公开(公告)号：US11647628B2

公开(公告)日：2023-05-09

申请号：US17017385

申请日：2020-09-10

Applicant: Kioxia Corporation

Inventor： Yuta Saito ,  Shinji Mori ,  Keiji Hosotani ,  Daisuke Hagishima ,  Atsushi Takahashi

IPC: H01L27/115 ,  H01L27/11578 ,  H01L27/11568 ,  H01L27/11565

CPC classification number: H01L27/11578 ,  H01L27/11565 ,  H01L27/11568

Abstract: According to one embodiment, a semiconductor memory device includes: a first semiconductor layer; first and second insulating layers in contact with the first semiconductor layer; a second semiconductor layer in contact with the first insulating layer; a third semiconductor layer in contact with the second insulating layer; a first conductor; a third insulating layer in contact with the first conductor; a fourth insulating layer provided between the second semiconductor layer and the third insulating layer; a first charge storage layer provided between the second semiconductor layer and the fourth insulating layer; and a fifth insulating layer provided between the second semiconductor layer and the first charge storage layer. The second semiconductor layer, the first conductor, the third to fifth insulating layers, and the first charge storage layer function as a first memory cell.

公开(公告)号：US11335699B2

公开(公告)日：2022-05-17

申请号：US17136621

申请日：2020-12-29

Applicant: KIOXIA CORPORATION

Inventor： Keiichi Sawa ,  Kazuhiro Matsuo ,  Kazuhisa Matsuda ,  Hiroyuki Yamashita ,  Yuta Saito ,  Shinji Mori ,  Masayuki Tanaka ,  Kenichiro Toratani ,  Atsushi Takahashi ,  Shouji Honda

IPC: H01L27/11582 ,  H01L29/792 ,  H01L27/11578 ,  H01L27/11519 ,  H01L27/1157

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

公开(公告)号：US11862471B2

公开(公告)日：2024-01-02

申请号：US17471684

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Atsushi Takahashi ,  Ayata Harayama ,  Yuya Nagata

IPC: H01L21/3065 ,  H01L21/306 ,  H01J37/305

CPC classification number: H01L21/3065 ,  H01J37/3053 ,  H01L21/30604 ,  H01J2237/3341

Abstract: A manufacturing method for a semiconductor device according to an embodiment includes performing first etching for forming a recess in a layer to be processed using a reactive ion etching method, performing a first treatment of supplying a silylation agent to the recess after the first etching, and performing second etching of etching at least a bottom surface of the recess using a reactive ion etching method after the first treatment.

公开(公告)号：US11751397B2

公开(公告)日：2023-09-05

申请号：US17850699

申请日：2022-06-27

Applicant: KIOXIA CORPORATION

Inventor： Yuta Saito ,  Shinji Mori ,  Atsushi Takahashi ,  Toshiaki Yanase ,  Keiichi Sawa ,  Kazuhiro Matsuo ,  Hiroyuki Yamashita

IPC: H10B43/27 ,  H01L21/02 ,  H01L29/04

CPC classification number: H10B43/27 ,  H01L21/02672 ,  H01L29/045

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

公开(公告)号：US11437232B2

公开(公告)日：2022-09-06

申请号：US16059222

申请日：2018-08-09

Applicant: Kioxia Corporation

Inventor： Takaya Ishino ,  Atsushi Takahashi ,  Kazunori Zaima

IPC: H01L27/00 ,  H01L21/02 ,  H01L21/027 ,  H01L27/11582 ,  H01L21/311 ,  H01L27/11575 ,  H01L27/1157

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.

公开(公告)号：US11785774B2

公开(公告)日：2023-10-10

申请号：US17659881

申请日：2022-04-20

Applicant: KIOXIA CORPORATION

Inventor： Keiichi Sawa ,  Kazuhiro Matsuo ,  Kazuhisa Matsuda ,  Hiroyuki Yamashita ,  Yuta Saito ,  Shinji Mori ,  Masayuki Tanaka ,  Kenichiro Toratani ,  Atsushi Takahashi ,  Shouji Honda

IPC: H10B43/27 ,  H10B41/10 ,  H01L29/792 ,  H10B43/20 ,  H10B43/35

CPC classification number: H10B43/27 ,  H10B41/10 ,  H10B43/20 ,  H01L29/7926 ,  H10B43/35

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

公开(公告)号：US20220384180A1

公开(公告)日：2022-12-01

申请号：US17879108

申请日：2022-08-02

Applicant: Kioxia Corporation

Inventor： Takaya ISHINO ,  Atsushi Takahashi ,  Kazunori Zaima

IPC: H01L21/02 ,  H01L21/027 ,  H01L27/11582 ,  H01L21/311 ,  H01L27/11575 ,  H01L27/1157

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.

公开(公告)号：US11282713B1

公开(公告)日：2022-03-22

申请号：US17173287

申请日：2021-02-11

Applicant: Kioxia Corporation

Inventor： Atsushi Takahashi

IPC: H01L21/311 ,  H01L21/67 ,  H01L27/115

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes etching the first film with first gas including carbon and fluorine to form a concave portion in the first film and form a second film in the concave portion. The method further includes treating the second film by using the second film to second gas or second liquid, wherein the second film is treated without plasma.