公开(公告)号：US08319905B2

公开(公告)日：2012-11-27

申请号：US12353152

申请日：2009-01-13

申请人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

发明人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

IPC分类号： G02F1/1368 ,  H01L29/10

CPC分类号： G02F1/1368 ,  G02F2202/108 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

摘要： Provided are a display substrate and a display device including the same. The display substrate includes: gate wiring; a first semiconductor pattern formed on the gate wiring and having a first energy bandgap; a second semiconductor pattern formed on the first semiconductor pattern and having a second energy bandgap which is greater than the first energy bandgap; data wiring formed on the first semiconductor pattern; and a pixel electrode electrically connected to the data wiring. Because the second energy bandgap is larger than the first energy bandgap, a quantum well is formed in the first semiconductor pattern, enhancing electron mobility therein.

摘要翻译： 提供了一种显示基板和包括该基板的显示装置。 显示基板包括：栅极布线; 形成在所述栅极布线上并具有第一能量带隙的第一半导体图案; 形成在所述第一半导体图案上并具有大于所述第一能带隙的第二能带隙的第二半导体图案; 形成在第一半导体图案上的数据布线; 以及与数据配线电连接的像素电极。 由于第二能量带隙大于第一能带隙，所以在第一半导体图案中形成量子阱，增强其中的电子迁移率。

公开(公告)号：US07847291B2

公开(公告)日：2010-12-07

申请号：US12486328

申请日：2009-06-17

申请人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  O-Sung Seo ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Seong-Hun Kim ,  Yong-Mo Choi

发明人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  O-Sung Seo ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Seong-Hun Kim ,  Yong-Mo Choi

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  H01L27/1225 ,  H01L29/7869

摘要： A display substrate includes; a substrate, a gate electrode arranged on the substrate, a semiconductor pattern arranged on the gate electrode, a source electrode arranged on the semiconductor pattern, a drain electrode arranged on the semiconductor pattern and spaced apart from the source electrode, an insulating layer arranged on, and substantially covering, the source electrode and the drain electrode to cover the source electrode and the drain electrode, a conductive layer pattern arranged on the insulating layer and overlapped aligned with the semiconductor pattern, a pixel electrode electrically connected to the drain electrode, and a storage electrode arranged on the substrate and overlapped overlapping with the pixel electrode, the storage electrode being electrically connected to the conductive layer pattern.

摘要翻译： 显示基板包括： 衬底，布置在衬底上的栅电极，布置在栅电极上的半导体图案，布置在半导体图案上的源电极，布置在半导体图案上并与源电极间隔开的漏电极，布置在 并且基本上覆盖源电极和漏极以覆盖源电极和漏电极，布置在绝缘层上并与半导体图案重叠的导电层图案，与漏电极电连接的像素电极，以及 存储电极，设置在所述基板上，与所述像素电极重叠地重叠，所述存储电极与所述导电层图案电连接。

公开(公告)号：US08035100B2

公开(公告)日：2011-10-11

申请号：US12197573

申请日：2008-08-25

申请人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Byoung-June Kim ,  Czang-Ho Lee ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

发明人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Byoung-June Kim ,  Czang-Ho Lee ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

摘要翻译： 薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层，其中所述金属氧化物具有小于或等于3％的氧缺陷，并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3％的氧缺陷，并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬，钴，镍，铁，锰及其混合物中的至少一种3d过渡金属。

公开(公告)号：US20090152553A1

公开(公告)日：2009-06-18

申请号：US12188956

申请日：2008-08-08

申请人： Kap-Soo YOON ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

发明人： Kap-Soo YOON ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  H01L29/778 ,  H01L29/78687

摘要： A thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, a source electrode, and a drain electrode. The semiconductor pattern includes an active layer being overlapped with the gate electrode and a low band gap portion having a lower energy band gap than the active layer. The source and drain electrodes are spaced apart from each other to be overlapped with the semiconductor pattern. Therefore, the semiconductor pattern includes a low band gap portion having a lower energy band gap than the active layer, so that electron mobility may be increased in a channel formed along the low band gap portion so that electric characteristics of the TFT may be enhanced.

摘要翻译： 薄膜晶体管（TFT）包括栅电极，半导体图案，源电极和漏电极。 半导体图案包括与栅电极重叠的有源层和具有比有源层更低的能带隙的低带隙部分。 源极和漏极彼此间隔开以与半导体图案重叠。 因此，半导体图案包括具有比有源层低的能带隙的低带隙部分，使得沿着低带隙部分形成的沟道中的电子迁移率可能增加，从而可以提高TFT的电特性。

公开(公告)号：US08409916B2

公开(公告)日：2013-04-02

申请号：US13233399

申请日：2011-09-15

申请人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Byoung-June Kim ,  Czang-Ho Lee ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

发明人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Byoung-June Kim ,  Czang-Ho Lee ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

IPC分类号： H01L21/00 ,  H01L21/16

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

摘要翻译： 薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层，其中所述金属氧化物具有小于或等于3％的氧缺陷，并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3％的氧缺陷，并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬，钴，镍，铁，锰及其混合物中的至少一种3d过渡金属。

公开(公告)号：US08189131B2

公开(公告)日：2012-05-29

申请号：US12188956

申请日：2008-08-08

申请人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

发明人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

IPC分类号： G02F1/136

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  H01L29/778 ,  H01L29/78687

摘要： A thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, a source electrode, and a drain electrode. The semiconductor pattern includes an active layer being overlapped with the gate electrode and a low band gap portion having a lower energy band gap than the active layer. The source and drain electrodes are spaced apart from each other to be overlapped with the semiconductor pattern. Therefore, the semiconductor pattern includes a low band gap portion having a lower energy band gap than the active layer, so that electron mobility may be increased in a channel formed along the low band gap portion so that electric characteristics of the TFT may be enhanced.

摘要翻译： 薄膜晶体管（TFT）包括栅电极，半导体图案，源电极和漏电极。 半导体图案包括与栅电极重叠的有源层和具有比有源层更低的能带隙的低带隙部分。 源极和漏极彼此间隔开以与半导体图案重叠。 因此，半导体图案包括具有比有源层低的能带隙的低带隙部分，使得沿着低带隙部分形成的沟道中的电子迁移率可能增加，从而可以提高TFT的电特性。

公开(公告)号：US20090180045A1

公开(公告)日：2009-07-16

申请号：US12353152

申请日：2009-01-13

申请人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

发明人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

IPC分类号： G02F1/1368 ,  H01L27/08 ,  H01L29/02

CPC分类号： G02F1/1368 ,  G02F2202/108 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

摘要： Provided are a display substrate and a display device including the same. The display substrate includes: gate wiring; a first semiconductor pattern formed on the gate wiring and having a first energy bandgap; a second semiconductor pattern formed on the first semiconductor pattern and having a second energy bandgap which is greater than the first energy bandgap; data wiring formed on the first semiconductor pattern; and a pixel electrode electrically connected to the data wiring. Because the second energy bandgap is larger than the first energy bandgap, a quantum well is formed in the first semiconductor pattern, enhancing electron mobility therein.

摘要翻译： 提供了一种显示基板和包括该基板的显示装置。 显示基板包括：栅极布线; 形成在所述栅极布线上并具有第一能量带隙的第一半导体图案; 形成在所述第一半导体图案上并具有大于所述第一能带隙的第二能带隙的第二半导体图案; 形成在第一半导体图案上的数据布线; 以及与数据配线电连接的像素电极。 由于第二能量带隙大于第一能带隙，所以在第一半导体图案中形成量子阱，增强其中的电子迁移率。

公开(公告)号：US20100059745A1

公开(公告)日：2010-03-11

申请号：US12499009

申请日：2009-07-07

申请人： Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

发明人： Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L27/1248 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/7869

摘要： Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.

摘要翻译： 提供了一种薄膜晶体管（TFT）显示面板，其具有可以有效制造的改进的电气特性和制造TFT显示面板的方法。 TFT显示面板包括：形成在绝缘基板上的栅极布线; 形成在栅极布线上的氧化物有源层图案; 形成在氧化物有源层图案上以跨过栅极布线的数据布线; 形成在氧化物有源层图案和数据布线上并由氮化硅（SiNx）制成的钝化层; 以及形成在钝化层上的像素电极。

公开(公告)号：US08022411B2

公开(公告)日：2011-09-20

申请号：US12499009

申请日：2009-07-07

申请人： Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

发明人： Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

IPC分类号： H01L51/52

CPC分类号： H01L27/1248 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/7869

摘要： Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.

摘要翻译： 提供了一种薄膜晶体管（TFT）显示面板，其具有可以有效制造的改进的电气特性，以及制造TFT显示面板的方法。 TFT显示面板包括：形成在绝缘基板上的栅极布线; 形成在栅极布线上的氧化物有源层图案; 形成在氧化物有源层图案上以跨过栅极布线的数据布线; 形成在氧化物有源层图案和数据布线上并由氮化硅（SiNx）制成的钝化层; 以及形成在钝化层上的像素电极。

公开(公告)号：US20110133193A1

公开(公告)日：2011-06-09

申请号：US12844356

申请日：2010-07-27

申请人： Jean-Ho SONG ,  Shin-Il Choi ,  Sun-Young Hong ,  Shi-Yul Kim ,  Ki-Yeup Lee ,  Jae-Hyoung Youn ,  Sung-Ryul Kim ,  O-Sung Seo ,  Yang-Ho Bae ,  Jong-Hyun Choung ,  Dong-Ju Yang ,  Bong-Kyun Kim ,  Hwa-Yeul Oh ,  Pil-Soon Hong ,  Byeong-Beom Kim ,  Je-Hyeong Park ,  Yu-Gwang Jeong ,  Jong-In Kim ,  Nam-Seok Suh

发明人： Jean-Ho SONG ,  Shin-Il Choi ,  Sun-Young Hong ,  Shi-Yul Kim ,  Ki-Yeup Lee ,  Jae-Hyoung Youn ,  Sung-Ryul Kim ,  O-Sung Seo ,  Yang-Ho Bae ,  Jong-Hyun Choung ,  Dong-Ju Yang ,  Bong-Kyun Kim ,  Hwa-Yeul Oh ,  Pil-Soon Hong ,  Byeong-Beom Kim ,  Je-Hyeong Park ,  Yu-Gwang Jeong ,  Jong-In Kim ,  Nam-Seok Suh

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L27/124 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/42368 ,  H01L29/458 ,  H01L29/78669

摘要： A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.

摘要翻译： 薄膜晶体管阵列面板包括栅极线，覆盖栅极线的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线和漏极，钝化层 覆盖数据线和漏电极，并且具有露出漏电极的一部分的接触孔，以及通过接触孔与漏电极电连接的像素电极。 数据线和漏极各自具有包括钛的下层和铜的上层的双层，下层比上层宽，下层具有暴露的区域。 栅极绝缘层可以具有台阶形状。