公开(公告)号：US11974432B2

公开(公告)日：2024-04-30

申请号：US17412743

申请日：2021-08-26

Applicant: KIOXIA CORPORATION

Inventor： Hiroyuki Yamashita ,  Yuta Saito ,  Keiichi Sawa ,  Kazuhiro Matsuo ,  Yuta Kamiya ,  Shinji Mori ,  Kota Takahashi ,  Junichi Kaneyama ,  Tomoki Ishimaru ,  Kenichiro Toratani ,  Ha Hoang ,  Shouji Honda ,  Takafumi Ochiai

IPC: H10B43/27 ,  H01L21/28 ,  H01L29/423 ,  H10B41/27

CPC classification number: H10B43/27 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/4234 ,  H10B41/27

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

公开(公告)号：US12274061B2

公开(公告)日：2025-04-08

申请号：US17410895

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Masaya Toda ,  Kota Takahashi ,  Kazuhiro Matsuo ,  Yuta Kamiya ,  Shinji Mori ,  Kenichiro Toratani

IPC: H10B43/27 ,  H01L21/28 ,  H10B43/35

Abstract: A semiconductor device includes a stacked film of electrode layers and insulating layers. A charge storage layer is in a hole in the stacked film on a first insulating film. A channel layer is on the charge storage layer via a second insulating film. An adsorption promoting layer is on surfaces of a third insulating layer covering the insulating layers and the first insulating film facing the electrode layers. The third insulating film includes a first metal element and a first element, and the adsorption promoting layer includes a second element and a third element. The difference in electronegativity between the second element and the third element is larger than a difference in electronegativity between the first metal element and the first element.

公开(公告)号：US12101928B2

公开(公告)日：2024-09-24

申请号：US17460967

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Natsuki Fukuda ,  Ryota Narasaki ,  Takashi Kurusu ,  Yuta Kamiya ,  Kazuhiro Matsuo ,  Shinji Mori ,  Shoji Honda ,  Takafumi Ochiai ,  Hiroyuki Yamashita ,  Junichi Kaneyama ,  Ha Hoang ,  Yuta Saito ,  Kota Takahashi ,  Tomoki Ishimaru ,  Kenichiro Toratani

IPC: H10B41/27 ,  H10B41/10 ,  H10B43/10 ,  H10B43/27

CPC classification number: H10B41/27 ,  H10B41/10 ,  H10B43/10 ,  H10B43/27

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer being interposed between the portion of the first charge storage layer and the second charge storage layer in the second direction.

公开(公告)号：US20220302162A1

公开(公告)日：2022-09-22

申请号：US17412743

申请日：2021-08-26

Applicant: Kioxia Corporation

Inventor： Hiroyuki Yamashita ,  Yuta Saito ,  Keiichi Sawa ,  Kazuhiro Matsuo ,  Yuta Kamiya ,  Shinji Mori ,  Kota Takahashi ,  Junichi Kaneyama ,  Tomoki Ishimaru ,  Kenichiro Toratani ,  Ha Hoang ,  Shouji Honda ,  Takafumi Ochiai

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L29/423 ,  H01L21/28

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.