Abstract:
Disclosed are methods and apparatus for inspecting and processing semiconductor wafers. The system includes an edge detection system for receiving each wafer that is to undergo a photolithography process. The edge detection system comprises an illumination channel for directing one or more illumination beams towards a side, top, and bottom edge portion that are within a border region of the wafer. The edge detection system also includes a collection module for collecting and sensing output radiation that is scattered or reflected from the edge portion of the wafer and an analyzer module for locating defects in the edge portion and determining whether each wafer is within specification based on the sensed output radiation for such wafer. The photolithography system is configured for receiving from the edge detection system each wafer that has been found to be within specification. The edge detection system is coupled in-line with the photolithography system.
Abstract:
Disclosed are methods and apparatus for imaging a rounded edge of a sample, such as a wafer with a beveled edge. In one embodiment, the system includes a curved diffuser having an internal surface for positioning towards the rounded edge of the sample and an external surface opposite the internal surface and light sources for generating a plurality of illumination beams adjacent to a plurality of positions on the external surface of the diffuser so that the diffuser outputs uniform light onto the rounded edge of the sample at a wide range of incident angles. The system further includes a sensor for receiving light scattered from the rounded edge of the sample in response to the incident light and generating a detected signal for generating an image. These elements are partially or entirely integrated into a compact assembly.
Abstract:
Disclosed are methods and apparatus for inspecting and processing semiconductor wafers. The system includes an edge detection system for receiving each wafer that is to undergo a photolithography process. The edge detection system comprises an illumination channel for directing one or more illumination beams towards a side, top, and bottom edge portion that are within a border region of the wafer. The edge detection system also includes a collection module for collecting and sensing output radiation that is scattered or reflected from the edge portion of the wafer and an analyzer module for locating defects in the edge portion and determining whether each wafer is within specification based on the sensed output radiation for such wafer. The photolithography system is configured for receiving from the edge detection system each wafer that has been found to be within specification. The edge detection system is coupled in-line with the photolithography system.
Abstract:
Disclosed are methods and apparatus for imaging a rounded edge of a sample, such as a wafer with a beveled edge. In one embodiment, the system includes a curved diffuser having an internal surface for positioning towards the rounded edge of the sample and an external surface opposite the internal surface and light sources for generating a plurality of illumination beams adjacent to a plurality of positions on the external surface of the diffuser so that the diffuser outputs uniform light onto the rounded edge of the sample at a wide range of incident angles. The system further includes a sensor for receiving light scattered from the rounded edge of the sample in response to the incident light and generating a detected signal for generating an image. These elements are partially or entirely integrated into a compact assembly.