公开(公告)号：US11785774B2

公开(公告)日：2023-10-10

申请号：US17659881

申请日：2022-04-20

Applicant: KIOXIA CORPORATION

Inventor： Keiichi Sawa ,  Kazuhiro Matsuo ,  Kazuhisa Matsuda ,  Hiroyuki Yamashita ,  Yuta Saito ,  Shinji Mori ,  Masayuki Tanaka ,  Kenichiro Toratani ,  Atsushi Takahashi ,  Shouji Honda

IPC: H10B43/27 ,  H10B41/10 ,  H01L29/792 ,  H10B43/20 ,  H10B43/35

CPC classification number: H10B43/27 ,  H10B41/10 ,  H10B43/20 ,  H01L29/7926 ,  H10B43/35

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

公开(公告)号：US11974432B2

公开(公告)日：2024-04-30

申请号：US17412743

申请日：2021-08-26

Applicant: KIOXIA CORPORATION

Inventor： Hiroyuki Yamashita ,  Yuta Saito ,  Keiichi Sawa ,  Kazuhiro Matsuo ,  Yuta Kamiya ,  Shinji Mori ,  Kota Takahashi ,  Junichi Kaneyama ,  Tomoki Ishimaru ,  Kenichiro Toratani ,  Ha Hoang ,  Shouji Honda ,  Takafumi Ochiai

IPC: H10B43/27 ,  H01L21/28 ,  H01L29/423 ,  H10B41/27

CPC classification number: H10B43/27 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/4234 ,  H10B41/27

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

公开(公告)号：US11844219B2

公开(公告)日：2023-12-12

申请号：US17854072

申请日：2022-06-30

Applicant: Kioxia Corporation

Inventor： Yuta Saito ,  Shinji Mori ,  Keiichi Sawa ,  Kazuhisa Matsuda ,  Kazuhiro Matsuo ,  Hiroyuki Yamashita

IPC: H10B43/27 ,  H01L21/324 ,  H01L23/532 ,  H01L21/28

CPC classification number: H10B43/27 ,  H01L21/324 ,  H01L23/53295 ,  H01L29/40117

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

公开(公告)号：US11751397B2

公开(公告)日：2023-09-05

申请号：US17850699

申请日：2022-06-27

Applicant: KIOXIA CORPORATION

Inventor： Yuta Saito ,  Shinji Mori ,  Atsushi Takahashi ,  Toshiaki Yanase ,  Keiichi Sawa ,  Kazuhiro Matsuo ,  Hiroyuki Yamashita

IPC: H10B43/27 ,  H01L21/02 ,  H01L29/04

CPC classification number: H10B43/27 ,  H01L21/02672 ,  H01L29/045

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

公开(公告)号：US12101928B2

公开(公告)日：2024-09-24

申请号：US17460967

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Natsuki Fukuda ,  Ryota Narasaki ,  Takashi Kurusu ,  Yuta Kamiya ,  Kazuhiro Matsuo ,  Shinji Mori ,  Shoji Honda ,  Takafumi Ochiai ,  Hiroyuki Yamashita ,  Junichi Kaneyama ,  Ha Hoang ,  Yuta Saito ,  Kota Takahashi ,  Tomoki Ishimaru ,  Kenichiro Toratani

IPC: H10B41/27 ,  H10B41/10 ,  H10B43/10 ,  H10B43/27

CPC classification number: H10B41/27 ,  H10B41/10 ,  H10B43/10 ,  H10B43/27

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer being interposed between the portion of the first charge storage layer and the second charge storage layer in the second direction.

公开(公告)号：US11647628B2

公开(公告)日：2023-05-09

申请号：US17017385

申请日：2020-09-10

Applicant: Kioxia Corporation

Inventor： Yuta Saito ,  Shinji Mori ,  Keiji Hosotani ,  Daisuke Hagishima ,  Atsushi Takahashi

IPC: H01L27/115 ,  H01L27/11578 ,  H01L27/11568 ,  H01L27/11565

CPC classification number: H01L27/11578 ,  H01L27/11565 ,  H01L27/11568

Abstract: According to one embodiment, a semiconductor memory device includes: a first semiconductor layer; first and second insulating layers in contact with the first semiconductor layer; a second semiconductor layer in contact with the first insulating layer; a third semiconductor layer in contact with the second insulating layer; a first conductor; a third insulating layer in contact with the first conductor; a fourth insulating layer provided between the second semiconductor layer and the third insulating layer; a first charge storage layer provided between the second semiconductor layer and the fourth insulating layer; and a fifth insulating layer provided between the second semiconductor layer and the first charge storage layer. The second semiconductor layer, the first conductor, the third to fifth insulating layers, and the first charge storage layer function as a first memory cell.

公开(公告)号：US20220302162A1

公开(公告)日：2022-09-22

申请号：US17412743

申请日：2021-08-26

Applicant: Kioxia Corporation

Inventor： Hiroyuki Yamashita ,  Yuta Saito ,  Keiichi Sawa ,  Kazuhiro Matsuo ,  Yuta Kamiya ,  Shinji Mori ,  Kota Takahashi ,  Junichi Kaneyama ,  Tomoki Ishimaru ,  Kenichiro Toratani ,  Ha Hoang ,  Shouji Honda ,  Takafumi Ochiai

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L29/423 ,  H01L21/28

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

公开(公告)号：US11335699B2

公开(公告)日：2022-05-17

申请号：US17136621

申请日：2020-12-29

Applicant: KIOXIA CORPORATION

Inventor： Keiichi Sawa ,  Kazuhiro Matsuo ,  Kazuhisa Matsuda ,  Hiroyuki Yamashita ,  Yuta Saito ,  Shinji Mori ,  Masayuki Tanaka ,  Kenichiro Toratani ,  Atsushi Takahashi ,  Shouji Honda

IPC: H01L27/11582 ,  H01L29/792 ,  H01L27/11578 ,  H01L27/11519 ,  H01L27/1157

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.