公开(公告)号：US4800182A

公开(公告)日：1989-01-24

申请号：US4476

申请日：1987-01-20

申请人： Kansei Izaki ,  Takamasa Kawakami ,  Kouichi Hakkei ,  Kazuhiro Ando

发明人： Kansei Izaki ,  Takamasa Kawakami ,  Kouichi Hakkei ,  Kazuhiro Ando

IPC分类号： C01B21/068 ,  C01B31/36 ,  C04B35/589 ,  C04B35/593 ,  C04B35/56 ,  C04B35/58

CPC分类号： C04B35/589 ,  C01B21/068 ,  C01B31/36 ,  C04B35/593 ,  C04B35/5935 ,  C01P2002/02 ,  C01P2004/03 ,  C01P2004/32 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/10 ,  C01P2006/80 ,  C01P2006/90

摘要： The invention relates to a sintered silicon nitride-silicon carbide composite material excellent in toughness and strength and to a process for producing the same. The present sintered composite material is substantially formed of silicon nitride predominantly in .beta.-phase and about 5 to 35% by weight of silicon carbide predominantly in .beta.-phase, which is characterized by the microstructure such that the silicon nitride is in the form of fine grains comprising elongated grains, 0.2 to 1.0 .mu.m in length of minor axis and 1 to 10 .mu.m in length of major axis, and equiaxed grains, 1 .mu.m or below in average size, and the silicon carbide is in the form of equiaxed grains, 1 .mu.m or below in average size, said silicon carbide grains being uniformly dispersed. Having a three-point flexural strength of at least 95 kg/mm.sup.2 and a fracture toughness (K.sub.IC) of at least 54 MN/m.sup.3/2, the present sintered material is excellent in toughness and strength. The process for producing such a material is disclosed in detail.

公开(公告)号：US4613490A

公开(公告)日：1986-09-23

申请号：US729751

申请日：1985-05-02

申请人： Takashi Suzuki ,  Takamasa Kawakami ,  Rieko Nakano ,  Takeshi Koyama ,  Kansei Izaki ,  Akira Mori ,  Masami Orisaku

发明人： Takashi Suzuki ,  Takamasa Kawakami ,  Rieko Nakano ,  Takeshi Koyama ,  Kansei Izaki ,  Akira Mori ,  Masami Orisaku

IPC分类号： C01B21/068 ,  C01B31/36 ,  C04B35/565 ,  C04B35/589 ,  C01B33/06

CPC分类号： C01B21/068 ,  C01B31/36 ,  C04B35/565 ,  C04B35/589 ,  C01P2004/32 ,  C01P2004/52 ,  C01P2004/62 ,  C01P2006/80

摘要： Fine silicon nitride powders, fine silicon carbide powders, or fine powdery mixture of silicon nitride and silicon carbide are prepared by vapor phase reaction of an aminosilane compound, a cyanosilane compound, a silazane compound, an alkoxysilane compound or a siloxane compound and heat treatment of the resulting fine powders in a non-oxidizing gas atmosphere.

摘要翻译： 通过氨基硅烷化合物，氰硅烷化合物，硅氮烷化合物，烷氧基硅烷化合物或硅氧烷化合物的气相反应制备微细的氮化硅粉末，细碳化硅粉末或氮化硅和碳化硅的细粉状混合物， 得到的细粉末在非氧化性气体气氛中。

公开(公告)号：US4594330A

公开(公告)日：1986-06-10

申请号：US712036

申请日：1985-03-15

申请人： Takashi Suzuki ,  Takamasa Kawakami ,  Takeshi Koyama ,  Masami Orisaku ,  Kansei Izaki ,  Rieko Nakano ,  Akira Mori

发明人： Takashi Suzuki ,  Takamasa Kawakami ,  Takeshi Koyama ,  Masami Orisaku ,  Kansei Izaki ,  Rieko Nakano ,  Akira Mori

IPC分类号： C01B21/068 ,  C01B21/087 ,  C01B31/36 ,  C04B35/565 ,  C04B35/589 ,  C04B35/52

CPC分类号： C01B31/36 ,  C01B21/068 ,  C01B21/087 ,  C04B35/565 ,  C04B35/589 ,  C01P2002/02 ,  C01P2002/72 ,  C01P2002/82 ,  C01P2004/03 ,  C01P2004/61 ,  C01P2006/80

摘要： Fine spherical amorphous powder represented by the general formula:SiCxNyHzwherein 0.1

摘要翻译： 通过气相氧化基本上不含卤素原子和氧原子的有机硅化合物制备由通式：SiC x N y H y表示的细球状无定形粉末，其中0.1

公开(公告)号：US5244621A

公开(公告)日：1993-09-14

申请号：US865683

申请日：1992-04-08

申请人： Fumihiro Wakai ,  Yasuharu Kodama ,  Kansei Izaki ,  Takamasa Kawakami

发明人： Fumihiro Wakai ,  Yasuharu Kodama ,  Kansei Izaki ,  Takamasa Kawakami

IPC分类号： C04B35/593 ,  C04B35/645 ,  C04B41/00 ,  C04B41/80

CPC分类号： C04B35/5935 ,  C04B35/645 ,  C04B41/0072 ,  C04B41/80

摘要： There are disclosed in process for shaping ceramic composites which comprises shaping a sintered silicon nitride-silicon carbide composite material having a microstructure formed predominantly of equiaxed grains with an average grain size of 2 .mu.m or below and a silicon carbide content of 10-50% by volume, obtained by liquid-phase sintering, at least 40% by volume of the silicon nitride in the material being in the .beta.-phase, by superplastically deforming said material at a strain rate of 10.sup.-6 sec.sup.-1 to 10.sup.-1 sec.sup.-1 under application of tensile stress or compressive stress in a superplastic temperature region of 1400.degree.-1700.degree. C., and a process for shaping ceramic composites which comprises shaping said sintered composite material by superplastic deformation as described above and then heat-treating the shaped article obtained in a non-oxidizing atmosphere under normal or applied pressure at 1000.degree.-2300.degree. C.

摘要翻译： 在制造陶瓷复合材料的方法中公开了包括使具有主要由等轴晶粒组成的微结构的氮化硅 - 碳化硅复合材料成型，其平均晶粒尺寸为2μm或更小，碳化硅含量为10-50％ 通过液相烧结获得的材料中，至少40体积％的材料中的氮化硅在β相中，通过使所述材料以10-6sec-1至10-1sec -1的应变速率进行超塑性变形， 1在1400°-1700℃的超塑性温度区域中施加拉伸应力或压应力，以及一种用于成形陶瓷复合材料的方法，其包括如上所述通过超塑性变形使所述烧结复合材料成形，然后热处理成形 在正常或施加压力下在1000-2200℃下在非氧化性气氛中得到的制品。

公开(公告)号：US5134097A

公开(公告)日：1992-07-28

申请号：US787129

申请日：1991-11-04

申请人： Koichi Niihara ,  Kansei Izaki ,  Takamasa Kawakami

发明人： Koichi Niihara ,  Kansei Izaki ,  Takamasa Kawakami

IPC分类号： C04B35/584 ,  C04B35/593

CPC分类号： C04B35/593

摘要： A sintered silicon nitride-silicon carbide composite material is provided comprising a matrix phase of silicon nitride and silicon carbide where silicon carbide grains having an average diameter of not more than 1 .mu.m are present at grain boundaries of silicon nitride grains and silicon carbide grains having a diameter of several nanometers to several hundred nanometers, typically not more than about 0.5 micrometers, are dispersed within the silicon nitride grains and a dispersion phase where (a) silicon carbide grains having an average diameter of 2 to 50 .mu.m and/or (b) silicon carbide whiskers having a short axis of 0.05 to 10 .mu.m and an aspect ratio of 5 to 300 are dispersed in the matrix phase. A process for the production of the composite material is also provided.

摘要翻译： 提供了一种烧结氮化硅 - 碳化硅复合材料，其包括氮化硅和碳化硅的基体相，其中平均直径不大于1μm的碳化硅晶粒存在于氮化硅晶粒和碳化硅晶粒的晶界处， 几纳米至几百纳米，通常不超过约0.5微米的直径分散在氮化硅晶粒和分散相中，其中（a）平均直径为2至50微米的碳化硅颗粒和/或（ b）短轴为0.05〜10μm，纵横比为5〜300的碳化硅晶须分散在基体相中。 还提供了生产复合材料的方法。