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    Internal balanced coil for inductively coupled high density plasma processing chamber
    2.
    发明授权
    Internal balanced coil for inductively coupled high density plasma processing chamber 有权
    用于电感耦合高密度等离子体处理室的内部平衡线圈

    公开(公告)号：US07789993B2

    公开(公告)日：2010-09-07

    申请号：US11670662

    申请日：2007-02-02

    申请人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    发明人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/321

    摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

    摘要翻译： 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

    INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER
    5.
    发明申请
    INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER 有权
    用于感应耦合高密度等离子体加工室的内部平衡线圈

    公开(公告)号：US20080185284A1

    公开(公告)日：2008-08-07

    申请号：US11670662

    申请日：2007-02-02

    申请人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    发明人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    IPC分类号： H01L21/3065 ,  C23C16/00 ,  H05F3/00

    CPC分类号： H01J37/321

    摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

    摘要翻译： 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

    Two-piece dome with separate RF coils for inductively coupled plasma reactors
    6.
    发明授权
    Two-piece dome with separate RF coils for inductively coupled plasma reactors 失效
    具有用于电感耦合等离子体反应器的单独RF线圈的两片式圆顶

    公开(公告)号：US07651587B2

    公开(公告)日：2010-01-26

    申请号：US11202043

    申请日：2005-08-11

    申请人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert T. Chen ,  Jason T. Bloking ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh

    发明人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert T. Chen ,  Jason T. Bloking ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/3244 ,  H01J37/321 ,  H01J37/32431 ,  H01J37/32458

    摘要： A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

    摘要翻译： 衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。 壳体包括侧壁和位于侧壁上方的圆顶。 圆顶具有物理分离和不连续的部分。 气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。 高密度等离子体产生系统与处理室可操作地耦合。 衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。 控制器控制气体输送系统和高密度等离子体发生系统。

    Two-piece dome with separate RF coils for inductively coupled plasma reactors
    9.
    发明申请
    Two-piece dome with separate RF coils for inductively coupled plasma reactors 失效
    具有用于电感耦合等离子体反应器的单独RF线圈的两片式圆顶

    公开(公告)号：US20070037397A1

    公开(公告)日：2007-02-15

    申请号：US11202043

    申请日：2005-08-11

    申请人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert Chen ,  Jason Bloking ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh

    发明人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert Chen ,  Jason Bloking ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh

    IPC分类号： H01L21/302

    CPC分类号： H01J37/3244 ,  H01J37/321 ,  H01J37/32431 ,  H01J37/32458

    摘要： A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

    摘要翻译： 衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。 壳体包括侧壁和位于侧壁上方的圆顶。 圆顶具有物理分离和不连续的部分。 气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。 高密度等离子体产生系统与处理室可操作地耦合。 衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。 控制器控制气体输送系统和高密度等离子体发生系统。

    Inductive plasma system with sidewall magnet
    10.
    发明申请
    Inductive plasma system with sidewall magnet 审中-公开
    具有侧壁磁铁的感应等离子体系统

    公开(公告)号：US20060177600A1

    公开(公告)日：2006-08-10

    申请号：US11053363

    申请日：2005-02-08

    申请人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Jason Bloking ,  Ellie Yieh

    发明人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Jason Bloking ,  Ellie Yieh

    IPC分类号： H05H1/02 ,  C23C16/00 ,  H05H1/46

    CPC分类号： H01J37/32688 ,  H01J37/321

    摘要： A substrate processing system has a housing that defines a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate within a substrate plane during substrate processing. A gas-delivery system is configured to introduce a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber. A magnetic confinement ring with magnetic dipoles is disposed circumferentially around a symmetry axis orthogonal to the substrate plane and provides a magnetic field with a net dipole moment substantially nonparallel with the substrate plane. A controller controls the gas-delivery system, the pressure-control system, and the high-density plasma system.

    摘要翻译： 衬底处理系统具有限定处理室的壳体。 衬底保持器设置在处理室内并且构造成在衬底处理期间将衬底支撑在衬底平面内。 气体输送系统构造成将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体产生系统与处理室可操作地耦合。 具有磁偶极子的磁约束环周围围绕与基板平面正交的对称轴设置，并提供具有与基板平面基本上不平行的净偶极矩的磁场。 控制器控制气体输送系统，压力控制系统和高密度等离子体系统。