公开(公告)号：US20240324242A1

公开(公告)日：2024-09-26

申请号：US18605999

申请日：2024-03-15

Applicant: Kioxia Corporation

Inventor： Kazuya SAWADA ,  Toshihiko NAGASE ,  Kenichi YOSHINO ,  Hyungjun CHO ,  Naoki AKIYAMA ,  Takuya SHIMANO

IPC: H10B61/00 ,  H10N50/10 ,  H10N50/80

CPC classification number: H10B61/10 ,  H10N50/10 ,  H10N50/80

Abstract: According to one embodiment, a memory device includes a first wiring line extending along a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending along a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line, and including a magnetoresistance effect element, a switching element, a middle electrode provided between the magnetoresistance effect element and the switching element, and a resistive layer provided between the magnetoresistance effect element and the second wiring line. A resistance of the resistive layer is higher than a resistance of the middle electrode.

公开(公告)号：US20240099156A1

公开(公告)日：2024-03-21

申请号：US18466868

申请日：2023-09-14

Applicant: Kioxia Corporation

Inventor： Kazuya SAWADA ,  Toshihiko NAGASE ,  Kenichi YOSHINO ,  Hyungjun CHO ,  Naoki AKIYAMA ,  Takuya SHIMANO ,  Tadaaki OIKAWA

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/20

CPC classification number: H10N50/80 ,  H10B61/10 ,  H10N50/01 ,  H10N50/20

Abstract: According to one embodiment, a magnetic memory device includes an electrode, and a magnetoresistance effect element provided on the electrode. The electrode includes a first electrode portion and a second electrode portion provided between the magnetoresistance effect element and the first electrode portion and containing a metal element selected from molybdenum (Mo) and ruthenium (Ru).

公开(公告)号：US20210288252A1

公开(公告)日：2021-09-16

申请号：US17184871

申请日：2021-02-25

Applicant: Kioxia Corporation

Inventor： Toshihiko NAGASE ,  Daisuke WATANABE ,  Yoshitomo KOBAYASHI ,  Hiroki TOKUHIRA ,  Hiroki KAWAI

IPC: H01L45/00 ,  H01L27/24

Abstract: A selector includes a first electrode, a second electrode, and a selector layer provided between the first electrode and the second electrode and contains SixTeyNz. The x, y, and z of the SixTeyNz satisfy 0

公开(公告)号：US20230071013A1

公开(公告)日：2023-03-09

申请号：US17691652

申请日：2022-03-10

Applicant: Kioxia Corporation

Inventor： Kazuya SAWADA ,  Toshihiko NAGASE ,  Kenichi YOSHINO ,  Kazuhiro TOMIOKA ,  Naoki AKIYAMA ,  Takuya SHIMANO ,  Hisanori AIKAWA ,  Taichi IGARASHI

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistance memory device includes a first conductor, a first insulator covering a side surface of the first conductor, a second conductor on the first conductor that are substantially made of a non-magnetic non-nitrogen material. The device includes a variable resistance material, a third conductor, a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer. The third conductor, a fourth conductor on the second ferromagnetic layer, and a second insulator covering side surfaces of the first and second ferromagnetic layers and insulating layer are substantially made of a non-nitrogen material. A third insulator is on the second insulator.

公开(公告)号：US20230380183A1

公开(公告)日：2023-11-23

申请号：US18229133

申请日：2023-08-01

Applicant: Kioxia Corporation

Inventor： Masayoshi IWAYAMA ,  Tatsuya KISHI ,  Masahiko NAKAYAMA ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Tadashi KAI

IPC: H10B61/00 ,  H10N50/01

CPC classification number: H10B61/10 ,  H10N50/01 ,  H10N50/80

Abstract: A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.

公开(公告)号：US20210083007A1

公开(公告)日：2021-03-18

申请号：US16803933

申请日：2020-02-27

Applicant: KIOXIA CORPORATION

Inventor： Hiroki KAWAI ,  Daisuke WATANABE ,  Toshihiko NAGASE

IPC: H01L27/24 ,  H01L27/22

Abstract: According to one embodiment, a variable resistance element includes a first electrode, a second electrode, and a variable resistance layer and a tellurium-containing compound layer disposed between the first electrode and the second electrode. The tellurium-containing compound layer contains tellurium, oxygen, and at least one element selected from tin, copper, and bismuth. In some examples, the tellurium-containing compound layer can function as a switching layer in a memory cell structure.