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公开(公告)号：US11758739B2
公开(公告)日：2023-09-12
申请号：US17371138
申请日：2021-07-09
申请人： Kioxia Corporation
发明人： Masayoshi Iwayama , Tatsuya Kishi , Masahiko Nakayama , Toshihiko Nagase , Daisuke Watanabe , Tadashi Kai
IPC分类号： H01L27/108 , H10B61/00 , H10N50/01 , H10N50/80 , H10N50/85
摘要： A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.
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公开(公告)号：US11316101B2
公开(公告)日：2022-04-26
申请号：US16810656
申请日：2020-03-05
申请人： KIOXIA CORPORATION
发明人： Rina Nomoto , Takayuki Tsukagoshi , Yasushi Nakasaki , Masaru Toko , Tadashi Kai , Takamitsu Ishihara
摘要： A stack of the embodiment includes: a first magnetic substance; a second magnetic substance; and a first nonmagnetic substance which is disposed between the first magnetic substance and the second magnetic substance and contains at least one first metal element (M1) selected from the group consisting of ruthenium (Ru) and osmium (Os) and at least one second metal element (M2) selected from the group consisting of rhodium (Rh) and iridium (Ir). A magnetic device of the embodiment includes: a third magnetic substance; the stack; and a second nonmagnetic substance which is disposed between the third magnetic substance and the stack.
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公开(公告)号：US11856791B2
公开(公告)日：2023-12-26
申请号：US17750002
申请日：2022-05-20
申请人： KIOXIA CORPORATION
发明人： Masahiko Nakayama , Kazumasa Sunouchi , Gaku Sudo , Tadashi Kai
CPC分类号： H10B61/10 , H10N50/80 , G11C11/161 , H10N50/85
摘要： A nonvolatile storage device includes first interconnections extending in a first direction and second interconnections extending in a second direction intersecting the first direction. Memory cells are formed at intersections between first and second interconnections. Each memory cell includes a resistance change element and a selector. In the arrangement of memory cells, all memory cells that are connected to any particular first interconnection are aligned along that first interconnection, and all memory cells connected to any particular second interconnection are alternately staggered in the first direction across a width of that second interconnection.
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公开(公告)号：US12133394B2
公开(公告)日：2024-10-29
申请号：US18229133
申请日：2023-08-01
申请人： Kioxia Corporation
发明人： Masayoshi Iwayama , Tatsuya Kishi , Masahiko Nakayama , Toshihiko Nagase , Daisuke Watanabe , Tadashi Kai
摘要： A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.
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公开(公告)号：US11502125B2
公开(公告)日：2022-11-15
申请号：US16816775
申请日：2020-03-12
申请人： KIOXIA CORPORATION
发明人： Masaru Toko , Tadaomi Daibou , Junichi Ito , Taichi Igarashi , Tadashi Kai
摘要： A magnetoresistive memory device according to one embodiment includes: first and second layer stacks, each of which includes: a first ferromagnetic layer having a magnetization directed in a first direction; a non-magnetic first conductive layer above the first ferromagnetic layer, a second ferromagnetic layer provided above the first conductive layer and having a magnetization directed in a second direction different from the first direction, a first insulating layer on an upper surface of the second ferromagnetic layer, and a third ferromagnetic layer above the first insulating layer. The second ferromagnetic layer of the second layer stack is thicker than the second ferromagnetic layer of the first layer stack.
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公开(公告)号：US12075629B2
公开(公告)日：2024-08-27
申请号：US17482865
申请日：2021-09-23
申请人： Kioxia Corporation
发明人： Tadaomi Daibou , Yasushi Nakasaki , Tadashi Kai , Hiroki Kawai , Takamitsu Ishihara , Junichi Ito
摘要： According to one embodiment, a magnetic memory device including a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains a first additive element and a second additive element, the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mn), lithium (Li), nitrogen (N) and magnesium (Mg), and the second additive element is lithium (Li).
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公开(公告)号：US11367748B2
公开(公告)日：2022-06-21
申请号：US17206364
申请日：2021-03-19
申请人： KIOXIA CORPORATION
发明人： Masahiko Nakayama , Kazumasa Sunouchi , Gaku Sudo , Tadashi Kai
摘要： A nonvolatile storage device includes first interconnections extending in a first direction and second interconnections extending in a second direction intersecting the first direction. Memory cells are formed at intersections between first and second interconnections. Each memory cell includes a resistance change element and a selector. In the arrangement of memory cells, all memory cells that are connected to any particular first interconnection are aligned along that first interconnection, and all memory cells connected to any particular second interconnection are alternately staggered in the first direction across a width of that second interconnection.
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公开(公告)号：US11316097B2
公开(公告)日：2022-04-26
申请号：US17003846
申请日：2020-08-26
申请人： KIOXIA CORPORATION
发明人： Taichi Igarashi , Tadaomi Daibou , Junichi Ito , Tadashi Kai , Shogo Itai , Toshiyuki Enda
摘要： According to one embodiment, a memory device includes a first wiring extending in a first direction, and a second wiring extending in a second direction that intersects the first direction. A memory cell is between the first wiring and the second wiring and includes a resistive memory element and a switching element that are connected in series between the first wiring and the second wiring. An insulating region surrounds side surfaces of the memory cell. The insulating region includes a first insulating part adjacent to a side surface of the resistive memory element and a second insulating part adjacent to a side surface of the switching element. The second insulating part has a higher thermal conductivity than the first insulating part.
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公开(公告)号：US11355694B2
公开(公告)日：2022-06-07
申请号：US16570020
申请日：2019-09-13
申请人： Kioxia Corporation
发明人： Tadaomi Daibou , Yasushi Nakasaki , Tadashi Kai , Hiroki Kawai , Takamitsu Ishihara , Junichi Ito
摘要： According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains an additive element selected from fluorine (F), sulfur (S), hydrogen (H) and lithium (Li).
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