公开(公告)号：US11316101B2

公开(公告)日：2022-04-26

申请号：US16810656

申请日：2020-03-05

Applicant: KIOXIA CORPORATION

Inventor： Rina Nomoto ,  Takayuki Tsukagoshi ,  Yasushi Nakasaki ,  Masaru Toko ,  Tadashi Kai ,  Takamitsu Ishihara

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08

Abstract: A stack of the embodiment includes: a first magnetic substance; a second magnetic substance; and a first nonmagnetic substance which is disposed between the first magnetic substance and the second magnetic substance and contains at least one first metal element (M1) selected from the group consisting of ruthenium (Ru) and osmium (Os) and at least one second metal element (M2) selected from the group consisting of rhodium (Rh) and iridium (Ir). A magnetic device of the embodiment includes: a third magnetic substance; the stack; and a second nonmagnetic substance which is disposed between the third magnetic substance and the stack.

公开(公告)号：US12178148B2

公开(公告)日：2024-12-24

申请号：US17899914

申请日：2022-08-31

Applicant: KIOXIA CORPORATION

Inventor： Kenji Fukuda ,  Rina Nomoto ,  Hiroyuki Kanaya ,  Masahiko Nakayama ,  Hideyuki Sugiyama

IPC: H10N70/00 ,  G11C11/16 ,  H10B61/00 ,  H10B63/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A storage device includes a memory cell including a variable resistance element and a switching element having snapback current-voltage characteristics. The switching element includes a first conductive layer in contact with the variable resistance element, a second conductive layer, and a switching layer provided between the first conductive layer and the second conductive layer. The switching layer includes at least one switching member and a first insulating layer having a thermal conductivity higher than 1.4 W/m/K. A cross-sectional area of the switching member at a connection surface between the switching layer and the first conductive layer and a cross-sectional area of the switching member at a connection surface between the switching layer and the second conductive layer are each smaller than a cross-sectional area at a connection surface between the first conductive layer and the variable resistance element.