摘要:
As a substrate transportation robot transports an unprocessed substrate W to a substrate transfer position P1, inert gas ejected from a substrate floating head 71 toward the bottom surface of the substrate W floats up the unprocessed substrate W. Driven by an actuator 74, the substrate floating head 71 floating up the unprocessed substrate W then moves down. Upon arrival of the unprocessed substrate W at a substrate processing position P3, a bottom rim portion of the substrate W engages with support pins 3, and as the substrate floating head 71 further moves down, the unprocessed substrate W is transferred to and mounted on the support pins 3. The substrate W is thus positioned at the substrate processing position P3, whereby the bottom rim portion of the substrate W and an opposing surface 5b of a spin base 5 are positioned close to each other and opposed against each other.
摘要:
A substrate W rotates about the center of rotations A0 of a spin base 3, while supported by plural support pins 5 in such a manner that the substrate W can freely slide and while held owing to the force of friction which develops between the bottom surface of the substrate W and the support pins 5. After a detection sensor 74 detects, while the substrate W rotates, an edge surface position (eccentric position) of the edge surface of the substrate which is the farthest from the center of rotations A0, a press block 71 pushes this edge surface position to a preset position P1 which is away along the horizontal direction from the center of rotations A0 by a distance which is determined in accordance with the radius of the substrate W. This aligns the eccentric position to the preset position P1 and positions the center W0 of the substrate within a predetermined range from the center of rotations A0.
摘要:
As a substrate transportation robot transports an unprocessed substrate W to a substrate transfer position P1, inert gas ejected from a substrate floating head 71 toward the bottom surface of the substrate W floats up the unprocessed substrate W. Driven by an actuator 74, the substrate floating head 71 floating up the unprocessed substrate W then moves down. Upon arrival of the unprocessed substrate W at a substrate processing position P3, a bottom rim portion of the substrate W engages with support pins 3, and as the substrate floating head 71 further moves down, the unprocessed substrate W is transferred to and mounted on the support pins 3. The substrate W is thus positioned at the substrate processing position P3, whereby the bottom rim portion of the substrate W and an opposing surface 5b of a spin base 5 are positioned close to each other and opposed against each other.
摘要:
A substrate W rotates about the center of rotations A0 of a spin base 3, while supported by plural support pins 5 in such a manner that the substrate W can freely slide and while held owing to the force of friction which develops between the bottom surface of the substrate W and the support pins 5. After a detection sensor 74 detects, while the substrate W rotates, an edge surface position (eccentric position) of the edge surface of the substrate which is the farthest from the center of rotations A0, a press block 71 pushes this edge surface position to a preset position P1 which is away along the horizontal direction from the center of rotations A0 by a distance which is determined in accordance with the radius of the substrate W. This aligns the eccentric position to the preset position P1 and positions the center W0 of the substrate within a predetermined range from the center of rotations A0.
摘要:
A gas injection head 200 is provided above a substantial center of a substrate W. Nitrogen gas introduced from a gas feed port 291 is injected from a slit-shaped injection port 293 via an internal buffer space BF. In this way, a radial gas flow substantially isotropic in a horizontal direction while having an injection direction restricted in a vertical direction is generated above the substrate. Thus, dust D, mist M and the like around the substrate are blown off in outward directions and do not adhere to the substrate W. The gas injection head 200 can be made smaller than the diameter of the substrate W and needs to be neither retracted from the substrate surface nor rotated, wherefore an apparatus can be miniaturized.
摘要:
After the rinsing processing is completed, the rotation speed of the substrate is reduced from 600 rpm to 10 rpm to form a puddle-like DIW liquid film. After the supply of DIW is stopped, the control unit waits for a predetermined time (0.5 seconds) so that the film thickness t1 of the puddle-like liquid film becomes approximately uniform. Then, IPA is discharged to a central part of the surface of the substrate at a flow rate of 100 (mL/min) for instance. By the supply of IPA, DIW is replaced with IPA at the central part of the surface of the substrate to form a replaced region. Further, after three seconds of IPA supply, the rotation speed of the substrate is accelerated from 10 rpm to 300 rpm. This causes the replaced region to expand in a radial direction of the substrate so that the entire surface of the substrate is replaced with the low surface-tension solvent.
摘要:
A rinsing liquid supplier includes a temperature adjuster. The temperature adjuster cools DIW to a temperature lower than room temperature. This temperature adjuster cools down DIW to a temperature not more than 10 degrees centigrade for instance, and cooling down to an even lower temperature of 5 degrees centigrade or below is more preferable. Meanwhile, the temperature adjuster maintains DIW at not less than 0 degrees centigrade, which prevents freezing of the DIW. The cooled DIW supplied to a rinsing liquid pipe is discharged from the rinsing liquid discharge nozzle toward the top surface of the substrate, to thereby form a liquid film. Further, the cooled DIW is discharged toward the rear surface of the substrate from the liquid discharge nozzle via the liquid supply pipe, to thereby form the liquid film on the rear surface. Since the liquid films are already cooled, they are frozen in a short time when the cooling gas is discharged toward the top surface and the rear surface of the substrate.
摘要:
A holding mode is selectively switched, in accordance with the content of processing of a substrate, among three holding modes: (a) a first holding mode in which while first support pins F1 through F12 abut on the back surface of a substrate W and support the substrate W, the substrate W is held because of nitrogen gas which is supplied to the front surface of the substrate W; (b) a second holding mode in which while second support pins S1 through S12 abut on the edge surface of the substrate W as the substrate W moves along the horizontal direction, thereby restricting horizontal movement of the substrate W, and abut on the back surface of the substrate W, thereby supporting the substrate W, the substrate W is held because of nitrogen gas which is supplied to the back surface of the substrate W; and (c) a third holding mode in which while the first and the second support pins F1 through F12 and support pins S1 through S12 abut on the back surface of the substrate W, the substrate W is held because of nitrogen gas which is supplied to the front surface of the substrate W.
摘要:
On the top surface of a substrate, an atmosphere blocker plate, of which plan size is equal or larger than the substrate size, is disposed opposing to the top surface of the substrate. In the rim portion of the atmosphere blocker plate, a vertical through hole is formed so that a nozzle can be inserted into the hole. Nozzle move mechanism moves the nozzle to insert the nozzle to the through hole and position it to the opposing position that is opposed to the top rim portion of the substrate and to the retract position that is away from the atmosphere blocker plate. Processing liquid is supplied from the nozzle, which is positioned to the opposing position, to the top rim portion of the substrate.
摘要:
A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.