公开(公告)号：US20240098962A1

公开(公告)日：2024-03-21

申请号：US18165595

申请日：2023-02-07

Applicant: Kioxia Corporation

Inventor： Daisuke WATANABE ,  Akifumi GAWASE ,  Takeshi IWASAKI ,  Kazuhiro KATONO ,  Yusuke MUTO ,  Yusuke MIKI ,  Akinori KIMURA

IPC: H10B10/00 ,  H01L29/786

CPC classification number: H10B10/125 ,  H01L29/78693

Abstract: A semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.

公开(公告)号：US20210288252A1

公开(公告)日：2021-09-16

申请号：US17184871

申请日：2021-02-25

Applicant: Kioxia Corporation

Inventor： Toshihiko NAGASE ,  Daisuke WATANABE ,  Yoshitomo KOBAYASHI ,  Hiroki TOKUHIRA ,  Hiroki KAWAI

IPC: H01L45/00 ,  H01L27/24

Abstract: A selector includes a first electrode, a second electrode, and a selector layer provided between the first electrode and the second electrode and contains SixTeyNz. The x, y, and z of the SixTeyNz satisfy 0

公开(公告)号：US20240298549A1

公开(公告)日：2024-09-05

申请号：US18592306

申请日：2024-02-29

Applicant: Kioxia Corporation

Inventor： Rina NOMOTO ,  Hideyuki SUGIYAMA ,  Daisuke WATANABE ,  Bao NGUYEN VIET ,  Youngmin EEH ,  Masaru TOKO ,  Taiga ISODA

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/20

CPC classification number: H10N50/85 ,  H10B61/10 ,  H10N50/20

Abstract: A magnetic device includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first and second magnetic layers and including: a first layer in contact with the first magnetic layer and including a magnesium oxide, a second layer in contact with the second magnetic layer and including a magnesium oxide, and a third layer between the first and second layers and including a scandium nitride.

公开(公告)号：US20240090344A1

公开(公告)日：2024-03-14

申请号：US18178469

申请日：2023-03-03

Applicant: Kioxia Corporation

Inventor： Takeo KOIKE ,  Rina NOMOTO ,  Hiroyuki KANAYA ,  Masahiko NAKAYAMA ,  Daisuke WATANABE

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/20

CPC classification number: H10N50/85 ,  H10B61/00 ,  H10N50/20 ,  H01F10/329

Abstract: A magnetic storage device includes first and second magnetic layers and a non-magnetic layer, where the non-magnetic layer includes a first oxide layer containing magnesium and oxygen, a second oxide layer containing magnesium and oxygen, a third oxide layer containing zinc and oxygen, a fourth oxide layer containing a first predetermined element and oxygen, and a fifth oxide layer containing a second predetermined element and oxygen, and a crystal structure of an oxide of the first predetermined element and a crystal structure of an oxide of the second predetermined element are each a rock salt structure. The first predetermined element and the second predetermined element each have an oxide formation free energy greater than an oxide formation free energy of zinc, and the oxide of the first predetermined element and the oxide of the second predetermined element each have a bandgap narrower than a bandgap of an oxide of magnesium.

公开(公告)号：US20230380183A1

公开(公告)日：2023-11-23

申请号：US18229133

申请日：2023-08-01

Applicant: Kioxia Corporation

Inventor： Masayoshi IWAYAMA ,  Tatsuya KISHI ,  Masahiko NAKAYAMA ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Tadashi KAI

IPC: H10B61/00 ,  H10N50/01

CPC classification number: H10B61/10 ,  H10N50/01 ,  H10N50/80

Abstract: A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.

公开(公告)号：US20210083007A1

公开(公告)日：2021-03-18

申请号：US16803933

申请日：2020-02-27

Applicant: KIOXIA CORPORATION

Inventor： Hiroki KAWAI ,  Daisuke WATANABE ,  Toshihiko NAGASE

IPC: H01L27/24 ,  H01L27/22

Abstract: According to one embodiment, a variable resistance element includes a first electrode, a second electrode, and a variable resistance layer and a tellurium-containing compound layer disposed between the first electrode and the second electrode. The tellurium-containing compound layer contains tellurium, oxygen, and at least one element selected from tin, copper, and bismuth. In some examples, the tellurium-containing compound layer can function as a switching layer in a memory cell structure.