公开(公告)号：US20230307230A1

公开(公告)日：2023-09-28

申请号：US18186699

申请日：2023-03-20

Applicant: Kokusai Electric Corporation

Inventor： Takashi NAKAGAWA ,  Shinya SASAKI ,  Noriaki MICHITA ,  Katsuhiko YAMAMOTO

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/02356 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67103

Abstract: There is provided a technique that includes: loading a substrate in which a treatment target film and an action target film are formed into a process chamber; irradiating the action target film with an electromagnetic wave; and causing the action target film to generate heat by the irradiation with the electromagnetic wave and modifying the treatment target film with a directionality by heating the treatment target film with the heat generated by the action target film.

公开(公告)号：US20210098251A1

公开(公告)日：2021-04-01

申请号：US16826844

申请日：2020-03-23

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Takashi NAKAGAWA ,  Yoshiro HIROSE ,  Naofumi OHASHI ,  Tadashi TAKASAKI

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/458 ,  C23C16/44 ,  H01L21/687

Abstract: There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.

公开(公告)号：US20220102137A1

公开(公告)日：2022-03-31

申请号：US17477200

申请日：2021-09-16

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Shoma MIYATA ,  Kimihiko NAKATANI ,  Takayuki WASEDA ,  Takashi NAKAGAWA ,  Motomu DEGAI

IPC: H01L21/02 ,  H01L21/285 ,  H01J37/32 ,  C23C16/04 ,  C23C16/455 ,  C23C16/52

Abstract: A substrate processing technique including: (a) modifying a first base surface of a substrate by supplying a first modifier and a second modifier to the substrate having a surface on which the first base and a second base are exposed, wherein the first modifier contains one or more atoms to which at least one first functional group and at least one second functional group are directly bonded, wherein the second modifier contains an atom to which at least one first functional group and at least one second functional group are directly bonded, and wherein the number of the at least one first functional group contained in one molecule of the second modifier is smaller than the number of the at least one first functional group contained in one molecule of the first modifier; and (b) forming a film on a second base surface by supplying film-forming gas to the substrate.

公开(公告)号：US20210202245A1

公开(公告)日：2021-07-01

申请号：US17132608

申请日：2020-12-23

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Takayuki WASEDA ,  Takashi NAKAGAWA ,  Kimihiko NAKATANI ,  Motomu DEGAI ,  Takao IZAKI ,  Yoshitomo HASHIMOTO

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/32 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52

Abstract: There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) selectively forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

公开(公告)号：US20210035801A1

公开(公告)日：2021-02-04

申请号：US16943150

申请日：2020-07-30

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Takayuki WASEDA ,  Takashi NAKAGAWA ,  Kimihiko NAKATANI ,  Motomu DEGAI ,  Yoshitomo HASHIMOTO

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/458

Abstract: There is included (a) forming a protective film on a surface of a third base by supplying a processing gas to a substrate in which a first base containing no oxygen, a second base containing oxygen, and the third base containing no oxygen and no nitrogen are exposed on a surface of the substrate; (b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate after the protective film is formed on the surface of the third base; and (c) selectively forming a film on a surface of the first base by supplying a film-forming gas to the substrate after the surface of the second base is modified.

公开(公告)号：US20230307267A1

公开(公告)日：2023-09-28

申请号：US18186997

申请日：2023-03-21

Applicant: Kokusai Electric Corporation

Inventor： Katsuhiko YAMAMOTO ,  Shuhei SAIDO ,  Takashi NAKAGAWA ,  Yoshihiko YANAGISAWA ,  Shinya SASAKI ,  Noriaki MICHITA

IPC: H01L21/67 ,  H01L21/324

CPC classification number: H01L21/67115 ,  H01L21/324

Abstract: According to the present disclosure, there is provided a technique capable of preventing a substrate from being warped or cracked due to a heat treatment process. According to one aspect thereof, there is provided a substrate processing apparatus including: a process chamber in which a plurality of substrates accommodated in a substrate retainer are processed; an electromagnetic wave generator configured to supply an electromagnetic wave into the process chamber; and a gas supplier configured to supply a cooling gas is supplied to between adjacent substrates among the plurality of substrates via a plurality of gas supply ports provided so as to correspond to an interval of the plurality of substrates accommodated in the substrate retainer.

公开(公告)号：US20220199421A1

公开(公告)日：2022-06-23

申请号：US17693022

申请日：2022-03-11

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Motomu DEGAI ,  Kimihiko NAKATANI ,  Takashi NAKAGAWA ,  Takayuki WASEDA ,  Yoshitomo HASHIMOTO

IPC: H01L21/3213 ,  H01L21/67

Abstract: There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming a layer on a surface of the base by supplying a modifying agent to the base; and (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the layer such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.

公开(公告)号：US20210305043A1

公开(公告)日：2021-09-30

申请号：US17200273

申请日：2021-03-12

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Kimihiko NAKATANI ,  Takashi NAKAGAWA ,  Takayuki WASEDA ,  Motomu DEGAI

IPC: H01L21/02 ,  H01L21/67

Abstract: There is provided a technique that includes: modifying a surface of first base exposed on a substrate by supplying modifying gas including the first base and second base exposed on the substrate; and selectively forming a film containing at least first element and second element different from the first element on a surface of the second base by supplying precursor gas to the substrate after the surface of the first base is modified, under condition that film-forming reaction by thermal decomposition of the precursor gas does not substantially occur, the precursor gas containing a compound in which atoms of the first element are contained in one molecule, at least one atom of the second element is interposed between two atoms of the first element, and each of the two atoms of the first element is directly bonded to one of the at least one atom of the second element.

公开(公告)号：US20190206679A1

公开(公告)日：2019-07-04

申请号：US16234087

申请日：2018-12-27

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Kiyohiko MAEDA ,  Masato TERASAKI ,  Yasuhiro MEGAWA ,  Takahiro MIYAKURA ,  Akito HIRANO ,  Takashi NAKAGAWA

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/455 ,  C23C16/24 ,  C23C16/06

CPC classification number: H01L21/02667 ,  C23C16/06 ,  C23C16/24 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02645

Abstract: There is provided a technique that includes: (a) forming a silicon germanium film in an amorphous state so as to embed an inside of a recess formed on a surface of a substrate, by supplying a first silicon-containing gas and a germanium-containing gas to the substrate at a first temperature; (b) raising a temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature; and (c) forming a silicon film on the silicon germanium film by supplying a second silicon-containing gas to the substrate at the second temperature, wherein in (c), the silicon germanium film as a base of the silicon film is crystallized while the silicon film is formed.

公开(公告)号：US20220020598A1

公开(公告)日：2022-01-20

申请号：US17377990

申请日：2021-07-16

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Kimihiko NAKATANI ,  Ryota UENO ,  Motomu DEGAI ,  Takashi NAKAGAWA ,  Yoshitomo HASHIMOTO ,  Yoshiro HIROSE

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/3065

Abstract: There is provided a technique that includes: etching a first film exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first modified layer in at least a portion of a surface of the first film by supplying a first gas to the substrate; and (b) etching at least a portion of the first film with an etching species, the etching species being generated by supplying a second gas having a molecular structure different from that of the first gas to the substrate to perform at least one selected from the group of causing the second gas to react with the first modified layer and activating the first modified layer with the second gas.