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公开(公告)号：US20050082607A1
公开(公告)日：2005-04-21
申请号：US10976855
申请日：2004-11-01
IPC分类号： H01L21/331 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/739 , H01L29/76 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/402 , H01L29/407 , H01L29/4232 , H01L29/4238 , H01L29/456 , H01L29/495 , H01L29/4958 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device of the present invention is provided with a power device which has a semiconductor substrate having a first main surface and a second main surface that are opposed to each other and an insulating gate structure on the first main surface side, wherein a main current flows between the first main surface and the second main surface, that is to say, is provided with an insulating gate type MOS transistor structure wherein the thickness (t1) of the semiconductor substrate is no less than 50 μm and no greater than 250 μm and a low ON voltage and a high withstanding capacity against breakdown are implemented in the first main surface. Thereby, a low ON voltage, the maintaining of the withstanding capacity against breakdown and the reduction of a switching loss on the high voltage side can be implemented.
摘要翻译： 本发明的半导体器件具有电源装置，该功率器件具有：具有彼此相对的第一主表面和第二主表面的半导体衬底，以及在第一主表面侧的绝缘栅极结构，其中主电流 在第一主表面和第二主表面之间流动，即具有绝缘栅型MOS晶体管结构，其中半导体衬底的厚度（t 1> 1）不小于50 在第一主表面上实施了不超过250个妈妈的低导通电压和高耐破坏能力。 因此，可以实现低导通电压，耐击穿能力的保持和高压侧的开关损耗的降低。
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公开(公告)号：US20050062105A1
公开(公告)日：2005-03-24
申请号：US10976931
申请日：2004-11-01
IPC分类号： H01L21/331 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/739 , H01L29/76 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/402 , H01L29/407 , H01L29/4232 , H01L29/4238 , H01L29/456 , H01L29/495 , H01L29/4958 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device of the present invention is provided with a power device which has a semiconductor substrate having a first main surface and a second main surface that are opposed to each other and an insulating gate structure on the first main surface side, wherein a main current flows between the first main surface and the second main surface, that is to say, is provided with an insulating gate type MOS transistor structure wherein the thickness (t1) of the semiconductor substrate is no less than 50 μm and no greater than 250 μm and a low ON voltage and a high withstanding capacity against breakdown are implemented in the first main surface. Thereby, a low ON voltage, the maintaining of the withstanding capacity against breakdown and the reduction of a switching loss on the high voltage side can be implemented.
摘要翻译： 本发明的半导体器件具有电源装置，该功率器件具有：具有彼此相对的第一主表面和第二主表面的半导体衬底，以及在第一主表面侧的绝缘栅极结构，其中主电流 在第一主表面和第二主表面之间流动，即具有绝缘栅型MOS晶体管结构，其中半导体衬底的厚度（t1）不小于50μm且不大于250μm，并且 在第一主表面中实施低导通电压和高耐受击穿能力。 因此，可以实现低导通电压，耐击穿能力的保持和高压侧的开关损耗的降低。
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公开(公告)号：US07560771B2
公开(公告)日：2009-07-14
申请号：US10976931
申请日：2004-11-01
IPC分类号： H01L29/76
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/402 , H01L29/407 , H01L29/4232 , H01L29/4238 , H01L29/456 , H01L29/495 , H01L29/4958 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device of the present invention is provided with a power device which has a semiconductor substrate having a first main surface and a second main surface that are opposed to each other and an insulating gate structure on the first main surface side, wherein a main current flows between the first main surface and the second main surface, that is to say, is provided with an insulating gate type MOS transistor structure wherein the thickness (t1) of the semiconductor substrate is no less than 50 μm and no greater than 250 μm and a low ON voltage and a high withstanding capacity against breakdown are implemented in the first main surface. Thereby, a low ON voltage, the maintaining of the withstanding capacity against breakdown and the reduction of a switching loss on the high voltage side can be implemented.
摘要翻译： 本发明的半导体器件具有电源装置，该功率器件具有：具有彼此相对的第一主表面和第二主表面的半导体衬底，以及在第一主表面侧的绝缘栅极结构，其中主电流 在第一主表面和第二主表面之间流动，即具有绝缘栅型MOS晶体管结构，其中半导体衬底的厚度（t1）不小于50μm且不大于250μm，并且 在第一主表面中实施低导通电压和高耐受击穿能力。 因此，可以实现低导通电压，耐击穿能力的保持和高压侧的开关损耗的降低。
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公开(公告)号：US06815767B2
公开(公告)日：2004-11-09
申请号：US10239782
申请日：2002-09-25
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/402 , H01L29/407 , H01L29/4232 , H01L29/4238 , H01L29/456 , H01L29/495 , H01L29/4958 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device of the present invention is provided with a power device which has a semiconductor substrate having a first main surface and a second main surface that are opposed to each other and an insulating gate structure on the first main surface side, wherein a main current flows between the first main surface and the second main surface, that is to say, is provided with an insulating gate type MOS transistor structure wherein the thickness (t1) of the semiconductor substrate is no less than 50 &mgr;m and no greater than 250 &mgr;m and a low ON voltage and a high withstanding capacity against breakdown are implemented in the first main surface. Thereby, a low ON voltage, the maintaining of the withstanding capacity against breakdown and the reduction of a switching loss on the high voltage side can be implemented.
摘要翻译： 本发明的半导体器件具有电源装置，该功率器件具有：具有彼此相对的第一主表面和第二主表面的半导体衬底，以及在第一主表面侧的绝缘栅极结构，其中主电流 在第一主表面和第二主表面之间流动，即具有绝缘栅型MOS晶体管结构，其中半导体衬底的厚度（t1）不小于50μm且不大于250μm，并且 在第一主表面中实施低导通电压和高耐受击穿能力。 因此，可以实现低导通电压，耐击穿能力的保持和高压侧的开关损耗的降低。
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公开(公告)号：US07250345B2
公开(公告)日：2007-07-31
申请号：US10976855
申请日：2004-11-01
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/402 , H01L29/407 , H01L29/4232 , H01L29/4238 , H01L29/456 , H01L29/495 , H01L29/4958 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device of the present invention is provided with a power device which has a semiconductor substrate having a first main surface and a second main surface that are opposed to each other and an insulating gate structure on the first main surface side, wherein a main current flows between the first main surface and the second main surface, that is to say, is provided with an insulating gate type MOS transistor structure wherein the thickness (t1) of the semiconductor substrate is no less than 50 μm and no greater than 250 μm and a low ON voltage and a high withstanding capacity against breakdown are implemented in the first main surface. Thereby, a low ON voltage, the maintaining of the withstanding capacity against breakdown and the reduction of a switching loss on the high voltage side can be implemented.
摘要翻译： 本发明的半导体器件具有电源装置，该功率器件具有：具有彼此相对的第一主表面和第二主表面的半导体衬底，以及在第一主表面侧的绝缘栅极结构，其中主电流 在第一主表面和第二主表面之间流动，即具有绝缘栅型MOS晶体管结构，其中半导体衬底的厚度（t 1> 1）不小于50 在第一主表面上实施了不超过250个妈妈的低导通电压和高耐破坏能力。 因此，可以实现低导通电压，耐击穿能力的保持和高压侧的开关损耗的降低。
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公开(公告)号：US20050280029A1
公开(公告)日：2005-12-22
申请号：US11204048
申请日：2005-08-16
IPC分类号： H01L29/06 , H01L29/40 , H01L29/417 , H01L29/45 , H01L29/739 , H01L31/0328
CPC分类号： H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/456 , H01L29/7395 , H01L29/7397
摘要： A semiconductor device of the present invention has an insulating gate type field effect transistor portion having an n-type emitter region (3) and an n− silicon substrate (1), which are opposed to each other sandwiching a p-type body region (2), as well as a gate electrode (5a) which is opposed to p-type body region (2) sandwiching a gate insulating film (4a), and also has a stabilizing plate (5b). This stabilizing plate (5b) is made of a conductor or a semiconductor, is opposed to n− silicon substrate (1) sandwiching an insulating film (4, 4b) for a plate, and forms together with n− silicon substrate (1), a capacitor. This stabilizing plate capacitor formed between stabilizing plate (5b) and n− silicon substrate (1) has a capacitance greater than that of the gate-drain capacitor formed between gate electrode (5a) and n− silicon substrate (1).
摘要翻译： 本发明的半导体器件具有绝缘栅型场效应晶体管部分，其具有n型发射极区域（3）和n +硅衬底（1），它们彼此相对夹入 p型体区域（2）以及与栅极绝缘膜（4a）夹持的p型体区域（2）相对的栅电极（5a），还具有稳定板（5） b）。 该稳定板（5b）由导体或半导体制成，与夹在板上的绝缘膜（4,4b）夹在一起的n +硅衬底（1）相对，并形成在一起 与硅衬底（1），电容器。 形成在稳定板（5b）和硅衬底（1）之间的稳定板电容器的电容大于在栅电极（5a）和n < 硅衬底（1）。
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公开(公告)号：US07115944B2
公开(公告)日：2006-10-03
申请号：US11204048
申请日：2005-08-16
IPC分类号： H01L29/76
CPC分类号： H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/456 , H01L29/7395 , H01L29/7397
摘要： A semiconductor device of the present invention has an insulating gate type field effect transistor portion having an n-type emitter region (3) and an n− silicon substrate (1), which are opposed to each other sandwiching a p-type body region (2), as well as a gate electrode (5a) which is opposed to p-type body region (2) sandwiching a gate insulating film (4a), and also has a stabilizing plate (5b). This stabilizing plate (5b) is made of a conductor or a semiconductor, is opposed to n− silicon substrate (1) sandwiching an insulating film (4, 4b) for a plate, and forms together with n− silicon substrate (1), a capacitor. This stabilizing plate capacitor formed between stabilizing plate (5b) and n− silicon substrate (1) has a capacitance greater than that of the gate-drain capacitor formed between gate electrode (5a) and n− silicon substrate (1).
摘要翻译： 本发明的半导体器件具有绝缘栅型场效应晶体管部分，其具有n型发射极区域（3）和n +硅衬底（1），它们彼此相对夹入 p型体区域（2）以及与栅极绝缘膜（4a）夹持的p型体区域（2）相对的栅电极（5a），还具有稳定板（5） b）。 该稳定板（5b）由导体或半导体制成，与夹在板上的绝缘膜（4,4b）夹在一起的n +硅衬底（1）相对，并形成在一起 与硅衬底（1），电容器。 形成在稳定板（5b）和硅衬底（1）之间的稳定板电容器的电容大于在栅电极（5a）和n < 硅衬底（1）。
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公开(公告)号：US06953968B2
公开(公告)日：2005-10-11
申请号：US10221273
申请日：2001-01-19
IPC分类号： H01L29/06 , H01L29/40 , H01L29/417 , H01L29/45 , H01L29/739 , H01L31/0328 , H01L29/76
CPC分类号： H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/456 , H01L29/7395 , H01L29/7397
摘要： A semiconductor device of the present invention has an insulating gate type field effect transistor portion having an n-type emitter region (3) and an n− silicon substrate (1), which are opposed to each other sandwiching a p-type body region (2), as well as a gate electrode (5a) which is opposed to p-type body region (2) sandwiching a gate insulating film (4a), and also has a stabilizing plate (5b). This stabilizing plate (5b) is made of a conductor or a semiconductor, is opposed to n− silicon substrate (1) sandwiching an insulating film (4, 4b) for a plate, and forms together with n− silicon substrate (1), a capacitor. This stabilizing plate capacitor formed between stabilizing plate (5b) and n− silicon substrate (1) has a capacitance greater than that of the gate-drain capacitor formed between gate electrode (5a) and n− silicon substrate (1).
摘要翻译： 本发明的半导体器件具有绝缘栅型场效应晶体管部分，其具有n型发射极区域（3）和n +硅衬底（1），它们彼此相对夹入 p型体区域（2）以及与栅极绝缘膜（4a）夹持的p型体区域（2）相对的栅电极（5a），还具有稳定板（5） b）。 该稳定板（5b）由导体或半导体制成，与夹在板上的绝缘膜（4,4b）夹在一起的n +硅衬底（1）相对，并形成在一起 与硅衬底（1），电容器。 形成在稳定板（5b）和硅衬底（1）之间的稳定板电容器的电容大于在栅电极（5a）和n < 硅衬底（1）。
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公开(公告)号：US11016403B2
公开(公告)日：2021-05-25
申请号：US16742952
申请日：2020-01-15
申请人： Hideki Nakamura , Tadayoshi Uchida , Shuya Sugimoto , Mitsuaki Hirose , Noboru Toriu , Kaori Harada
发明人： Hideki Nakamura , Tadayoshi Uchida , Shuya Sugimoto , Mitsuaki Hirose , Noboru Toriu , Kaori Harada
摘要： An electrophotographic photoconductor is provided that includes a conductive substrate, an undercoat layer overlying the conductive substrate, and a photosensitive layer overlying the undercoat layer. The undercoat layer contains zinc oxide particles and a binder resin and has a volume resistivity of 0.03×106 Ω·cm or less in an electrical field of 5 V/μm at a temperature of 23 degrees C. and a relative humidity of 55%. The photosensitive layer contains a compound represented by the following general formula (1): where each of R1 to R3 independently represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms which may have a substituent, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms.
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公开(公告)号：US09382094B2
公开(公告)日：2016-07-05
申请号：US14007210
申请日：2011-06-06
申请人： Hideki Nakamura , Sachiomi Mizuno
发明人： Hideki Nakamura , Sachiomi Mizuno
CPC分类号： B66B1/24 , B66B11/0045 , B66B11/0075 , B66B11/0206 , B66B11/0476 , B66B11/06 , B66B19/005 , B66B19/007 , Y10T29/49718
摘要： An elevator renovation method, which is capable of reducing a renovation period and enabling effective use of a space when an existing hydraulic elevator is renovated to a non-hydraulic elevator. The elevator renovation method involves renovating a hydraulic elevator in which a plunger provided integrally with a car is hydraulically driven to a non-hydraulic elevator. The elevator renovation method includes; providing a driving device for generating a driving force for raising the car; leaving the plunger so that the plunger can be raised and lowered inside an existing jack; and obtaining the non-hydraulic elevator by exerting the driving force of the driving device in a direction in which the plunger is moved up to raise the car.
摘要翻译： 一种电梯改造方法，其能够在将现有的液压电梯重新装配到非液压电梯时能够减少翻新期间并有效利用空间。 电梯改造方法涉及对液压升降机进行翻新，其中与汽车一体设置的柱塞液压驱动到非液压升降机。 电梯改造方法包括： 提供用于产生用于升高轿厢的驱动力的驱动装置; 离开柱塞，使得柱塞可以在现有的千斤顶内升高和降低; 并且通过沿着柱塞向上移动的方向施加驱动装置的驱动力来获得非液压升降机以升高轿厢。
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