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    Method of making an electrostatic chuck with reduced plasma penetration and arcing
    1.
    发明申请
    Method of making an electrostatic chuck with reduced plasma penetration and arcing 有权
    制造具有降低的等离子体穿透和电弧放电的静电卡盘的方法

    公开(公告)号：US20090034148A1

    公开(公告)日：2009-02-05

    申请号：US11888327

    申请日：2007-07-31

    申请人： Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Kadthala Ramaya Narendrnath ,  Muhammad Rasheed ,  Tony Kaushal

    发明人： Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Kadthala Ramaya Narendrnath ,  Muhammad Rasheed ,  Tony Kaushal

    IPC分类号： H02N13/00

    CPC分类号： H02N13/00 ,  H01L21/6833 ,  Y10T29/49117 ,  Y10T29/49885

    摘要： A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.

    摘要翻译： 一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。 此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。 将电介质层抛光至规定的厚度。 在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。 在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。 在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。

    Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
    2.
    发明申请
    Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing 有权
    用于提供具有降低的等离子体穿透和电弧放电的静电卡盘的方法和装置

    公开(公告)号：US20090034147A1

    公开(公告)日：2009-02-05

    申请号：US11888311

    申请日：2007-07-31

    申请人： Kadthala Ramaya Narendrnath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky ,  Muhammad Rasheed ,  Tony Kaushal

    发明人： Kadthala Ramaya Narendrnath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky ,  Muhammad Rasheed ,  Tony Kaushal

    IPC分类号： H01L21/683 ,  H01L21/67

    CPC分类号： H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

    摘要： A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.

    摘要翻译： 一种用于提供用于静电卡盘的流体分配元件的方法和装置，其减少了传热流体通道内的等离子体形成和电弧。 一个实施例包括板和电介质部件，其中介电部件插入板中。 板适于被定位在通道内以限定通风室，其中介电部件提供耦合到集气室的流体通道的至少一部分。 形成在电介质部件上的多孔介电层提供至少另一部分与气室相连的流体通道。 在其他实施例中，流体分配元件包括各种组件的布置，以限定流体通道，该流体通道不提供从用于基底的支撑表面到气室的视线路径。

    Method of making an electrostatic chuck with reduced plasma penetration and arcing
    5.
    发明授权
    Method of making an electrostatic chuck with reduced plasma penetration and arcing 有权
    制造具有降低的等离子体穿透和电弧放电的静电卡盘的方法

    公开(公告)号：US08108981B2

    公开(公告)日：2012-02-07

    申请号：US11888327

    申请日：2007-07-31

    申请人： Dmitry Lubomirsky ,  Kadthala Ramaya Narendranath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Muhammad Rasheed ,  Tony Kaushal

    发明人： Dmitry Lubomirsky ,  Kadthala Ramaya Narendranath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Muhammad Rasheed ,  Tony Kaushal

    IPC分类号： B23P17/00

    CPC分类号： H02N13/00 ,  H01L21/6833 ,  Y10T29/49117 ,  Y10T29/49885

    摘要： A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.

    摘要翻译： 一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。 此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。 将电介质层抛光至规定的厚度。 在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。 在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。 在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。

    Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
    6.
    发明授权
    Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing 有权
    用于提供具有降低的等离子体穿透和电弧放电的静电卡盘的方法和装置

    公开(公告)号：US07848076B2

    公开(公告)日：2010-12-07

    申请号：US11888311

    申请日：2007-07-31

    申请人： Kadthala Ramaya Narendranath ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Goodhalekar ,  Muhammad Rasheed ,  Tony Kaushal

    发明人： Kadthala Ramaya Narendranath ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Goodhalekar ,  Muhammad Rasheed ,  Tony Kaushal

    IPC分类号： H01L21/683

    CPC分类号： H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

    摘要： A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.

    摘要翻译： 一种用于提供用于静电卡盘的流体分配元件的方法和装置，其减少了传热流体通道内的等离子体形成和电弧。 一个实施例包括板和电介质部件，其中介电部件插入板中。 板适于被定位在通道内以限定通风室，其中介电部件提供耦合到集气室的流体通道的至少一部分。 形成在电介质部件上的多孔介电层提供至少另一部分与气室相连的流体通道。 在其他实施例中，流体分配元件包括各种组件的布置，以限定流体通道，该流体通道不提供从用于基底的支撑表面到气室的视线路径。

    Low profile process kit
    7.
    发明授权
    Low profile process kit 有权
    低调的流程套件

    公开(公告)号：US08409355B2

    公开(公告)日：2013-04-02

    申请号：US12109187

    申请日：2008-04-24

    申请人： Muhammad M. Rasheed ,  Teruki Iwashita ,  Hiroshi Otake ,  Yuki Koga ,  Kazutoshi Maehara ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky

    发明人： Muhammad M. Rasheed ,  Teruki Iwashita ,  Hiroshi Otake ,  Yuki Koga ,  Kazutoshi Maehara ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： C23C16/4585 ,  C23C16/4581 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/68735

    摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in an radially outward direction from the inner edge toward the outer edge.

    摘要翻译： 本文提供了半导体衬底处理室的衬底支撑件的工艺组件的实施例。 在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。 在一些实施例中，用于半导体处理腔室的处理套件包括具有内边缘和外边缘的环形体，并具有上表面和下表面，上表面以约5-65度的向下角度设置在 从内缘朝向外缘的径向向外方向。

    INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER
    10.
    发明申请
    INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER 有权
    用于感应耦合高密度等离子体加工室的内部平衡线圈

    公开(公告)号：US20080185284A1

    公开(公告)日：2008-08-07

    申请号：US11670662

    申请日：2007-02-02

    申请人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    发明人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    IPC分类号： H01L21/3065 ,  C23C16/00 ,  H05F3/00

    CPC分类号： H01J37/321

    摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

    摘要翻译： 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。