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公开(公告)号：US20080211062A1
公开(公告)日：2008-09-04
申请号：US11681235
申请日：2007-03-02
IPC分类号： H01L29/20 , H01L21/20 , H01L21/283
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (20) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译： 提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。 氮化物半导体器件包括在其上形成半导体元件的n型GaN衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。 在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（20）由除氮化物半导体之外并且包含硅的材料构成。
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2.发明授权Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof 有权具有含硅层的氮化物半导体器件及其制造方法公开(公告)号：US08163576B2
公开(公告)日：2012-04-24
申请号：US12641421
申请日：2009-12-18
IPC分类号： H01L21/00
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译： 提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。 氮化物半导体器件包括形成半导体元件的n型Ga-N衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。 在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（2）由不同于氮化物半导体并且包含硅的材料构成。
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3.发明申请NITRIDE SEMICONDUCTOR DEVICE HAVING A SILICON-CONTAINING LAYER AND MANUFACTURING METHOD THEREOF 有权具有含硅层的氮化物半导体器件及其制造方法公开(公告)号：US20100129991A1
公开(公告)日：2010-05-27
申请号：US12641421
申请日：2009-12-18
IPC分类号： H01L21/20
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译： 提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。 氮化物半导体器件包括形成半导体元件的n型Ga-N衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。 在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（2）由不同于氮化物半导体并且包含硅的材料构成。
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4.发明授权公开(公告)号：US07683398B2
公开(公告)日：2010-03-23
申请号：US11681235
申请日：2007-03-02
IPC分类号： H01L31/072 , H01L29/24 , H01L29/06
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (20) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译： 提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。 氮化物半导体器件包括在其上形成半导体元件的n型GaN衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。 在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（20）由除氮化物半导体之外并且包含硅的材料构成。
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公开(公告)号：US07842962B2
公开(公告)日：2010-11-30
申请号：US11274422
申请日：2005-11-16
IPC分类号： H01L33/00
CPC分类号： H01L21/28575 , H01L33/32 , H01L33/40
摘要： A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.
摘要翻译： P型电极材料设置在P型接触层的顶表面上。 P型电极材料由AuGa膜，Au膜，Pt膜和Au膜形成。 AuGa膜设置在P型接触层上。 Au膜设置在AuGa膜上。 Pt膜设置在Au膜上。 Au膜设置在Pt膜上。 由此，可以获得具有能够降低P型接触层与P型电极之间的接触电阻的P型电极的氮化物半导体器件。
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公开(公告)号：US07378351B2
公开(公告)日：2008-05-27
申请号：US11143685
申请日：2005-06-03
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/28575 , H01L21/30621 , H01L33/0075 , H01S5/32341
摘要： A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.
摘要翻译： 氮化物半导体器件通过在GaN衬底主表面上形成氮化物半导体层形成步骤，抛光由上述氮化物半导体层形成的GaN衬底的背面的步骤，干法蚀刻 通过使用氯和氧的气体混合物进行上述抛光的GaN衬底的背面，以及在经受上述干蚀刻的GaN衬底的背面上形成n型电极的步骤。
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公开(公告)号：US20060108596A1
公开(公告)日：2006-05-25
申请号：US11274422
申请日：2005-11-16
IPC分类号： H01L33/00
CPC分类号： H01L21/28575 , H01L33/32 , H01L33/40
摘要： A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.
摘要翻译： P型电极材料设置在P型接触层的顶表面上。 P型电极材料由AuGa膜，Au膜，Pt膜和Au膜形成。 AuGa膜设置在P型接触层上。 Au膜设置在AuGa膜上。 Pt膜设置在Au膜上。 Au膜设置在Pt膜上。 由此，可以获得具有能够降低P型接触层与P型电极之间的接触电阻的P型电极的氮化物半导体器件。
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公开(公告)号：US20060003490A1
公开(公告)日：2006-01-05
申请号：US11143685
申请日：2005-06-03
CPC分类号： H01L21/28575 , H01L21/30621 , H01L33/0075 , H01S5/32341
摘要： A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.
摘要翻译： 氮化物半导体器件通过在GaN衬底主表面上形成氮化物半导体层形成步骤，抛光由上述氮化物半导体层形成的GaN衬底的背面的步骤，干法蚀刻 通过使用氯和氧的气体混合物进行上述抛光的GaN衬底的背面，以及在经受上述干蚀刻的GaN衬底的背面上形成n型电极的步骤。
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公开(公告)号：US06518635B1
公开(公告)日：2003-02-11
申请号：US09610862
申请日：2000-07-06
申请人： Katsuomi Shiozawa , Toshiyuki Oishi , Yuji Abe , Yasunori Tokuda
发明人： Katsuomi Shiozawa , Toshiyuki Oishi , Yuji Abe , Yasunori Tokuda
IPC分类号： H01L27108
CPC分类号： H01L29/517 , H01L21/26506 , H01L21/26586 , H01L21/28167
摘要： A major object of the present invention is to provide an improved semiconductor device so as to be able to reduce gate electric field concentration at a channel edge, suppress decrease in the threshold during MOSFET operation and reduce the leakage current. A gate insulation film is formed on a semiconductor substrate. A gate electrode is formed on the semiconductor substrate with the gate insulation film therebetween. The dielectric constant of the gate insulation film is not uniform in the surface.
摘要翻译： 本发明的主要目的是提供一种改进的半导体器件，以便能够降低沟道边缘处的栅极电场集中，抑制MOSFET操作期间阈值的降低并减少漏电流。 在半导体衬底上形成栅极绝缘膜。 栅电极形成在半导体衬底上，其间具有栅极绝缘膜。 栅极绝缘膜的介电常数在表面上不均匀。
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10.发明申请公开(公告)号：US20130126906A1
公开(公告)日：2013-05-23
申请号：US13696943
申请日：2011-03-18
申请人： Nobuyuki Tomita , Kenichi Hamano , Masayoshi Tarutani , Yoichiro Mitani , Takeharu Kuroiwa , Masayuki Imaizumi , Hiroaki Sumitani , Kenichi Ohtsuka , Tomoaki Furusho , Takao Sawada , Yuji Abe
发明人： Nobuyuki Tomita , Kenichi Hamano , Masayoshi Tarutani , Yoichiro Mitani , Takeharu Kuroiwa , Masayuki Imaizumi , Hiroaki Sumitani , Kenichi Ohtsuka , Tomoaki Furusho , Takao Sawada , Yuji Abe
CPC分类号： H01L21/02529 , C30B25/02 , C30B25/186 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02587 , H01L21/0262 , H01L21/02661 , H01L21/6719 , H01L21/68771 , H01L29/1608
摘要： A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.
摘要翻译： 提供了一种方法来制造其表面平坦度非常好并且具有非常低的胡萝卜缺陷密度和外延生长后产生的三角形缺陷的碳化硅外延晶片。 碳化硅外延晶片是通过第一步骤，在还原气体气氛中，在第一温度T1处理处理时间t，退火碳化硅本体衬底，其从<0001>面倾斜小于5度;第二步骤 在第一步骤中，在低于退火温度T1的第二温度T2下进行外延生长的第三步骤，同时至少提供包含硅原子的气体和包括碳的气体 原子
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