Substrate processing apparatus and substrate processing method which performs predetermined processing on a substrate which is positioned approximately horizontally at a substrate processing position
    1.
    发明授权
    Substrate processing apparatus and substrate processing method which performs predetermined processing on a substrate which is positioned approximately horizontally at a substrate processing position 有权
    基板处理装置和基板处理方法,其对大致水平放置在基板处理位置的基板进行规定的处理

    公开(公告)号:US07503978B2

    公开(公告)日:2009-03-17

    申请号:US11132565

    申请日:2005-05-19

    IPC分类号: B05C13/02

    摘要: As a substrate transportation robot transports an unprocessed substrate W to a substrate transfer position P1, inert gas ejected from a substrate floating head 71 toward the bottom surface of the substrate W floats up the unprocessed substrate W. Driven by an actuator 74, the substrate floating head 71 floating up the unprocessed substrate W then moves down. Upon arrival of the unprocessed substrate W at a substrate processing position P3, a bottom rim portion of the substrate W engages with support pins 3, and as the substrate floating head 71 further moves down, the unprocessed substrate W is transferred to and mounted on the support pins 3. The substrate W is thus positioned at the substrate processing position P3, whereby the bottom rim portion of the substrate W and an opposing surface 5b of a spin base 5 are positioned close to each other and opposed against each other.

    摘要翻译: 作为基板输送机械手将未处理的基板W输送到基板转印位置P1,从基板浮动头71朝向基板W的底面喷出的惰性气体浮起未经处理的基板W.由致动器74驱动,基板浮动 头部71浮起未处理的基底W然后向下移动。 在未处理的基板W到达基板处理位置P3时,基板W的底部边缘部分与支撑销3接合,并且当基板浮动头71进一步向下移动时,未处理的基板W被转移并安装在 支撑销3.因此,基板W位于基板处理位置P3,由此基板W的底边缘部分和旋转基座5的相对表面5b彼此靠近并且彼此相对。

    Substrate processing apparatus, substrate processing method, substrate position correcting apparatus, and substrate position correcting method
    2.
    发明申请
    Substrate processing apparatus, substrate processing method, substrate position correcting apparatus, and substrate position correcting method 失效
    基板处理装置,基板处理方法,基板位置校正装置和基板位置校正方法

    公开(公告)号:US20060102289A1

    公开(公告)日:2006-05-18

    申请号:US11270338

    申请日:2005-10-28

    IPC分类号: C23F1/00 H01L21/306

    摘要: A substrate W rotates about the center of rotations A0 of a spin base 3, while supported by plural support pins 5 in such a manner that the substrate W can freely slide and while held owing to the force of friction which develops between the bottom surface of the substrate W and the support pins 5. After a detection sensor 74 detects, while the substrate W rotates, an edge surface position (eccentric position) of the edge surface of the substrate which is the farthest from the center of rotations A0, a press block 71 pushes this edge surface position to a preset position P1 which is away along the horizontal direction from the center of rotations A0 by a distance which is determined in accordance with the radius of the substrate W. This aligns the eccentric position to the preset position P1 and positions the center W0 of the substrate within a predetermined range from the center of rotations A0.

    摘要翻译: 基板W围绕旋转基座3的旋转中心A 0旋转,同时由多个支撑销5支撑,使得基板W能够自由滑动并且由于摩擦力在底面 的基板W和支撑销5。 在检测传感器74检测到基板W旋转之后,离开旋转中心A 0的基板的边缘表面的边缘表面位置(偏心位置)时,压块71将该边缘表面位置推到 预设位置P 1,其从旋转中心A 0沿水平方向离开根据基板W的半径确定的距离。将偏心位置对准预设位置P 1并将中心位置 W 0从旋转中心A 0的预定范围内。

    Substrate processing apparatus and substrate processing method which performs predetermined processing on a substrate which is positioned approximately horizontally at a substrate processing position
    3.
    发明申请
    Substrate processing apparatus and substrate processing method which performs predetermined processing on a substrate which is positioned approximately horizontally at a substrate processing position 有权
    基板处理装置和基板处理方法,其对大致水平放置在基板处理位置的基板进行规定的处理

    公开(公告)号:US20050284369A1

    公开(公告)日:2005-12-29

    申请号:US11132565

    申请日:2005-05-19

    摘要: As a substrate transportation robot transports an unprocessed substrate W to a substrate transfer position P1, inert gas ejected from a substrate floating head 71 toward the bottom surface of the substrate W floats up the unprocessed substrate W. Driven by an actuator 74, the substrate floating head 71 floating up the unprocessed substrate W then moves down. Upon arrival of the unprocessed substrate W at a substrate processing position P3, a bottom rim portion of the substrate W engages with support pins 3, and as the substrate floating head 71 further moves down, the unprocessed substrate W is transferred to and mounted on the support pins 3. The substrate W is thus positioned at the substrate processing position P3, whereby the bottom rim portion of the substrate W and an opposing surface 5b of a spin base 5 are positioned close to each other and opposed against each other.

    摘要翻译: 作为基板搬运机器人,将未处理的基板W搬送到基板搬送位置P1,从基板浮动头71朝向基板W的底面喷出的惰性气体浮起未经处理的基板W.由致动器74驱动基板 漂浮在未处理衬底W上的浮动头71向下移动。 在未处理的基板W到达基板处理位置P 3时,基板W的底部边缘部分与支撑销3接合,并且当基板浮动头71进一步向下移动时,未处理的基板W被转移并安装在 支撑销3.因此基板W位于基板处理位置P 3处,由此基板W的底边缘部分和旋转基座5的相对表面5b彼此靠近并相互对置 。

    Substrate position correcting method and apparatus using either substrate radius or center of rotation correction adjustment sum
    4.
    发明授权
    Substrate position correcting method and apparatus using either substrate radius or center of rotation correction adjustment sum 失效
    基板位置校正方法和使用基板半径或旋转中心校正调整和的装置

    公开(公告)号:US07547181B2

    公开(公告)日:2009-06-16

    申请号:US11270338

    申请日:2005-10-28

    摘要: A substrate W rotates about the center of rotations A0 of a spin base 3, while supported by plural support pins 5 in such a manner that the substrate W can freely slide and while held owing to the force of friction which develops between the bottom surface of the substrate W and the support pins 5. After a detection sensor 74 detects, while the substrate W rotates, an edge surface position (eccentric position) of the edge surface of the substrate which is the farthest from the center of rotations A0, a press block 71 pushes this edge surface position to a preset position P1 which is away along the horizontal direction from the center of rotations A0 by a distance which is determined in accordance with the radius of the substrate W. This aligns the eccentric position to the preset position P1 and positions the center W0 of the substrate within a predetermined range from the center of rotations A0.

    摘要翻译: 衬底W围绕旋转基座3的旋转中心A0旋转,同时由多个支撑销5支撑,使得衬底W可以自由地滑动并且由于摩擦力而保持,该摩擦力在 基板W和支撑销5.检测传感器74检测到基板W旋转时,离开旋转中心A0的基板的边缘表面的边缘表面位置(偏心位置),压力 块71将该边缘表面位置推压到从旋转中心A0沿着水平方向离开根据基板W的半径确定的距离的预设位置P1。将偏心位置对准预设位置 P1,并将基板的中心W0定位在从旋转中心A0的预定范围内。

    Substrate processing apparatus and a substrate processing method
    5.
    发明授权
    Substrate processing apparatus and a substrate processing method 有权
    基板处理装置和基板处理方法

    公开(公告)号:US08075731B2

    公开(公告)日:2011-12-13

    申请号:US12259567

    申请日:2008-10-28

    申请人: Katsuhiko Miya

    发明人: Katsuhiko Miya

    IPC分类号: C23C16/00 H01L21/304

    CPC分类号: H01L21/67051

    摘要: A gas injection head 200 is provided above a substantial center of a substrate W. Nitrogen gas introduced from a gas feed port 291 is injected from a slit-shaped injection port 293 via an internal buffer space BF. In this way, a radial gas flow substantially isotropic in a horizontal direction while having an injection direction restricted in a vertical direction is generated above the substrate. Thus, dust D, mist M and the like around the substrate are blown off in outward directions and do not adhere to the substrate W. The gas injection head 200 can be made smaller than the diameter of the substrate W and needs to be neither retracted from the substrate surface nor rotated, wherefore an apparatus can be miniaturized.

    摘要翻译: 气体注入头200设置在基板W的大致中心的上方。从气体供给口291引入的氮气经由内部缓冲空间BF从狭缝状喷射口293喷射。 以这种方式,在衬底上方产生沿垂直方向限制的注入方向在水平方向上基本上各向同性的径向气流。 因此,基板周围的灰尘D,雾M等被向外吹出而不粘附到基板W.气体注入头200可以被制成小于基板W的直径,并且不需要缩回 从基板表面也不旋转,因此可以使装置小型化。

    Substrate processing apparatus and substrate processing method
    6.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号:US07964042B2

    公开(公告)日:2011-06-21

    申请号:US12179154

    申请日:2008-07-24

    IPC分类号: B08B3/04

    CPC分类号: H01L21/67028 H01L21/67034

    摘要: After the rinsing processing is completed, the rotation speed of the substrate is reduced from 600 rpm to 10 rpm to form a puddle-like DIW liquid film. After the supply of DIW is stopped, the control unit waits for a predetermined time (0.5 seconds) so that the film thickness t1 of the puddle-like liquid film becomes approximately uniform. Then, IPA is discharged to a central part of the surface of the substrate at a flow rate of 100 (mL/min) for instance. By the supply of IPA, DIW is replaced with IPA at the central part of the surface of the substrate to form a replaced region. Further, after three seconds of IPA supply, the rotation speed of the substrate is accelerated from 10 rpm to 300 rpm. This causes the replaced region to expand in a radial direction of the substrate so that the entire surface of the substrate is replaced with the low surface-tension solvent.

    摘要翻译: 冲洗处理结束后,基板的转速从600rpm降低到10rpm,形成水溶性DIW液膜。 在DIW的供给停止之后,控制单元等待预定时间(0.5秒),使得水坑状液膜的膜厚度t1变得大致均匀。 然后,以100(mL / min)的流量将IPA排出到基板表面的中心部分。 通过IPA的供应,DIW在基材表面的中心部分被IPA代替,以形成替代区域。 此外,在三秒的IPA供应之后,基板的转速从10rpm加速到300rpm。 这使得更换的区域在基板的径向方向上膨胀,使得基板的整个表面被低表面张力溶剂替代。

    Substrate processing apparatus and substrate processing method
    7.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号:US07942976B2

    公开(公告)日:2011-05-17

    申请号:US11866457

    申请日:2007-10-03

    IPC分类号: H01L21/304 B08B3/00

    摘要: A rinsing liquid supplier includes a temperature adjuster. The temperature adjuster cools DIW to a temperature lower than room temperature. This temperature adjuster cools down DIW to a temperature not more than 10 degrees centigrade for instance, and cooling down to an even lower temperature of 5 degrees centigrade or below is more preferable. Meanwhile, the temperature adjuster maintains DIW at not less than 0 degrees centigrade, which prevents freezing of the DIW. The cooled DIW supplied to a rinsing liquid pipe is discharged from the rinsing liquid discharge nozzle toward the top surface of the substrate, to thereby form a liquid film. Further, the cooled DIW is discharged toward the rear surface of the substrate from the liquid discharge nozzle via the liquid supply pipe, to thereby form the liquid film on the rear surface. Since the liquid films are already cooled, they are frozen in a short time when the cooling gas is discharged toward the top surface and the rear surface of the substrate.

    摘要翻译: 冲洗液供应商包括温度调节器。 温度调节器将DIW冷却至低于室温的温度。 该温度调节器例如将DIW冷却至不高于10摄氏度的温度,并且更优选冷却至更低的5摄氏度或更低的温度。 同时,温度调节器将DIW维持在不低于摄氏0度,防止DIW冻结。 供给到冲洗液管的冷却的DIW从冲洗液体排出喷嘴朝向基板的上表面排出,从而形成液膜。 此外,冷却的DIW经由液体供给管从液体排出喷嘴朝向基板的后表面排出,从而在后表面上形成液膜。 由于液膜已经被冷却,所以当冷却气体朝向基板的顶表面和后表面排出时,它们在短时间内被冷冻。

    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
    8.
    发明申请
    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
    基板加工方法和基板加工装置

    公开(公告)号:US20070141951A1

    公开(公告)日:2007-06-21

    申请号:US11612948

    申请日:2006-12-19

    IPC分类号: B24B51/00

    摘要: A holding mode is selectively switched, in accordance with the content of processing of a substrate, among three holding modes: (a) a first holding mode in which while first support pins F1 through F12 abut on the back surface of a substrate W and support the substrate W, the substrate W is held because of nitrogen gas which is supplied to the front surface of the substrate W; (b) a second holding mode in which while second support pins S1 through S12 abut on the edge surface of the substrate W as the substrate W moves along the horizontal direction, thereby restricting horizontal movement of the substrate W, and abut on the back surface of the substrate W, thereby supporting the substrate W, the substrate W is held because of nitrogen gas which is supplied to the back surface of the substrate W; and (c) a third holding mode in which while the first and the second support pins F1 through F12 and support pins S1 through S12 abut on the back surface of the substrate W, the substrate W is held because of nitrogen gas which is supplied to the front surface of the substrate W.

    摘要翻译: 根据基板的处理内容,在三种保持模式中选择性地切换保持模式:(a)第一保持模式,其中第一支撑销F 1至F 12在衬底W的背面上邻接 并且支撑基板W,由于供给到基板W的前表面的氮气,保持基板W; (b)第二保持模式,其中随着基板W沿着水平方向移动而第二支撑销S1至S12抵接在基板W的边缘表面上,从而限制基板W的水平运动,并且抵靠在基板 基板W的背面,由此支撑基板W,由于供给到基板W的背面的氮气,基板W被保持, 和(c)第三保持模式,其中当第一和第二支撑销F 1至F 12和支撑销S1至S12抵接在基板W的背面上时,基板W由于氮气而被保持 其被提供给基板W的前表面。

    Apparatus for and method of processing a substrate with processing liquid
    9.
    发明申请
    Apparatus for and method of processing a substrate with processing liquid 有权
    用处理液处理基材的设备和方法

    公开(公告)号:US20060021636A1

    公开(公告)日:2006-02-02

    申请号:US11154363

    申请日:2005-06-16

    申请人: Katsuhiko Miya

    发明人: Katsuhiko Miya

    IPC分类号: B08B3/00

    摘要: On the top surface of a substrate, an atmosphere blocker plate, of which plan size is equal or larger than the substrate size, is disposed opposing to the top surface of the substrate. In the rim portion of the atmosphere blocker plate, a vertical through hole is formed so that a nozzle can be inserted into the hole. Nozzle move mechanism moves the nozzle to insert the nozzle to the through hole and position it to the opposing position that is opposed to the top rim portion of the substrate and to the retract position that is away from the atmosphere blocker plate. Processing liquid is supplied from the nozzle, which is positioned to the opposing position, to the top rim portion of the substrate.

    摘要翻译: 在基板的顶面上,平面尺寸等于或大于基板尺寸的气氛阻挡板设置成与基板的顶表面相对。 在大气阻挡板的边缘部分,形成垂直通孔,使得喷嘴能够插入孔中。 喷嘴移动机构移动喷嘴以将喷嘴插入通孔并将其定位到与基板的顶部边缘部分相对的相对位置以及远离大气阻挡板的缩回位置。 处理液体从位于相对位置的喷嘴供给到基板的顶部边缘部分。

    Substrate processing apparatus and substrate processing method
    10.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号:US08109282B2

    公开(公告)日:2012-02-07

    申请号:US11860173

    申请日:2007-09-24

    IPC分类号: B08B3/10

    摘要: A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

    摘要翻译: 从形成在阻挡部件上的冲洗液体排出口排出冲洗液(DIW),在向间隙空间供给氮气的同时,向基板表面进行漂洗处理,并将液体混合物(IPA + DIW)从 形成在所述阻挡构件中的液体混合物排出口,以在将所述氮气供应到所述间隙空间中时,用所述液体混合物代替粘附到所述基板表面的冲洗液。 因此,当用液体混合物代替粘附到基板表面的冲洗液体时,可以抑制液体混合物的溶解氧浓度的增加,这使得可以可靠地防止在基板表面上形成氧化膜或产生水印 。