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公开(公告)号：US5260037A
公开(公告)日：1993-11-09
申请号：US903950
申请日：1992-06-26
申请人： Kiichiro Kitaura , Makoto Ito , Kaoru Kuramochi
发明人： Kiichiro Kitaura , Makoto Ito , Kaoru Kuramochi
CPC分类号： C30B29/06 , C30B15/14 , C30B15/305 , Y10S117/90 , Y10S117/917 , Y10T117/1068
摘要： An apparatus and a method for producing a silicon single crystal by Czochralski method, whereby the silicon single crystal is pulled up from a crucible while the crucible is heated by a side heater in the lateral periphery of the crucible and a bottom heater facing the bottom of the crucible. The outputs of the side heater and bottom heater are controlled independently each other so that an oxygen concentration in the pull-up direction of the pulled-up silicon single crystal is rendered uniform. In addition to the output control of the heaters, a magnetic field is applied to a molten liquid in the crucible, so that, a dopant concentration in a radial direction of the pulled-up silicon single crystal is rendered uniform.
摘要翻译： 一种通过Czochralski法制造单晶硅的装置和方法，其中，通过在坩埚的外周边的侧面加热器将坩埚加热坩埚时，将硅单晶从坩埚中拉出，并且将底部加热器面向底部加热器 坩埚。 侧加热器和底部加热器的输出彼此独立地控制，使得上拉硅单晶的上拉方向上的氧浓度均匀。 除了加热器的输出控制之外，对坩埚中的熔融液体施加磁场，使得上拉硅单晶的半径方向的掺杂剂浓度变得均匀。
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公开(公告)号：US5471949A
公开(公告)日：1995-12-05
申请号：US330785
申请日：1994-10-28
申请人： Kaoru Kuramochi , Makoto Ito , Kiichiro Kitaura
发明人： Kaoru Kuramochi , Makoto Ito , Kiichiro Kitaura
IPC分类号： C30B15/22 , C30B15/00 , C30B15/12 , H01L21/208 , C30B35/00
CPC分类号： C30B29/06 , C30B15/12 , Y10T117/1032 , Y10T117/1052
摘要： A method of producing a silicon single crystal, in which a cylindrical partition is immersed in a molten pure silicon liquid or molten silicon liquid containing a Sb dopant within a crucible and the molten liquid inside the partition is pulled up from the crucible to produce the silicon single crystal, wherein an interval between a lower end of the partition and a crucible bottom is changed to control an oxygen concentration in the pulling-up silicon single crystal. The interval is reduced in the case where the oxygen concentration in the pulling-up silicon single crystal is to be increased while the interval is increased in the case where the oxygen concentration is to be reduced.
摘要翻译： 一种制造硅单晶的方法，其中将圆柱形分隔件浸入熔融的纯硅液体或坩埚内含有Sb掺杂剂的熔融硅液体，并且将分隔壁内的熔融液体从坩埚中拉出以产生硅 单晶，其中改变分隔件的下端和坩埚底部之间的间隔，以控制提拉硅单晶中的氧浓度。 在氧浓度降低的情况下，在提高硅单晶中的氧浓度增加的同时间隔增加的情况下，间隔减小。
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公开(公告)号：US5392729A
公开(公告)日：1995-02-28
申请号：US588171
申请日：1990-09-26
申请人： Kaoru Kuramochi , Makoto Ito , Kiichiro Kitaura
发明人： Kaoru Kuramochi , Makoto Ito , Kiichiro Kitaura
IPC分类号： C30B15/22 , C30B15/00 , C30B15/12 , H01L21/208 , C30B15/30
CPC分类号： C30B29/06 , C30B15/12 , Y10T117/1032 , Y10T117/1052
摘要： A method of producing a silicon single crystal, in which a cylindrical partition is immersed in a molten pure silicon liquid or molten silicon liquid containing a Sb dopant within a crucible and the molten liquid inside the partition is pulled up from the crucible to produce the silicon single crystal, wherein an interval between a lower end of the partition and a crucible bottom is changed to control an oxygen concentration in the pulling-up silicon single crystal. The interval is reduced in the case where the oxygen concentration in the pulling-up silicon single crystal is to be increased while the interval is increased in the case where the oxygen concentration is to be reduced.
摘要翻译： 一种制造硅单晶的方法，其中将圆柱形分隔件浸入熔融的纯硅液体或坩埚内含有Sb掺杂剂的熔融硅液体，并且将分隔壁内的熔融液体从坩埚中拉出以产生硅 单晶，其中改变分隔件的下端和坩埚底部之间的间隔，以控制提拉硅单晶中的氧浓度。 在氧浓度降低的情况下，在提高硅单晶中的氧浓度增加的同时间隔增加的情况下，间隔减小。
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公开(公告)号：US5152867A
公开(公告)日：1992-10-06
申请号：US554552
申请日：1990-07-19
申请人： Kiichiro Kitaura , Makoto Ito , Kaoru Kuramochi
发明人： Kiichiro Kitaura , Makoto Ito , Kaoru Kuramochi
CPC分类号： C30B29/06 , C30B15/14 , C30B15/305 , Y10T117/1068
摘要： An apparatus and a method for producing a silicon single crystal by the Czochralski method, whereby the silicon single crystal is pulled up from a crucible while the crucible is heated by a side heater in the lateral periphery of the crucible and a bottom heater facing the bottom of the crucible. The outputs of the side heater and bottom heater are controlled independently of each other so that an oxygen concentration in the pull-up direction of the pulled-up silicon single crystal is rendered uniform. In addition to the output control of the heaters, a magnetic field is applied to a molten liquid in the crucible, so that, a dopant concentration in a radial direction of the pulled-up silicon single crystal is rendered uniform.
摘要翻译： 一种通过切克劳斯基法（Czochralski method）制造单晶硅的装置和方法，其中，通过在坩埚的外周边的侧面加热器将坩埚加热，并且底部加热器面向底部，从坩埚中拉出硅单晶 的坩埚。 侧加热器和底部加热器的输出彼此独立地控制，使得上拉硅单晶的上拉方向上的氧浓度均匀。 除了加热器的输出控制之外，对坩埚中的熔融液体施加磁场，使得上拉硅单晶的半径方向的掺杂剂浓度变得均匀。
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公开(公告)号：US5611857A
公开(公告)日：1997-03-18
申请号：US474662
申请日：1995-06-07
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： A process and apparatus for producing silicon single crystals with excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the pulled-up silicon single crystal without loss of its rate of pulling. The process of producing silicon single crystals by pulling up the single crystal from a melt of material of the single crystal imposes a certain average temperature gradient on the grown single crystal while it is still at high temperature. The apparatus is provided with a heating element outside a crucible and pulling shaft with which a single crystal is pulled up from the melt of the material in the crucible. The ratio of length h of the heating element to the inside diameter .phi. of the crucible is adjusted so as to be between 0.2 and 0.8 whereby the temperature gradient can be maintained below 2.5.degree. C./mm.
摘要翻译： 通过调节上拉硅单晶的温度梯度而不损失其拉伸速率，制造具有优异的栅极氧化膜介电强度的硅单晶的方法和装置。 通过从单晶的熔体中提取单晶来生产硅单晶的过程在生长的单晶仍处于高温时施加一定的平均温度梯度。 该设备在坩埚外部设置有加热元件和拉动轴，单晶从坩埚中的材料的熔体被拉出。 将加热元件的长度h与坩埚的内径phi的比率调整为0.2〜0.8，由此将温度梯度保持在2.5℃/ mm以下。
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公开(公告)号：US5474019A
公开(公告)日：1995-12-12
申请号：US322197
申请日：1994-10-13
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： A process and apparatus for producing silicon single crystals with excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the pulled-up silicon single crystal without loss of its rate of pulling. The process of producing silicon single crystals by pulling up the single crystal from a melt of material of the single crystal imposes a certain average temperature gradient on the grown single crystal while it is still at high temperature. The apparatus is provided with a heating element outside a crucible and pulling shaft with which a single crystal is pulled up from the melt of the material in the crucible. The ratio of length h of the heating element to the inside diameter .phi. of the crucible is adjusted so as to be between 0.2 and 0.8 whereby the temperature gradient can be maintained below 2.5.degree. C./mm.
摘要翻译： 通过调节上拉硅单晶的温度梯度而不损失其拉伸速率，制造具有优异的栅极氧化膜介电强度的硅单晶的方法和装置。 通过从单晶的熔体中提取单晶来生产硅单晶的过程在生长的单晶仍处于高温时施加一定的平均温度梯度。 该设备在坩埚外部设置有加热元件和拉动轴，单晶从坩埚中的材料的熔体被拉出。 将加热元件的长度h与坩埚的内径phi的比率调整为0.2〜0.8，由此将温度梯度保持在2.5℃/ mm以下。
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公开(公告)号：US09139276B2
公开(公告)日：2015-09-22
申请号：US14368810
申请日：2012-05-09
申请人： Makoto Ito
发明人： Makoto Ito
CPC分类号： B63H20/12 , B63H5/08 , B63H21/21 , B63H21/265 , B63H25/02 , B63H25/42 , B63H2020/003
摘要： A plurality of outboard motors are mounted to a stern of a watercraft and configured to be steered independently. A target steering angle setting section is configured to set a target steering angle for each of the outboard motors. Actuators are configured to steer the outboard motors such that the steering angle of each of the outboard motors is equal or substantially equal to a target steering angle. An actual steering angle detecting section is configured to detect an actual steering angle of each of the outboard motors. A control section is programmed and configured to control the steering operation of the outboard motors such that, when a steering angle difference defining a difference between the actual steering angles of adjacently arranged outboard motors becomes equal to or larger than a prescribed value, an increase of the steering angle difference is prevented.
摘要翻译： 多个舷外马达安装在船舶船尾，并被配置成独立转向。 目标转向角设定部被配置为对每个舷外马达设定目标转向角。 致动器构造成转向舷外马达，使得每个舷外马达的转向角等于或基本上等于目标转向角。 实际的转向角检测部被配置为检测每个舷外马达的实际转向角。 控制部被编程和配置为控制舷外马达的转向操作，使得当定义相邻排列的外侧马达的实际转向角之间的差异的转向角差异等于或大于规定值时，增加 防止转向角差。
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公开(公告)号：US09062315B2
公开(公告)日：2015-06-23
申请号：US13877225
申请日：2011-09-30
申请人： Keishi Sakaguchi , Rie Hamaguchi , Takanori Matsuda , Makoto Ito , Naoki Nagano , Masahiro Hayashi , Daisuke Honda , Yuji Okita , Shinichi Sugimoto
发明人： Keishi Sakaguchi , Rie Hamaguchi , Takanori Matsuda , Makoto Ito , Naoki Nagano , Masahiro Hayashi , Daisuke Honda , Yuji Okita , Shinichi Sugimoto
CPC分类号： C12N15/79 , C12N9/0071 , C12N9/0083 , C12N9/1029 , C12N15/113 , C12N15/52 , C12N15/895 , C12N2310/11 , C12N2310/14 , C12P7/6409 , C12P7/6427 , C12P7/6472 , C12Y114/19001 , C12Y114/19006 , C12Y203/01119
摘要： To provide a transformation method for producing a stramenopile organism having an improved unsaturated fatty acid production capability by disrupting a gene of the stramenopile organism or inhibiting the expression of the gene in a genetically engineering manner. [Solution] A method for transforming a stramenopile organism, which comprises disrupting a gene of the stramenopile organism or inhibiting the expression of the gene in a genetically engineering manner, and which is characterized in that the stramenopile organism is selected from Thraustochytrium aureum, Parietichytrium sarkarianum, Thraustochytrium roseum and Parietichytrium sp. and the gene to be disrupted or of which the expression is to be inhibited is a gene associated with the biosynthesis of a fatty acid.
摘要翻译： 提供通过以遗传工程方式破坏该层状生物体的基因或抑制该基因的表达来生产具有改善的不饱和脂肪酸生产能力的前烧石生物的转化方法。 [解决方案]一种转基因生物的方法，其包括以基因工程方式破坏所述地精生物体的基因或抑制所述基因的表达，其特征在于，所述前列腺生物体选自甲状腺破囊壶菌（Salisochytrium aureum），，鱼（Parietichytrium sarkarianum） ，玫瑰色胸，和Parietichytrium sp。 并且待破坏的基因或其表达被抑制的基因是与脂肪酸的生物合成相关的基因。
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公开(公告)号：US08608242B2
公开(公告)日：2013-12-17
申请号：US13547962
申请日：2012-07-12
申请人： Masayuki Yamada , Hideki Kobayashi , Takeshi Tokai , Masaki Mori , Keisuke Onoda , Makoto Ito
发明人： Masayuki Yamada , Hideki Kobayashi , Takeshi Tokai , Masaki Mori , Keisuke Onoda , Makoto Ito
CPC分类号： B60N2/02 , B60N2/3011 , B60N2/3013 , B60N2/3031 , B60N2/305 , B60N2/3065 , B60N2/309 , B60N2/986
摘要： In a seat, in a state in which tilting of a back main frame around a tilting center is locked by a reclining mechanism, a lower end of a back joint link is turnably joined to a vehicle side. Thus, turning of a first link, a back sub frame and the back joint link is locked, and operation of a back link mechanism is locked. Therefore, a supporting rigidity from rear side of a back side portion can be enhanced by the back link mechanism (the back sub frame), and a crew sitting in the seat can be thoroughly retained.
摘要翻译： 在座椅中，在倾斜中心的背部主框架的倾斜由倾斜机构锁定的状态下，后部接头连杆的下端可转动地接合到车辆侧。 因此，第一连杆，后副车架和后关节链节的转动被锁定，并且后连杆机构的操作被锁定。 因此，通过后连杆机构（后副车架）可以提高从后侧部的后侧的支撑刚性，能够充分地保持坐在座椅中的乘员。
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公开(公告)号：US20130316693A1
公开(公告)日：2013-11-28
申请号：US13979264
申请日：2012-02-06
申请人： Makoto Ito , Kazufumi Yunoki , Takehiro Ida
发明人： Makoto Ito , Kazufumi Yunoki , Takehiro Ida
IPC分类号： H04W8/24
摘要： A mobile station includes a time information reception determining unit configured to determine whether time information is received from a residing network, a table configured to associate networks where the mobile station may reside with time zones for areas where the networks are operated, and a time adjustment unit configured to, in the case where it is not determined by the time information reception determining unit that the time information is received, refer to the table, and perform time adjustment based on the time zone corresponding to the network where the mobile station resides.
摘要翻译： 移动站包括：时间信息接收确定单元，被配置为确定是否从驻留网络接收时间信息;被配置为将移动站可能驻留的网络与用于网络操作的区域的时区相关联的表，以及时间调整 在未被时间信息接收判定单元判断为接收到时间信息的情况下，参照该表，并且基于与移动站所在的网络对应的时区来进行时间调整。
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