating and curing.

Abstract translation: 一种制备固体电解电容器的方法，包括应用覆盖增强催化剂，然后施加导电聚合物层。 涂层和固化后除去覆盖增强催化剂。

公开(公告)号：US20130250486A1

公开(公告)日：2013-09-26

申请号：US13894679

申请日：2013-05-15

Applicant: Kemet Electronics Corporation

Inventor： Brandon Summey ,  Jeffrey Poltorak ,  Philip M. Lessner ,  Yongjian Qiu ,  Randolph S. Hahn ,  David Jacobs ,  Keith R. Brenneman ,  Albert K. Harrington ,  Chris Stolarski

IPC: H01G9/15 ,  H01G9/00

CPC classification number: H01G9/15 ,  H01G9/0029 ,  H01G9/012 ,  H01G9/048 ,  Y10T29/41 ,  Y10T29/417 ,  Y10T29/43

Abstract: An improved solid electrolytic capacitor and method of forming a solid electrolytic capacitor is described. The method includes forming an anode comprising a valve metal or conductive oxide of a valve metal wherein an anode lead extension protrudes from the anode. A dielectric is formed on the anode and a cathode layer is formed on the dielectric. The anode, dielectric, and cathode layer are encased in a non-conducting material and the anode lead extension is exposed outside of the encasement at a side surface. A conductive metal layer is adhered to the anode lead extension which allows termination preferably by electrically connecting a preformed solid metal terminal, most preferably an L shaped terminal, to the conductive metal layer at the side surface.

Abstract translation: 描述了改进的固体电解电容器和形成固体电解电容器的方法。 该方法包括形成包括阀金属或阀金属的导电氧化物的阳极，其中阳极引线延伸部从阳极伸出。 在阳极上形成电介质，在电介质上形成阴极层。 阳极，电介质和阴极层被封装在非导电材料中，并且阳极引线延伸部暴露在外壳的外侧的侧表面处。 导电金属层粘附到阳极引线延伸部，其优选地通过将预制的固体金属端子，最优选地L形端子电连接到侧表面处的导电金属层来终止。