公开(公告)号：US12075629B2

公开(公告)日：2024-08-27

申请号：US17482865

申请日：2021-09-23

Applicant: Kioxia Corporation

Inventor： Tadaomi Daibou ,  Yasushi Nakasaki ,  Tadashi Kai ,  Hiroki Kawai ,  Takamitsu Ishihara ,  Junichi Ito

IPC: H10B61/00 ,  H10N50/10 ,  H10N50/80

CPC classification number: H10B61/00 ,  H10N50/10 ,  H10N50/80

Abstract: According to one embodiment, a magnetic memory device including a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains a first additive element and a second additive element, the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mn), lithium (Li), nitrogen (N) and magnesium (Mg), and the second additive element is lithium (Li).

公开(公告)号：US11985907B2

公开(公告)日：2024-05-14

申请号：US17202151

申请日：2021-03-15

Applicant: Kioxia Corporation

Inventor： Shogo Itai ,  Tadaomi Daibou ,  Yuichi Ito ,  Katsuyoshi Komatsu

IPC: H10N50/80 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10

CPC classification number: H10N50/80 ,  H01F10/3286 ,  H01F10/329 ,  H10B61/10 ,  H01F10/3254 ,  H01F10/3272 ,  H10N50/10

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.

公开(公告)号：US11600772B2

公开(公告)日：2023-03-07

申请号：US17014587

申请日：2020-09-08

Applicant: Kioxia Corporation

Inventor： Hiroki Kawai ,  Katsuyoshi Komatsu ,  Tadaomi Daibou ,  Hiroki Tokuhira ,  Masatoshi Yoshikawa ,  Yuichi Ito

IPC: H01L45/00

Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0

公开(公告)号：US11316097B2

公开(公告)日：2022-04-26

申请号：US17003846

申请日：2020-08-26

Applicant: KIOXIA CORPORATION

Inventor： Taichi Igarashi ,  Tadaomi Daibou ,  Junichi Ito ,  Tadashi Kai ,  Shogo Itai ,  Toshiyuki Enda

IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  G11C11/34 ,  G11C11/54 ,  H01L43/10

Abstract: According to one embodiment, a memory device includes a first wiring extending in a first direction, and a second wiring extending in a second direction that intersects the first direction. A memory cell is between the first wiring and the second wiring and includes a resistive memory element and a switching element that are connected in series between the first wiring and the second wiring. An insulating region surrounds side surfaces of the memory cell. The insulating region includes a first insulating part adjacent to a side surface of the resistive memory element and a second insulating part adjacent to a side surface of the switching element. The second insulating part has a higher thermal conductivity than the first insulating part.

公开(公告)号：US11963459B2

公开(公告)日：2024-04-16

申请号：US17469778

申请日：2021-09-08

Applicant: Kioxia Corporation

Inventor： Hiroshi Takehira ,  Katsuyoshi Komatsu ,  Tadaomi Daibou ,  Hiroki Kawai ,  Yuichi Ito

IPC: H01L21/00 ,  G11C11/16 ,  G11C19/08 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85 ,  H10B61/00

CPC classification number: H10N50/10 ,  G11C11/161 ,  G11C19/0841 ,  H10N50/80 ,  H10N50/85 ,  H10B61/00

Abstract: A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of Z2Te3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the Z2Te3—ZN line is B, the material has a composition satisfying X=1.2 (1−A) (0.5+B), Y=A (0.5+B), and W=1−X−Y, where −0.06≤B≤0.06 is satisfied when ⅓>A and ¾

公开(公告)号：US11355694B2

公开(公告)日：2022-06-07

申请号：US16570020

申请日：2019-09-13

Applicant: Kioxia Corporation

Inventor： Tadaomi Daibou ,  Yasushi Nakasaki ,  Tadashi Kai ,  Hiroki Kawai ,  Takamitsu Ishihara ,  Junichi Ito

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains an additive element selected from fluorine (F), sulfur (S), hydrogen (H) and lithium (Li).

公开(公告)号：US12144267B2

公开(公告)日：2024-11-12

申请号：US17460898

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Jieqiong Zhang ,  Masatoshi Yoshikawa ,  Tadaomi Daibou

IPC: H10B63/00 ,  H10N70/00

Abstract: According to one embodiment, a selector device includes a first electrode, a second electrode, and a selector layer disposed between the first electrode and the second electrode. At least one of the first electrode or the second electrode includes a stacked film. The stacked film includes a first layer including a first material with a first Debye temperature, and a second layer in contact with the first layer and including a second material with a second Debye temperature lower than the first Debye temperature. A ratio of the first Debye temperature to the second Debye temperature is equal to or greater than 5.

公开(公告)号：US12029136B2

公开(公告)日：2024-07-02

申请号：US17202151

申请日：2021-03-15

Applicant: Kioxia Corporation

Inventor： Shogo Itai ,  Tadaomi Daibou ,  Yuichi Ito ,  Katsuyoshi Komatsu

IPC: H10N50/80 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10

CPC classification number: H10N50/80 ,  H01F10/3286 ,  H01F10/329 ,  H10B61/10 ,  H01F10/3254 ,  H01F10/3272 ,  H10N50/10

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.

公开(公告)号：US11678593B2

公开(公告)日：2023-06-13

申请号：US17400912

申请日：2021-08-12

Applicant: Kioxia Corporation

Inventor： Katsuyoshi Komatsu ,  Takeshi Iwasaki ,  Tadaomi Daibou ,  Hiroki Kawai

IPC: G11C13/00 ,  H01L45/00

CPC classification number: H01L45/06 ,  G11C13/0004 ,  G11C13/0069 ,  H01L45/144

Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

公开(公告)号：US11502125B2

公开(公告)日：2022-11-15

申请号：US16816775

申请日：2020-03-12

Applicant: KIOXIA CORPORATION

Inventor： Masaru Toko ,  Tadaomi Daibou ,  Junichi Ito ,  Taichi Igarashi ,  Tadashi Kai

IPC: H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetoresistive memory device according to one embodiment includes: first and second layer stacks, each of which includes: a first ferromagnetic layer having a magnetization directed in a first direction; a non-magnetic first conductive layer above the first ferromagnetic layer, a second ferromagnetic layer provided above the first conductive layer and having a magnetization directed in a second direction different from the first direction, a first insulating layer on an upper surface of the second ferromagnetic layer, and a third ferromagnetic layer above the first insulating layer. The second ferromagnetic layer of the second layer stack is thicker than the second ferromagnetic layer of the first layer stack.