公开(公告)号：US11316101B2

公开(公告)日：2022-04-26

申请号：US16810656

申请日：2020-03-05

申请人： KIOXIA CORPORATION

发明人： Rina Nomoto ,  Takayuki Tsukagoshi ,  Yasushi Nakasaki ,  Masaru Toko ,  Tadashi Kai ,  Takamitsu Ishihara

IPC分类号： H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08

摘要： A stack of the embodiment includes: a first magnetic substance; a second magnetic substance; and a first nonmagnetic substance which is disposed between the first magnetic substance and the second magnetic substance and contains at least one first metal element (M1) selected from the group consisting of ruthenium (Ru) and osmium (Os) and at least one second metal element (M2) selected from the group consisting of rhodium (Rh) and iridium (Ir). A magnetic device of the embodiment includes: a third magnetic substance; the stack; and a second nonmagnetic substance which is disposed between the third magnetic substance and the stack.

公开(公告)号：US12075629B2

公开(公告)日：2024-08-27

申请号：US17482865

申请日：2021-09-23

申请人： Kioxia Corporation

发明人： Tadaomi Daibou ,  Yasushi Nakasaki ,  Tadashi Kai ,  Hiroki Kawai ,  Takamitsu Ishihara ,  Junichi Ito

IPC分类号： H10B61/00 ,  H10N50/10 ,  H10N50/80

CPC分类号： H10B61/00 ,  H10N50/10 ,  H10N50/80

摘要： According to one embodiment, a magnetic memory device including a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains a first additive element and a second additive element, the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mn), lithium (Li), nitrogen (N) and magnesium (Mg), and the second additive element is lithium (Li).

公开(公告)号：US11355694B2

公开(公告)日：2022-06-07

申请号：US16570020

申请日：2019-09-13

申请人： Kioxia Corporation

发明人： Tadaomi Daibou ,  Yasushi Nakasaki ,  Tadashi Kai ,  Hiroki Kawai ,  Takamitsu Ishihara ,  Junichi Ito

IPC分类号： H01L43/02 ,  H01L43/10 ,  H01L27/22

摘要： According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains an additive element selected from fluorine (F), sulfur (S), hydrogen (H) and lithium (Li).