摘要:
In ceramic sinter consisting of at least one kind selected from a group consisting of silicon nitride, zirconia, silicon carbide, cermet, SIALON, aluminum nitride and alumina, wear resistant member and electronic component member using thereof, skewness at a contact surface of the ceramic sinter is set at −2 or more and 0 or less, a depth of a micro-crack is set at 5 &mgr;m or less, and in the depth of up to 500 &mgr;m from the surface an area that pores occupy does not exceed 5%. The ceramic sinter as described above can suppress wear of the opponent member. Further, in such ceramic sinter, bonding strength with an element or a metal plate can be heightened to enable to suppress peeling. The electronic components of high reliability can be fabricated accordingly. The present wear resistant member is suitable for sliding member that is used in portions where wear is particularly remarkable. The present ceramic sinter is suitable for electronic component member such as substrates, heat sinks or the like that tend to peel.
摘要:
A high thermal conductive silicon nitride structural member of the present invention contains a rare earth element in the range of 1.0 to 7.5 wt. % calculated as oxide thereof and Li, Na, K, Fe, Ca, Mg, Sr, Ba, Mn and B as impurity cationic elements in a total amount not greater than 0.3 wt. %, and has the thermal conductivity not less than 60 W/(m.K), preferably not less than 80 W/(m.K). Also, a high thermal conductive silicon nitride sintered body consists of silicon nitride particles and a grain boundary phase, a crystal compound phase in the grain boundary phase being not less than 20 vol. %, preferably not less than 50 vol. %, with respect to the entire grain boundary phase, and has the thermal conductivity not less than 60 W/(m.K), preferably not less than 80 W/(m.K). A semiconductor package of the present invention comprising a ceramic substrate on which a semiconductor chip is mounted, lead frames joined to the same surface of the ceramic substrate as on which the semiconductor chip is mounted, and bonding wires for electrically connecting the semiconductor chip and the lead frames, wherein the ceramic substrate is formed of the above high thermal conductive silicon nitride sintered body.