公开(公告)号：US12154769B2

公开(公告)日：2024-11-26

申请号：US17595928

申请日：2020-05-28

Applicant: KOREA INSTITUTE OF FUSION ENERGY

Inventor： Kang Il Lee ,  Yong Sup Choi ,  Young Woo Kim ,  Jong Sik Kim

IPC: H01J37/32

Abstract: A window device for diagnosis of plasma OES (Optical Emission Spectroscopy), is disclosed and includes a housing including a first chamber and a second chamber horizontally adjacent to each other; a connection opening defined in one face of the housing and between the first and second chambers, the connection opening faces toward an opening through which light of plasma from a plasma chamber is exposed to the connection opening; an observation window opening defined in an opposite face of the housing opposite to the connection opening, the observation window opening is coaxial with the connection opening, the light of the plasma transmits through the observation window opening, and is incident to a light receiver of an OES sensor; an observation window positioned inside the observation window opening and in the housing; a winder and a rewinder installed in the first and second chambers, respectively; and a transparent film.

公开(公告)号：US11268191B2

公开(公告)日：2022-03-08

申请号：US16644440

申请日：2018-11-01

Applicant: KOREA INSTITUTE OF FUSION ENERGY

Inventor： Yong Sup Choi ,  Kang Il Lee ,  Dong Chan Seok ,  Soo Ouk Jang ,  Jong Sik Kim ,  Seung Ryul Yoo

IPC: H01L21/3065 ,  H01L21/311 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32

Abstract: An atomic layer polishing method is described. The method includes: scanning the surface of a specimen to measure a peak site on the specimen surface; spraying toward the measured peak site a gas containing an element capable of binding to a first atom, which is an ingredient of the material of the specimen to form a first reaction gas layer in which the first reaction gas binds to the first atom on the surface of the peak; and projecting ions of inert gas to the peak site on which the first reaction gas layer is deposited to separate the first atom bound to the first reaction gas from the specimen.

公开(公告)号：US12098461B2

公开(公告)日：2024-09-24

申请号：US17758324

申请日：2021-01-22

Applicant: KOREA INSTITUTE OF FUSION ENERGY

Inventor： Seung Ryul Yoo ,  Yong Sup Choi ,  Yong Ho Jung ,  Dong Chan Seok ,  Kang Il Lee

IPC: C23C16/44 ,  B01J19/08 ,  C23C16/24 ,  C23C16/513

CPC classification number: C23C16/4417 ,  B01J19/088 ,  C23C16/24 ,  C23C16/513 ,  B01J2219/0809

Abstract: Disclosed is a plasma surface treatment apparatus for conductive powder. The plasma surface treatment apparatus for conductive powder comprises: a reaction chamber including a linear gas inlet at the lower end thereof and a gas outlet at the upper end thereof, and having a vertical cross section that is funnel-shaped; and a plasma jet generation device that is located below the linear gas inlet and is configured to discharge a plasma jet into the reaction chamber from below in an upward direction through the linear gas inlet, wherein powder is accommodated in the reaction chamber and is treated by plasma while buoyed by the plasma jet.

公开(公告)号：US11776819B2

公开(公告)日：2023-10-03

申请号：US16969488

申请日：2019-02-13

Applicant: KOREA INSTITUTE OF FUSION ENERGY

Inventor： Dong Chan Seok ,  Tai Hyeop Lho ,  Yong Ho Jung ,  Yong Sup Choi ,  Kang Il Lee ,  Seung Ryul Yoo ,  Soo Ouk Jang

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568

Abstract: A point etching module using an annular surface-discharge plasma apparatus is disclosed. The point etching module using an annular surface-discharge plasma apparatus comprises: a plate-shaped dielectric; a circular electrode disposed on and in contact with the upper surface of the dielectric; an annular electrode disposed on and in contact with the lower surface of the dielectric and providing a gas receiving space for receiving gas; and a power supplier for applying high voltage between the circular electrode and the annular electrode, wherein when the application of the high voltage starts an electric discharge, filament type plasma is irradiated toward a substrate to be treated, by using plasma flowing in the center direction of the annular electrode from between the inner surface of the annular electrode and the lower surface of the dielectric.